mosfet 10a 800v
Abstract: IRFAE50 diode 71A
Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE50
O-204AA/AE)
p252-7105
mosfet 10a 800v
IRFAE50
diode 71A
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mosfet 10a 800v
Abstract: IRFAE30
Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE30
O-204AA/AE)
parame252-7105
mosfet 10a 800v
IRFAE30
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"VDSS 800V" mosfet
Abstract: IRFBE30L IRFBE30S
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
IRFBE30S/IRFBE30L
"VDSS 800V" mosfet
IRFBE30L
IRFBE30S
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IRFNG50
Abstract: mosfet 10a 800v high power 91556A
Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1556A
IRFNG50
IRFNG50
mosfet 10a 800v high power
91556A
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Untitled
Abstract: No abstract text available
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
08-Mar-07
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IRFAG50
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG50
O-204AA/AE)
electrical252-7105
IRFAG50
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BTA12 600V
Abstract: scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STD25NF20 600v 5A scr diac triac bta08 triac 800V 1A
Text: LIGHTING Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions STBV68 STBV45 STBV42 STBV32 STX13003 ST13003 BULT118 BULK128D-B BULD1101ET4 STD13003-1 BULD118D-1 BULB39DT4 BULB49DT4 STB13005-1 BUL118 BUL128 BUL128D-B
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STBV68
STBV45
STBV42
STBV32
STX13003
ST13003
BULT118
BULK128D-B
BULD1101ET4
STD13003-1
BTA12 600V
scr 600v 12a TO-220
triac 600v. 1a. to 92
diac 30v
triac 1200V
triac 10A
STD25NF20
600v 5A scr
diac triac bta08
triac 800V 1A
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CD 1517
Abstract: IRFIBE20G
Text: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =
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OCR Scan
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IRFIBE20G
O-220
CD 1517
IRFIBE20G
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1RFPE40
Abstract: IRFPE40 NC1636 IR rectifier diode 100A 800V 54A-V
Text: |^ t ¡ 0 f " f lc l[ t ÍO r i3 l HI 4Ô554S2 D01SSR2 DQ2 M I N R K l Rectifier IRFPE40 HEXFET® Power M O S F E T • • • • • • PD-9.578B INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching
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554S2
D01SSR2
IRFPE40
O-247
O-220
UflSS452
1RFPE40
IRFPE40
NC1636
IR rectifier diode 100A 800V
54A-V
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IRFAG40
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG40
O-204AA/AE)
IRFAG40
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mosfet 10a 800v
Abstract: IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V
Text: PD - 90711B POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 R DS(on) 2.0Ω ID 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90711B
O-254AA)
IRFMG50
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
mosfet 10a 800v
IRFMG50
mosfet 10a 800v high power
IR rectifier diode 100A 800V
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IRFAG30
Abstract: No abstract text available
Text: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG30
O-204AA/AE)
IRFAG30
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mosfet 10a 800v
Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90711C
O-254AA)
IRFMG50
O-254AA.
MIL-PRF-19500
mosfet 10a 800v
MOSFET 800V 10A
irf 44 n
N CHANNEL MOSFET 10A 1000V
IRFMG50
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Untitled
Abstract: No abstract text available
Text: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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465S45S
001S2b2
IRFIBE30G
O-220
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smd diode 39a
Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
smd diode 39a
mosfet 10a 800v
IRFNG40
mosfet 10a 800v high power
smd+diode+39a
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P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
Dissi957)
EIA-418.
P-Channel MOSFET 800v
800v irf
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFBE30L
IRFBE30S
IRL3103L
P-Channel mosfet 400v
P Channel Power MOSFET IRF
ED marking code diode
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IRFMG40
Abstract: No abstract text available
Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90710B
O-254AA)
IRFMG40
O-254AA.
MIL-PRF-19500
IRFMG40
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irfae42
Abstract: JRFAE42
Text: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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IRFAE40
IRFAE42
O-204AA
G-237
IRFAE40,
IRFAE42
S54S2
G-238
JRFAE42
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in
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6781A
IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
TO247AD package
marking GC diode
induction cooking circuits
induction cooking
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IRFPE40
Abstract: No abstract text available
Text: PD-9.578B International k?r Rectifier IRFPE40 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 800V ^ D S o n =
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IRFPE40
O-247
O-220
O-218
IRFPE40
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IRFPE40
Abstract: 20V n-Channel Power MOSFET IRFPE42 c589 3A diode International Rectifier C-587 N-Channel 600V MOSFET
Text: HE I 40 5 545 2 INTERNATIONAL QQQâfl3ti 1 | Data Sheet No. PD-9.578A R E C T IF IER T-39-13 INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AN D dv/dt RATED HEXFET THANSISTOHS IRFPE4Q IRFPE42 N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package
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T-39-13
O-247AC
C-591
IRFPE40,
IRFPE42
C-592
IRFPE40
20V n-Channel Power MOSFET
c589
3A diode International Rectifier
C-587
N-Channel 600V MOSFET
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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P-Channel MOSFET 800v
Abstract: No abstract text available
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
08-Mar-07
P-Channel MOSFET 800v
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