2 W RF 150-200 MHZ Search Results

2 W RF 150-200 MHZ Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

2 W RF 150-200 MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
527 MOSFET TRANSISTOR motorola Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF134 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	Original	PDF	MRF134 MRF134 AN215A 527 MOSFET TRANSISTOR motorola vk200* FERROXCUBE SELF vk200 Beckman resistor network mrf134 motorola
MRF174 Abstract: "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.	Original	PDF	MRF174/D MRF174 MRF174/D* MRF174 "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual
"RF MOSFETs" Abstract: motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174 Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.	Original	PDF	MRF174/D MRF174 MRF174/D* "RF MOSFETs" motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174
RF POWER VERTICAL MOSFET 1000 w Abstract: J50 mosfet Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	PDF	MRF174 MRF174. AN721, MRF174 RF POWER VERTICAL MOSFET 1000 w J50 mosfet
J50 mosfet Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.	Original	PDF	MRF136 MRF136 AN215A. J50 mosfet J119 fet transistor k 2723 J892 J168 J119 transistor
MRF134 Abstract: transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266 Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	Original	PDF	MRF134/D MRF134 MRF134/D* MRF134 transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266
Triode 805 Abstract: MRF134 zener motorola 1N5925A AN215A AN721 Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.	Original	PDF	MRF134/D MRF134 MRF134/D* Triode 805 MRF134 zener motorola 1N5925A AN215A AN721
j764 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF137/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF137 N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	Original	PDF	MRF137/D MRF137 MRF137 MRF137/D* MRF137/D j764
transistor motorola 359 Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134 Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.	Original	PDF	MRF134/D MRF134 MRF134/D* transistor motorola 359 Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
Q 817 Abstract: Triode 805 zener motorola 1N5925A AN211A AN215A AN721 MRF137 J302 fet arco 406 Text: MOTOROLA Order this document by MRF137/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF137 N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	Original	PDF	MRF137/D MRF137 MRF137/D* Q 817 Triode 805 zener motorola 1N5925A AN211A AN215A AN721 MRF137 J302 fet arco 406
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.	Original	PDF	MRF171/D MRF171 MRF171/D*
MRF174 Abstract: motorola an721 application Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF174 ARCHIVE INFORMATION N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.	Original	PDF	MRF174/D MRF174 MRF174/D MRF174/D* motorola an721 application
motorola bipolar transistor data manual Abstract: AN721 motorola an721 application zener motorola 1N5925A AN211A AN215A MRF137 J302 fet Text: MOTOROLA Order this document by MRF137/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF137 N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	Original	PDF	MRF137/D MRF137 MRF137/D* motorola bipolar transistor data manual AN721 motorola an721 application zener motorola 1N5925A AN211A AN215A MRF137 J302 fet
VK200-19/4B Abstract: 5Bp power control motorola rf power MRF314 "30 mhz" driver Amplifier motorola rf device data book vk200 coil VK200 J121 power unit Text: MOTOROLA Order this document by MRF314/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF314 . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	PDF	MRF314/D MRF314 MRF314/D* VK200-19/4B 5Bp power control motorola rf power MRF314 "30 mhz" driver Amplifier motorola rf device data book vk200 coil VK200 J121 power unit

vk200 coil Abstract: MICA 06 MRF316 VK200 MOTOROLA 381 equivalent Text: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	PDF	MRF316/D MRF316 MRF316/D* vk200 coil MICA 06 MRF316 VK200 MOTOROLA 381 equivalent
6a3 diode zener Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331 Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.	Original	PDF	MRF136/D MRF136 6a3 diode zener 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
MW6IC1940NB Abstract: A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J1213 Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical	Original	PDF	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 MW6IC1940NB A114 A115 AN1977 AN1987 C101 JESD22 J1213
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This	Original	PDF	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers,
mrf3163 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	Original	PDF	MRF316/D MRF316 MRF316/D mrf3163
MW6IC1940NB Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735 Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N - 2 Rev. 4, 3/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage	Original	PDF	MW6IC1940N MW6IC1940NB MW6IC1940NBR1 MW6IC1940N-2 A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735
1n4740 MOTOROLA Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740 Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.	Original	PDF	MRF136Y/D MRF136Y 1n4740 MOTOROLA 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
TM09-1 Abstract: No abstract text available Text: RF Transformers W 12,5 to 1800 Q ideband 4 kHz to 8 0 0 MHz Style X65 Standard W38 T, TH, TT Q RATIO FREQUENCY M Hz INSERTION LOSS# CARD DATA 2 dB M Hz 1 dB M Hz 2 2.5 3 .05-200 .015-300 07-200 01-100 05-250 .05-200 .015-300 .07-200 .01-100 .05-200 .08-150	OCR Scan	PDF	T13-1T T16-6T P215-4038 TM05-1T TM06-1 TM09-1 TMO-13-1T TM016-1 TTM025-1 1H-X65 TM09-1
wia 102 Abstract: 5866 triode tb2.5/300 tb2.5 2X40 2x208 Text: T B 2.5 /3 0 0 5866 J _ v RF P O W E R TRIODE QUICK REFERENCE D ATA m F re q . (M H z) 4 75 2 150 1 .5 200 C te le g r. Va (V) W0 (W) 2500 2000 1500 1000 390 295 210 126 B te le p h . C o sc. Va (V) 2500 2000 2000 w0 (W) C a m od. W0 (W)	OCR Scan	PDF	2x210 2x315 7Z052V-2CI2he/cii wia 102 5866 triode tb2.5/300 tb2.5 2X40 2x208
Untitled Abstract: No abstract text available Text: S G S -T H O M S O N S D 1 5 3 8 -0 2 m RF & M I C R O W A V E T R A N S I S T O R S A V IO N IC S A P P L IC A T IO N S DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz	OCR Scan	PDF	SD1538-02

2 W RF 150-200 MHZ Search Results

2 W RF 150-200 MHZ Result Highlights (5)

2 W RF 150-200 MHZ Datasheets Context Search

527 MOSFET TRANSISTOR motorola

MRF174

"RF MOSFETs"

RF POWER VERTICAL MOSFET 1000 w

J50 mosfet

MRF134

Triode 805

j764

transistor motorola 359

Q 817

Untitled

MRF174

motorola bipolar transistor data manual

VK200-19/4B

vk200 coil

6a3 diode zener

MW6IC1940NB

Untitled

mrf3163

MW6IC1940NB

1n4740 MOTOROLA

TM09-1

wia 102

Untitled