Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2.T TRANSISTOR PLANAR Search Results

    2.T TRANSISTOR PLANAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2.T TRANSISTOR PLANAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G33S

    Abstract: I10KQ
    Text: UMG9N/FMG9A b ÿ > !s7>. £ /Transistors FMG9A S7 t /Dual Mini-Mold Transistor Epitaxal Planar NPN Silicon Transistor < —£ F ÿ ' f M/Inverter Driver 1 U M T SC-70), SM T (SC-59) t W i — FMG9A UMG9N Z .9 ± 0 .2 z.o±o.z 2 m < V T -'y $ Jis h ? > 9 * $


    OCR Scan     		PDF SC-70) SC-59) SC-74A G33S I10KQ

    BLV21

    Abstract: RF POWER TRANSISTOR NPN vhf
    Text: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLV21 OT-123. D26li4fl 7Z68950 7Z689S1 7Z68949 BLV21 RF POWER TRANSISTOR NPN vhf

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.


    OCR Scan     		PDF N5339 2N5339 2N5339 P008B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm


    OCR Scan     		PDF 2SC4524 65GHz.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm


    OCR Scan     		PDF 2SC4526

    AF4505

    Abstract: transistor BF 502 Q U 31U transistor s250
    Text: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .


    OCR Scan     		PDF 023SbOS QQ45GS BF502 AF4505 transistor BF 502 Q U 31U transistor s250

    BLY89A

    Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
    Text: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every


    OCR Scan     		PDF 711002b BLY89A -T-33-/3 PL-25W BLY89A transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2

    1B marking transistor

    Abstract: 33T4 CMBT2369
    Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60


    OCR Scan     		PDF CMBT2369 100MHz; 1B marking transistor 33T4 CMBT2369

    bly87a

    Abstract: transistor c 1974
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D H 73,1002b 0 0 2 7 ^ 3 T B P H I N BLY87A T-33-07 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF 1002b BLY87A T-33-07 --j16 bly87a transistor c 1974

    transistor 2n3053

    Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
    Text: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.


    OCR Scan     		PDF 2N3053 711002b G042b44 transistor 2n3053 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053

    Untitled

    Abstract: No abstract text available
    Text: N amer philips /di^ crete ~ □bE~p 86D 0 1 1 2 4 00133L2 □ • D T * -" 3 3 " ^ B L U 5 T “ ~ _ { _ V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband


    OCR Scan     		PDF 00133L2

    2N2297

    Abstract: LB 124 transistor
    Text: N AMER PHILIPS/DISCRETE t.'ìE ]> m □□200^1 2=50 2N2297 I SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor intended fo r large signal h.f. and v.h.f. am plifier applications. Q UICK REFERENCE D A T A Collector-base voltage open em itter v CBO max.


    OCR Scan     		PDF S3T31 2N2297 2N2297 LB 124 transistor

    Untitled

    Abstract: No abstract text available
    Text: BF199 N AMER PHILIPS/DISCRETE DbE D bbS3T31 DOlSHbD T T-3/-2. V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision


    OCR Scan     		PDF BF199 bbS3T31 BF199 00122b3

    Untitled

    Abstract: No abstract text available
    Text: h7 / T ransistors UMG10N h-7 > V ^ ^ / D u a l Mini-Mold Transistor 7 i7 /R - i- ^ K 7 J l ' J l ' - t M N P N y lJ 3 > h 7 > y * $ Epitaxal Planar NPN Silicon Transistor < > / \ ' - 2 H y 'f / ’v/Inverter Driver • 1 U M T S C -7 0 ) /Dimensions (Unit : mm)


    OCR Scan     		PDF UMG10N

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC2094

    2n3966

    Abstract: transistor 2sk CRS15
    Text: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f


    OCR Scan     		PDF 2N3966 -T-3S-25' aTO-72 002b34fl T-35-25 2n3966 transistor 2sk CRS15

    H7 RF

    Abstract: No abstract text available
    Text: h7 y UMW11N/FMW 11 £ /Transistors 7 a 7 / ^ - î - ^ K h"7 > V > ^ /D iia l Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor liiJià&JStiffl/RF Amplifier ' • W ft 1 U M T SC-70), SM T (SC-59) 2 m<r> f- v > V X 2 tfâ — if A 0 / Dimensions (Unit : mm)


    OCR Scan     		PDF UMW11N/FMW SC-70) SC-59) SC-74A 200mW UMW11N/FMW11 H7 RF

    k0303

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. C X T 2 90 7A PNP SILICON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    OCR Scan     		PDF CXT2907A OT-89 k0303

    Untitled

    Abstract: No abstract text available
    Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


    OCR Scan     		PDF BFG135 OT223

    zt751

    Abstract: TRANSISTOR zt751 zt75
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Planar E pitaxial Transistor PZT751T1 M otorola Preferred D evice This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the S O T -2 2 3 package which is designed for


    OCR Scan     		PDF PZT751T1 inch/1000 PZT751T3 inch/4000 zt751 TRANSISTOR zt751 zt75

    2SC2094

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed Dimensions in mm for R F power amplifiers in V H F band mobile radio applications.


    OCR Scan     		PDF 2SC2094 2SC2094

    118-136 mhz

    Abstract: THOMSON-CSF, RF TRANSISTOR RF Amplifiers Thomson-CSF amplifier
    Text: S G S-THOMSON OMC D | 7 ^ 2 3 7 OOaOlll 5 D T ~ ?-*f SOLID STATE MICROWAVE SD1224-2 i THOMSON-CSF COMPONENTS CORPORATION I Montgomeryville, PA 18936• 215 362-8500■ TWX 510-661-7299 _ . ' _; VHF COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1224-2 is an epitaxial silicon NPN-planar transistor designed


    OCR Scan     		PDF SD1224-2 118-136 mhz THOMSON-CSF, RF TRANSISTOR RF Amplifiers Thomson-CSF amplifier

    TRANSISTOR D 570

    Abstract: BF 145 transistor transistor bf
    Text: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled


    OCR Scan     		PDF 23SLQS 0GQ4S23 TRANSISTOR D 570 BF 145 transistor transistor bf

    BLX93A

    Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
    Text: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bbS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe


    OCR Scan     		PDF BLX93A BLX93A BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90