Untitled
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: |S21e| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05
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MT3S111TU
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Abstract: No abstract text available
Text: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm FEATURES • Low Noise Figure :NF=1.7dB @f=5.8GHz • High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P 2 1 USQ 2 Absolute Maximum Ratings (Ta = 25°C)
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MT4S200U
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Untitled
Abstract: No abstract text available
Text: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit:mm FEATURES 2.1±0.1 2 2 1 Marking 0.2+0.1 –0.05 1.25±0.1 3 High Gain:|S21e|2=9.5dB @f=5.8GHz 4 • 1.3±0.1 Low Noise Figure :NF=1.7dB (@f=5.8GHz)
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MT4S200U
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Untitled
Abstract: No abstract text available
Text: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm Features • Low Noise Figure :NF=1.7dB @f=5.8GHz • High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P 2 1 USQ 2 Absolute Maximum Ratings (Ta = 25°C)
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MT4S200U
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Untitled
Abstract: No abstract text available
Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 L7 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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BGA622L7
GPC09484
CPSG9506
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Untitled
Abstract: No abstract text available
Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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14GHz,
BGA622
GPS05605
OT343
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726-BGA622H6820
Abstract: marking BXs SOT343 lna Germanium power
Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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14GHz,
BGA622
GPS05605
OT343
726-BGA622H6820
H6820
marking BXs
SOT343 lna
Germanium power
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BGA622
Abstract: GPS05605 JESD22-A114 Germanium power
Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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14GHz,
BGA622
GPS05605
OT343
BGA622
GPS05605
JESD22-A114
Germanium power
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Germanium diode data sheet
Abstract: INFINEON PART MARKING BGA622L7 Germanium power
Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 L7 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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BGA622L7
GPC09484
CPSG9506
Germanium diode data sheet
INFINEON PART MARKING
BGA622L7
Germanium power
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Untitled
Abstract: No abstract text available
Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S101T
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60Ghz
Abstract: 60GHz transistor MT4S100T
Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P6 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S100T
60Ghz
60GHz transistor
MT4S100T
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Untitled
Abstract: No abstract text available
Text: MT4S301T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C
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MT4S301T
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60Ghz
Abstract: 60GHz transistor MT4S104T
Text: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 3 4 P1 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S104T
60Ghz
60GHz transistor
MT4S104T
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Untitled
Abstract: No abstract text available
Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S102T
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Untitled
Abstract: No abstract text available
Text: MT4S300T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P3 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C
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MT4S300T
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OA72
Abstract: diode aa119 AA119 germanium rectifier diode 2-OA72 Diode germanium oa OA72 diode aa119 diode aa1* germanium germanium rectifier
Text: OA72 2 -O A 7 2 G E R M A N IU M DIO DES Germanium r . f . re c tifie r diode in all g lass construction with high re v e rs e r e sistan ce. Type 2-OA72 con sists of 2 diodes OA72 selected fo r operation in a ratio d etec to r or sim ila r c ir c u its .
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2-OA72
AA119
OA72
diode aa119
germanium rectifier diode
Diode germanium oa
OA72 diode
aa119 diode
aa1* germanium
germanium rectifier
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2N2659
Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
Text: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE
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2N2659,
2N2660,
2N2661,
2N2662,
2N2663,
2N2664
2N2665,
2N2666,
2N2667,
2N2668,
2N2659
2N2660
2N2662
2N2665
2N2668
Germanium Transistor
Texas Germanium
2N2667
c 2665 transistor
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diode OA-79
Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Text: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates
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2-OA79
2-OA79
diode OA-79
germanium diode OA79
OA79
OA79 diode reverse circuit
0A79
oa79 diode
0A79 diode
Diode germanium oa
DIODE OA79
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Untitled
Abstract: No abstract text available
Text: 1N270 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. 0 .1 0 5 [2 . 6 6 7 ] 0 . 0 1 9 -0 .0 2 1 0 . 4 8 3 -0 . 5 3 3 ] 1.000 [2 5 .4 0 ] MAXIMUM RATINGS 200 If mA p e a k
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1N270
1N270
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2N512
Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power
Text: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE
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2N512,
2N512A,
2N512B
15-Amp
150-Watt
7S222
2N512
Texas Germanium
5 amp germanium pnp
Germanium Amplifier
Germanium Transistor
GERMANIUM PNP LOW POWER TRANSISTORS
2N512A
Germanium power
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2SB156
Abstract: 2SB156A transistor 2sb561 SB156A GERMANIUM HITACHI 2SB561 SB156 Germanium Transistor 55B8
Text: 2 S B 1 5 6 , 2 S B 1 S 6 A GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT - 10.2max—- — 38.1min—1. -*• ì -v r 1* | - . 1. i 9 \ E m itte r 2. ^ , ^ • B ase 3. 3 ^ 7 I ? ! C o llecto r D im en sio n s in m m (JEDEC TO-1 ABSOLUTE MAXIMUM RATINGS (Ta=25Xi)
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2SB156,
2SB156
2SB156A
100mmxlOOmmX
SB156A
-150mA
270Hz
SB156,
2SB156A
transistor 2sb561
SB156A
GERMANIUM HITACHI
2SB561
SB156
Germanium Transistor
55B8
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tunnel diodes
Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Text: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance
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TU210
Q62701
tunnel diodes
tunnel diode
e16 diode
tunnel diode DO-7
2.TU
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OA79
Abstract: 0A79 AA119 0A79 diode AA119 application germanium diode OA79 OA79 diode reverse circuit aa119 diode diode AA119 diode OA-79
Text: OA79 2-O A 79 GERMANIUM DIODE Germ anium diode in all g la ss construction fo r u se in a .m . d etec to r c irc u its. Type 2-OA 79 co n sists of 2 diodes OA79 selected fo r operation in a ratio d etecto r c irc u it. MECHANICAL DATA D im ensions in mm not tinned
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2-OA79
2-OA79
AA119Â
-AA119
OA79
0A79
AA119
0A79 diode
AA119 application
germanium diode OA79
OA79 diode reverse circuit
aa119 diode
diode AA119
diode OA-79
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AA137
Abstract: "Point Contact Diode" Germanium Diode tfk Germanium diode IV germanium rectifier germanium rectifier diode point contact diode germanium point contact diode Germanium Diode aa137 uhf germanium diode
Text: A A 137 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Regelspannungserzeugung in FS-Geräten Applications: AGC rectifier in TV receivers Abmessungen in mm Dimensions in mm 0 2 ,6 II- - - - - - - - - - - - - - - - - - - - 1 II 1 1 — — - 2 6 - —
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AA137
39MHz,
AA137
"Point Contact Diode"
Germanium Diode tfk
Germanium diode IV
germanium rectifier
germanium rectifier diode
point contact diode
germanium point contact diode
Germanium Diode aa137
uhf germanium diode
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