High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications
Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and
|
Original
|
|
PDF
|
MRFG35010M
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
|
Original
|
RDMRFG35010MT1BWA
MRFG35010MT1
MRFG35010M
|
PDF
|
smd diode J476
Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
|
Original
|
DL110/D
smd diode J476
VIPER L2A RoHS
Viper L2A
mmic amplifier marking code N10
mosfet j279
MRF 966 Mesfet
PIN diode MACOM SPICE model
NCR 2400 SMA DATASHEET Datasheet
MRF 899
smd wb3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
|
Original
|
RDMRFG35003MT1BWA
MRFG35003MT1
|
PDF
|
db14g
Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
|
Original
|
MRFG35010MT1
MRFG35010MT1
RDMRFG35010MT1BWA
db14g
CDR33BX104AKWS
T491X226K035AS
LL1608-FHN2K
85dBp
MRFG35010M
|
PDF
|
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization
|
Original
|
P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
|
Original
|
MRFG35003MT1
MRFG35003MT1
RDMRFG35003MT1BWA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold
|
Original
|
P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
|
PDF
|
10147
Abstract: GE capacitor 2R13-6 G200
Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold
|
Original
|
P4525
P5182
1-877-GOLDMOS
1522-PTF
10147
GE capacitor
2R13-6
G200
|
PDF
|
G200
Abstract: 10147
Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold
|
Original
|
P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
G200
10147
|
PDF
|
MRFG35005MT1
Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
|
Original
|
MRFG35005MT1
MRFG35005MT1
RDMRFG35005MT1BWA
CDR33BX104AKWS
T491X226K035AS
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
LL-210
|
PDF
|
LL1608-FHN2K
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
|
Original
|
MRFG35005MT1
RDMRFG35005MT1BWA
LL1608-FHN2K
|
PDF
|
transistor D 1666
Abstract: PTE10021 bq 726
Text: E R IC SSO N í PTE 10021* 30 Watts, 1 . 4 - 1 . 6 GHz L D M O S Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applica tions in the 1.4 to 1.6 GHz range. It is rated at 30 watts minimum output
|
OCR Scan
|
|
PDF
|
gps transmitter circuit diagram
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
|
Original
|
37nces
MRF186)
MRF186
31JUL04
31JAN05
MRF186
gps transmitter circuit diagram
|
PDF
|
|
|
2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
|
Original
|
DL110/D
2a258 transistor
Fuji Electric tv schematic diagram
smd transistor WB3
VHF FM PLL schematic mc145152
Motorola transistor smd marking codes
MARK 176 SOT363 RF
Note AR164, Motorola RF Device Data, Volume II, D
tip off 0401 mosfet transistor
cordless phone Transceiver IC
semiconductors cross index
|
PDF
|
ATP10K100M
Abstract: 100w1000 Amplifier Research LA250
Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation
|
Original
|
250T1G3,
200T2G8A
250T8G18
January/3500
ATP10K100M
100w1000
Amplifier Research LA250
|
PDF
|
MRF186
Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
|
Original
|
MRF186/D
31JAN05
MRF186
31JUL04
MRF186
C10B4
motorola MOSFET 935
Z11-Z16
RF power amplifier MHz
MRF186 equivalent
|
PDF
|
MRF186
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
|
Original
|
MRF186/D
MRF186
DEVICEMRF186/D
|
PDF
|
MRF186 equivalent
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
|
Original
|
MRF186/D
MRF186
MRF186
MRF186/D
MRF186 equivalent
|
PDF
|
motorola MOSFET 935
Abstract: MRF186 transistor motorola 236
Text: MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
|
Original
|
MRF186/D
MRF186
motorola MOSFET 935
MRF186
transistor motorola 236
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Applications • WiMAX, WCDMA, and LTE base station receivers Ultra Low Noise Amplifiers LNAs • WLAN enterprise access point receivers Select LNAs Available from Stock for Prototype or High-Volume Production • GPS receivers Skyworks Solutions offers a select group of ultra low noise, high linearity low noise
|
Original
|
|
PDF
|
MRF186
Abstract: No abstract text available
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
|
Original
|
MRF186/D
MRF186
MRF186
|
PDF
|
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 9601 mosfet
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
|
Original
|
MRF186/D
31JAN05
MRF186
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
MRF186
9601 mosfet
|
PDF
|
HMC 713
Abstract: hmc713 Logarithmic Amplifier detector HMC713LP3E Logarithmic Amplifier detector rf power
Text: HMC713LP3E v01.1009 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz Typical Applications Features The HMC713LP3E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz • WiMAX, WiBro & LTE/4G
|
Original
|
HMC713LP3E
HMC713LP3E
HMC 713
hmc713
Logarithmic Amplifier detector
Logarithmic Amplifier detector rf power
|
PDF
|
