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    TE Connectivity CRG0402F22K

    RES SMD 22K OHM 1% 1/16W 0402
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    DigiKey CRG0402F22K Digi-Reel 30,576 1
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    CRG0402F22K Cut Tape 30,576 1
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    CRG0402F22K Reel 20,000 10,000
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    Master Electronics CRG0402F22K
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    TDK Corporation CGA2B2X8R1H222K050BE

    CAP CER 2200PF 50V X8R 0402
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    DigiKey CGA2B2X8R1H222K050BE Cut Tape 14,410 1
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    TME CGA2B2X8R1H222K050BE 10,000
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    TE Connectivity CFR100J22K

    RES 22K OHM 5% 1W AXIAL
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    DigiKey CFR100J22K Ammo Pack 8,000 1,000
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    Master Electronics CFR100J22K
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    KEMET Corporation C317C222K1R5TA

    CAP CER 2200PF 100V X7R RADIAL
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    DigiKey C317C222K1R5TA Bulk 4,387 1
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    TME C317C222K1R5TA 68 1
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    Chip Stock C317C222K1R5TA 4,500
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    YAGEO Corporation CFR-12JR-52-2K

    RES 2K OHM 5% 1/6W AXIAL
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    DigiKey CFR-12JR-52-2K Cut Tape 2,285 1
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    Bristol Electronics CFR-12JR-52-2K 2,350
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    2.2K Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    22K112-R Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2.2K3A1-25 Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF
    2.2K3A1A Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF
    2.2K3A1AM Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF
    2.2K3A1IA Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF
    2.2K3A1W2 Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF
    2.2K3A1W3 Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF
    2.2K3A2B Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF
    2.2K3A359I Unknown THERMISTOR NTC Scan PDF

    2.2K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC123TKA Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 2.2kΩ SMT3 50V SOT-346(SC-59) l Features 1) Built-In Biasing Resistor


    Original     		DTC123TKA 100mA 100mA OT-346 SC-59) PDF

    Untitled

    Abstract: No abstract text available
    Text: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ


    Original     		DTA123E -100mA -100mA DTA123EM DTA123EE SC-105AA) OT-416 SC-75A) PDF

    xds pnp

    Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23


    OCR Scan     		10kii) Q62702-C2383 OT-23 xds pnp Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC023J series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Builtin Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 47kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of


    Original     		DTC023J 100mA 100mA DTC023JM DTC023JEB SC-105AA) SC-89) PDF

    TF256

    Abstract: No abstract text available
    Text: Ordering number : ENA1616B TF256 N-Channel JFET http://onsemi.com 20V, 140 to 450 A, 1.7mS, USFP Features • • • • • • High gain : GV=2.7dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz Ultrasmall package facilitates miniaturization in end products [1.0mmx0.6mm×0.27mm (max 0.3mm)]


    Original     		ENA1616B TF256 A1616-7/7 TF256 PDF

    BCR108W

    Abstract: VSO05561
    Text: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR108W VSO05561 EHA07184 OT323 Nov-29-2001 BCR108W VSO05561 PDF

    DSA0037427

    Abstract: SEMH10
    Text: SEMH10 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ)


    Original     		SEMH10 EHA07174 OT666 Feb-09-2004 DSA0037427 SEMH10 PDF

    pnp array

    Abstract: SEMD10 DSA0037426 DSA003742
    Text: SEMD10 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)


    Original     		SEMD10 OT666 EHA07176 OT666 Feb-26-2004 pnp array SEMD10 DSA0037426 DSA003742 PDF

    FJX3013R

    Abstract: FJX4013R
    Text: FJX3013R FJX3013R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJX4013R 2 1 SOT-323 1. Base 2. Emitter 3. Collector


    Original     		FJX3013R FJX4013R OT-323 FJX3013R FJX4013R PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2213 SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=2.2K£1, R2=47K£1) • C om plem ent to KSR 1213 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		KSR2213 -10mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: FJN3313R FJN3313R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJN4313R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


    Original     		FJN3313R FJN4313R FJN3313RBU FJN3313RTA PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR1013 KSR1013 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR2013 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit


    Original     		KSR1013 KSR2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR1113 KSR1113 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to KSR2113 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original     		KSR1113 KSR2113 OT-23 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR2213 KSR2213 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR1213 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit


    Original     		KSR2213 KSR1213 O-92S PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2013 SWITCHING APPLICATION B ias R esistor Built In T O -92 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R1=2.2K£1, R2=47K£1) • C om plem ent to KSR 1013 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		KSR2013 -10mA, PDF

    KIA6225S

    Abstract: KIA6225P G22K KIA6 3K10K
    Text: SEMICONDUCTOR KIA6225P/S TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT DUAL PRE-AMPLIFIER W D High voltage gain : GVO=100dB Typ. at f=1kHz. G Excellent channel separation and high ripple rejection. : CHsep=65dB(Typ.) P d (f=10kHz, Rg=2.2k L H Dual pre amplifier for car or home stereo use.


    Original     		KIA6225P/S 100dB 10kHz, 20kHz. KIA6225S KIA6225P G22K KIA6 3K10K PDF

    BCR553

    Abstract: No abstract text available
    Text: BCR553 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		BCR553 VPS05161 EHA07183 Jul-23-2001 BCR553 PDF

    BCR08PN

    Abstract: VPS05604
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Jul-12-2001 BCR08PN VPS05604 PDF

    BCR158

    Abstract: BCR158F BCR158L3 BCR158T SEMB10
    Text: BCR158./SEMB10 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		BCR158. /SEMB10 BCR158/F/L3 BCR158T/W SEMB10 EHA07183 EHA07173 BCR158 BCR158L3 BCR158F BCR158 BCR158F BCR158L3 BCR158T SEMB10 PDF

    PWR4522

    Abstract: THERMAL Fuse RESISTOR
    Text: PL IA NT CO M *R oH S Features Applications • Fuses safely at 220/240 mains voltage ■ White goods ■ Resistance values as high as 2.2K ohms ■ Inverters ■ Flameproof silicone coating ■ Lighting ■ Low TCR ■ Metering ■ RoHS compliant* PWR4522 Fusible Power Resistors


    Original     		PWR4522 PWR4522A THERMAL Fuse RESISTOR PDF

    BCR108W

    Abstract: VSO05561
    Text: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR108W VSO05561 EHA07184 OT323 Jul-16-2001 BCR108W VSO05561 PDF

    A1906

    Abstract: SC-106A tf262 IT16225 TF262TH
    Text: TF262TH Ordering number : ENA1906 SANYO Semiconductors DATA SHEET TF262TH N-channel Silicon Juncton FET For ECM use Features • • • • • Low output noise voltage : VNO= -112dB typ. VCC=2V, RL=2.2kΩ, Cin=5pF Ultrasmall package facilitates miniaturization in end products : 1.4mm x 1.2mm × 0.34mm


    Original     		ENA1906 TF262TH -112dB A1906-5/5 A1906 SC-106A tf262 IT16225 TF262TH PDF

    FJY3013R

    Abstract: FJY4013R
    Text: FJY3013R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=2.2KΩ, R2=47KΩ • Complement to FJY4013R Eqivalent Circuit C C S13 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		FJY3013R FJY4013R FJY3013R FJY4013R PDF

    GAAS FET AMPLIFIER for optical receiver

    Abstract: transimpedance amplifier F0100504B F0321818M F0832483T FET differential amplifier circuit
    Text: F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise typ.6pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range


    Original     		F0100504B 100MHz) 1900MHz OC-48/STM-16 F0100504B OC-48/STM-16, MIL-STD-883C GAAS FET AMPLIFIER for optical receiver transimpedance amplifier F0321818M F0832483T FET differential amplifier circuit PDF