20.117 Search Results

Contextual Info: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: WJ-RA46/SMRA46 1000 to 4000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 0.8-4.2 GHZ TYP. HIGH GAIN: 25.5 dB (TYP.) HIGH OUTPUT POWER: +19.0 dBm (TYP.) LOW NOISE: 4.5 dB (TYP.) RA46 Outline Drawings

Contextual Info: HY62U8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Insert 70ns Part Jul.25.2000 Final 11 Change the Notch Location of sTSOP

HY62U8200LST

Contextual Info: HY62V8200- I /HY62U8200-(I) Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(I) uses high performance CMOS process technology and

Contextual Info: ISSI IS65C1024AL PRELIMINARY INFORMATION AUGUST 2002 128K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70 ns • Low active power: 50 mW typical • Low standby power: 100 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

TSOPI

Contextual Info: HY62V8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

Contextual Info: HY62U8100B Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8100B is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. The HY62U8100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

HY628100B-LLG55

Abstract: HY628100B HY628100BLLG-55 128kx8bit HY628100BLT1-55
Contextual Info: HY628100B Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed

20117h

Contextual Info: HY62U8100B Series 128K X 8bìt CMOS SRAM DESCRIPTION FEATURES The HY62U8100B is a high speed, low pow er and 1M bit CM OS SRAM organized as 131,072 w ords by 8bit. The HY62U8100B uses high performance C M O S process technology and designed for high speed low pow er circuit technology. It is

marking TACS

Contextual Info: H Y 6 2V 8 20 0B S eries 256K x 8 b it CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

Contextual Info: -H Y U N D A I H Y 6281O 0A DESCRIPTION FEATURES The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed fo r high speed

Contextual Info: 5 5 00 MHz Standard Hybrid Amplifier - Parameters 5 5 00 M Hz bandwidth - Q +25 1 Small signal gain 1 °c MHz 15.0 ± 0.5 dB +0.8/-0.4 dB Max Gain flatness 0.6 1.0 dB M ax p-p Reverse isolation 25 25 dB Min Input 1.5:1 1.5:1 Max Output 1.5:1 1.5:1 Max + 12

Contextual Info: User’s Manual 32 Cover RX111 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

HY628100B-LLG55

Contextual Info: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert

Contextual Info: HY62V8200 Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200 is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200 uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

L0042

Abstract: HY628100ALP
Contextual Info: -HYUNDAI H Y628100A 128K X S e r ie s CMOS SRAM 8 -b it PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

38458

Abstract: WLP0402 A004R RO4003 23136
Contextual Info: VMMK-3413 25 - 45 GHz Directional Detector in SMT Package Data Sheet Description Features The VMMK-3413 is a small and easy-to-use, broadband, directional detector operating in various frequency bands from 25 to 45 GHz with typical insertion loss of 0.8 dB. It is

WLP0402

Contextual Info: VMMK-3413 25 - 45 GHz Directional Detector in SMT Package Data Sheet Description Features The VMMK-3413 is a small and easy-to-use, broadband, directional detector operating in various frequency bands from 25 to 45 GHz with typical insertion loss of 0.8 dB. It is

Contextual Info: HY62V8200 Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP

RW RB 20.117

Abstract: SFERNICE RW K947 RESISTORS JB, HB, KB, LB, MB RB 57 sfernice RWM10X64 230PA7 RP 110 024 RBA-13 SH 250d
Contextual Info: Quick Reference Guide Vishay Sfernice WIREWOUND TECHNOLOGY MOLDED RESISTORS DATA POWER REFERENCES SHEET RATING W Ω 25 °C 1W 0.04 Ω to 2.2 kΩ 2W 0.04 Ω to 4.7 kΩ 2.5 W 0.04 Ω to 13 kΩ NO. MSP 1B 50003 MSP 2B MSP 3B RESISTANCE RANGE TEMPETYPICAL DIMENSIONS

Contextual Info: HY62U8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA => 30mA Jul.29.2000 Final

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

HY62V8100A

Abstract: HY62U8100A
Contextual Info: HY62V8100A- I /HY62U8100A-(I) Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8100A-(I)/HY62U8100A-(I) is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. The HY62V8100A-(I) / HY62U8100A-(I) uses high performance CMOS process technology and

HY628100BLLG-55

Abstract: HY628100B
Contextual Info: HY628100B Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed