2.1 CHANNEL CIRCUIT Search Results

5.1 subwoofer AMPLIFIER CIRCUIT DIAGRAM

Abstract: 5.1 speaker with subwoofer circuit diagram subwoofer crossover schematic sub-woofer with 5.1 amp circuit diagram BEST active subwoofer sub-woofer pc amplifier schematic circuit diagram 7.1 speaker with subwoofer circuit diagram 2.1 channel subwoofer amplifier circuit diagram subwoofer amplifier circuit diagram 2.1 speaker with subwoofer circuit diagram
Contextual Info: 2.1 Channel Digital Amplifier BI3010AP1 Data Sheet Rev.1.1, 2005.06.06 Biforst Technology Inc. BI3010AP1 2.1 Channel Digital Amplifier 2.1 Channel Digital Amplifier BI3010AP1 GENERAL DESCRIPTION The BI3010AP1 is the very right choice for 2.1 channel audio systems. The BI3010AP1 is a

TMPA421DS

Abstract: TQFP48L KML2012Q102N TQFP48 bass noise filter circuits pcb VR 22K preset
Contextual Info: Tai-1 Microelectronics www.taimec.com.tw / TMPA421DS Preliminary www.class-d.com.tw 15W + 6W x 2 Rev.2.0 December 20, 2005 2.1 Channel CLASS-D AUDIO POWER AMPLIFIER GENERAL DESCRIPTION FEATURES The TMPA421DS is a 2.1 Channel Class-D output ♦ Integrated 2.1 channel power amplifier in one

multimedia subwoofer circuit diagram

Abstract: BEST active subwoofer 7.1 speaker with subwoofer circuit diagram 2.1 subwoofer circuit diagram 2.1 channel subwoofer amplifier circuit diagram sub-woofer 2.1ch 12v subwoofer amplifer circuit 12v single channel subwoofer AMPLIFIER subwoofer amplifier circuit diagram CQP1474JD
Contextual Info: 2.1 Channel Digital Amplifier with 12V Driver Single Chip Spirit-On Only BI30020B Data Sheet Rev.1.4, 2006.02.10 Biforst Biforst Technology Inc. BI30020B 2.1Ch DAmp with 12V Driver Single Chip 2.1 Channel Digital Amplifier with 12V Driver Single Chip BI30020B

Contextual Info: LM4550B LM4550B AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and National 3D Sound Literature Number: SNAS276D LM4550B AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and

ds 300 subwoofer digital

Abstract: WM8606 automotive compressor subwoofer AES17 J-STD-020B WM8602 subwoofer filter Active subwoofer circuit subwoofer amplifier standby
Contextual Info: WM8602 w 2.1 Channel PWM Controller DESCRIPTION FEATURES The WM8602 comprises a high performance stereo + sub PWM digital power amplifier controller. Simply by adding appropriate power output stages a 2.1 channel power amplifier may be built. Two identical full audio bandwidth

4350H

Abstract: wireless 3d SURROUND sound system
Contextual Info: LM4550 LM4550 AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and National 3D Sound Literature Number: SNAS032E LM4550 AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and

8ohm .5W speaker

Abstract: ls1 8ohm .5W speaker TMPA221DS NB17 221DS ls1 loud speaker VR 22K preset SWITCH L3
Contextual Info: tai'mec 2.7W + 0.6W x 2 TMPA221DS Preliminary www.taimec.com.tw / www.class-d.com.tw Rev.1.0 December 24, 2007 2.1 Channel CLASS-D AUDIO POWER AMPLIFIER GENERAL DESCRIPTION FEATURES The TMPA221DS is a 2.1 channel stereo & bass class-D audio ♦ 2.5V to 6V Single Supply

led gl3

Contextual Info: LM4549A LM4549A AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound Literature Number: SNOS987D LM4549A AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound General Description Key Specifications

Contextual Info: LM4549B LM4549B AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound Literature Number: SNOSAI5D LM4549B AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound General Description Key Specifications

Contextual Info: LM 4549B LM4549B AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound Texas In s t r u m e n t s Literature Number: SNOSAI5D t Semiconductor Septem ber 26, 2011 LM4549B AC 7 Rev 2.1 Multi-Channel Audio Codée with Sample

Contextual Info: Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A ̈ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and

2.1 home theater circuit diagram

Abstract: TP2050 TK2050 TC2000 P002B CON2 2pin connector audio amplifier 50w 50v J147 100V rca 3001 transistor AES17
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TK2050 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2050 EVALUATION BOARD Technical Information – Board Rev. 2.1 Revision 1.0 – September 2002 GENERAL DESCRIPTION The EB-TK2050 Revision 2.1 is a stereo 50W per channel audio amplifier designed to

Contextual Info: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

FDS8935

Abstract: C249
Contextual Info: Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A „ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and

RT3J33M

Abstract: INJ0003AX
Contextual Info: RT3J33M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J33M is a composite transistor built with two INJ0003AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

INJ0002AX

Abstract: RT3J22M
Contextual Info: RT3J22M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J22M is a composite transistor built with two INJ0002AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

INK0002AX

Abstract: RT3K22M channel mosfet
Contextual Info: RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K22M is a composite transistor built with two INK0002AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

INJ0001AX

Abstract: RT3J11M
Contextual Info: RT3J11M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J11M is a composite transistor built with two INJ0001AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

INJ0011AX

Abstract: RT3J55M vth1020v
Contextual Info: RT3J55M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J55M is a composite transistor built with two INJ0011AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

Contextual Info: FDMC8360L N-Channel Power Trench MOSFET 40 V, 80 A, 2.1 mΩ Features General Description „ Max rDS on = 2.1 mΩ at VGS = 10 V, ID = 27 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

RT3K33M

Abstract: INK0003AX
Contextual Info: RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K33M is a composite transistor built with two INK0003AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

INK0010

Abstract: INK0010AX
Contextual Info: RT3K44M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K44M is a composite transistor built with two INK0010AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

INK0001AX

Abstract: RT3K11M
Contextual Info: RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K11M is a composite transistor built with two INK0001AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

RT3K66M

Abstract: INK0012AX
Contextual Info: RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K66M is a composite transistor built with two INK0012AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65