20 AMP 1000 VOLT DIODE Search Results

IGBT 50 amp 1000 volt

Abstract: CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps
Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

OM9038SF

Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

SMD Diode S140

Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Abstract: SB035C015 15 amp 1000 Volt Diode
Contextual Info: SB035C015 - 0.5-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Abstract: Schottky diode wafer
Contextual Info: SB035C015-1-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

TF-10PC1UC

Abstract: glass fuse color code 100761 diode catalogue TF-18PC1UC thermal fuse color code chart 12077411 12110127 glass diode color codes junior power timer
Contextual Info: DILL BLOX MODULAR POWER DISTRIBUTION SYSTEMS PROVIDING SOLUTIONS FOR: POWER DISTRIBUTION DESIGNED FOR: FUSES CIRCUIT PROTECTION TERMINAL PROTECTION CIRCUIT BREAKERS RELAYS FLASHERS LIGHTS POWER TAPS DIODES CUSTOM COMPONENTS. Fargo Assembly of PA., Inc. 800 West Washington St. P.O. Box 550

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance

use igbt for 3 phase induction motor

Abstract: 3 phase brushless 400v
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

MSK4357

Abstract: 1000 Amp current diode
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)

10 amp igbt 1000 volt

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

SB065

Abstract: 125OC
Contextual Info: SB060C020-3-W-Ag Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Contextual Info: SB157/106C025-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage

125OC

Abstract: 20 amp 1000 Volt diode
Contextual Info: SB039C020-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Contextual Info: SB157/106C015-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage

100 Amp current 1300 volt diode

Abstract: 125OC
Contextual Info: SB051C020-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

Contextual Info: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime

Contextual Info: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime

transistor c1417

Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
Contextual Info: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components

100 Amp current 1300 volt diode

Abstract: 125OC
Contextual Info: SB051C015-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode