CHM2030JGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM2030JGP CURRENT 6 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM2030JGP
CHM2030JGP
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DIODE 83A
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JPT CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM4501JPT
DIODE 83A
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P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
Abstract: transistor DD 127 D
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM2030JPT CURRENT 6 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM2030JPT
P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
transistor DD 127 D
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CHM4501JGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JGP CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM4501JGP
CHM4501JGP
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1n5819 trr
Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
Text: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop
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1N5817
1N5819
SR120
SR180
DO-41
UL94V-0
Plot-101,
1n5819 trr
Khandelwal Herrmann Electronics
202E
SR180
1n5817 trr
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CHM11C2JGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 20 Volts CHM11C2JGP CURRENT 7 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM11C2JGP
CHM11C2JGP
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P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
Abstract: diode 106 16V
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 20 Volts CHM11C2JPT CURRENT 7 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM11C2JPT
P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
diode 106 16V
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Untitled
Abstract: No abstract text available
Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON
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MJ10005
250Vdc,
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CHM21A2PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM21A2PAGP CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM21A2PAGP
O-252)
CIRCU250
CHM21A2PAGP
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Untitled
Abstract: No abstract text available
Text: B120N Series Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-100Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability
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B120N
20-100Volts
OD-323F
OD-323F
ML-STD-750
300us
21-Oct-2011
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B120N
Abstract: B140N B160N
Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability
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B120N/B140N
B160N
20-60Volts
OD-323F
OD-323F
ML-STD-750
OD-323F1
B120N
B140N
B160N
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SOD-323F
Abstract: b120n sod-323f diode B140N B160N
Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability
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B120N/B140N
B160N
20-60Volts
OD-323F
OD-323F
ML-STD-750
SOD-323F
b120n
sod-323f diode
B140N
B160N
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gs 069
Abstract: 20 ampere MOSFET datasheet
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM21A2PAPT CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM21A2PAPT
O-252A
O-252A)
gs 069
20 ampere MOSFET datasheet
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MR1367
Abstract: MR830 IN3889 1N3879-1N3883 1n49331n4937 1N3880 1N3891 1N3892 1N3893 1N4937
Text: ● FAST RECOVERY SILICON RECTIFIERS vRM rep 50 100 ‘RM(wkg)’ 12 I 1 20 * Fi~re 1N3880 - I I.-,NIRQO - I I 30 thru 1N3SS3 11 N3SS9 thru 1N3S93 ‘lN~~99 thru WW3903 ● 200 ‘R(volts) 300 400 ● 600 , I I 11 N3S79 ● lFM(surge)* Ampere Ampere
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1N3880
WW3903
1N3S93
1N4937
45MAX
L17H0
MR1367
MR830
IN3889
1N3879-1N3883
1n49331n4937
1N3880
1N3891
1N3892
1N3893
1N4937
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transorb failure
Abstract: 400 AMP 28 VDC CIRCUIT BREAKER
Text: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.
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270-VDC,
20-ampere
versions--28
deplo1000
Mil-PRF-38534
10-AMP
90XXX-10/M
20-AMP
90XXX-20/M
11779i631-981-2400iFAX
transorb failure
400 AMP 28 VDC CIRCUIT BREAKER
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Untitled
Abstract: No abstract text available
Text: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.
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270-VDC,
20-ampere
Mil-PRF-38534
10-AMP
90XXX-10/M
20-AMP
90XXX-20/M
11779i631-981-2400iFAX
631-981-8888iISO
MIL-38534
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Amp. mosfet 1000 watt
Abstract: transorb diode transorb transorb applications notes MIL-STD-1772 400 AMP 28 VDC CIRCUIT BREAKER sspc 270V 10 amp igbt 1000 volt 200w computer power supply Circuit diagram sspc
Text: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.
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270-VDC,
20-ampere
versions--28
20-AMP
10-AMP
MIL-STD-883,
Mil-Std-1772
Amp. mosfet 1000 watt
transorb diode
transorb
transorb applications notes
400 AMP 28 VDC CIRCUIT BREAKER
sspc 270V
10 amp igbt 1000 volt
200w computer power supply Circuit diagram
sspc
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LL5817
Abstract: LL5818 LL5819 melf diodes color
Text: LL5817 - LL5819 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 1.0 Ampere MELF Cathode Mark FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop
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LL5817
LL5819
MIL-STD-202,
LL5817
LL5818
LL5818
LL5819
melf diodes color
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D45H11 equivalent replacement
Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS
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MJ10009
Volt32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
D45H11 equivalent replacement
2N5036 equivalent
BU108
2SD218 equivalent
MJE6044 equivalent
BD420 equivalent
2SB557 equivalent
BU326
BU100
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com 1N5820 - 1N5822 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO - 201AD FEATURES : * * * * * * * * High current capability High surge current capability High reliability
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TH09/2479
TH97/2478
1N5820
1N5822
TH07/1033
201AD
DO-201AD
UL94V-O
MIL-STD-202,
1N5820
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Untitled
Abstract: No abstract text available
Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current
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B120N/B140N
B160N
20-60Volts
OD-323F
OD-323F
ML-STD-750
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MJ-10000
Abstract: No abstract text available
Text: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON
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MJ10000
MJ10000
MJ-10000
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transorb failure
Abstract: transorb sspc 270V transorb capacitance 270vdc
Text: SERIES 91000– 28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 91000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.
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270-VDC,
20-ampere
versions--28
Mil-PRF-38534
transorb failure
transorb
sspc 270V
transorb capacitance
270vdc
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Untitled
Abstract: No abstract text available
Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current
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B120N/B140N
B160N
20-60Volts
OD-323F
OD-323F
ML-STD-750
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