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    2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Search Results

    2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


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    SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 PDF

    C 5478 transistor

    Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3


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    NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 173278 LARGE SIGNAL IMPEDANCES PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


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    SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor PDF

    M 9587

    Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
    Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station


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    SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210 PDF

    CLASS AB

    Abstract: NEL2012F03-24
    Text: PRELIMINARY DATA SHEET NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN:


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    NEL2012F03-24 NEL2012F03-24 24-Hour CLASS AB PDF

    1N4153

    Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


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    NEL200101-24 NEL200101-24 24-Hour 1N4153 NEL2001 2.2 uf 50v electrolytic PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    germanium transistors PNP

    Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
    Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,


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    IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR PDF

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


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    SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications PDF

    mosfet class d

    Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
    Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less


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    AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-3457; Rev 2; 2/07 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    MAX9701 B20-1 PDF

    5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: MAX4060 MAX4238 MAX9700 MAX9701 MAX9701EBP-T MAX9701ETG
    Text: 19-3457; Rev 1; 9/05 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    MAX9701 MAX9701 B20-1 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM MAX4060 MAX4238 MAX9700 MAX9701EBP-T MAX9701ETG PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-3457; Rev 1; 9/05 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    MAX9701 B20-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-3457; Rev 2; 2/07 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    MAX9701 MAX9701 B20-1 PDF

    potentiometer 1k ohm

    Abstract: 7J23 ansi y32 TRANSISTOR n 522
    Text: Preliminary Product Description SP-2055 Stanford Microdevices offers a high-performance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a low cost, power flanged package. Ideal for


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    425mA) SP-2055 -31dBc SP-2055 potentiometer 1k ohm 7J23 ansi y32 TRANSISTOR n 522 PDF

    potentiometer 1k ohm

    Abstract: potentiometer 1k ansi y32.2 ansi y32 TORX1 TRANSISTOR n 522 200 ohm resistor
    Text: Preliminary Product Description SP-2055P Stanford Microdevices offers a high-performance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDMOS has been optimized for high peak to average


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    425mA) SP-2055P -31dBc SP-2055P potentiometer 1k ohm potentiometer 1k ansi y32.2 ansi y32 TORX1 TRANSISTOR n 522 200 ohm resistor PDF

    MAX4238 TYPICAL

    Abstract: power amplifier frequency range 300Hz 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM class d rf power amplifier Complementary Audio Power Amplifier single chip audio power amplifier TDK common mode choke application note MAX4060 MAX4238 MAX9700
    Text: 19-3457; Rev 0; 6/05 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo class D audio power amplifier provides class AB amplifier audio performance with the benefits of class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    MAX9701 MAX9701 MAX4238 TYPICAL power amplifier frequency range 300Hz 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM class d rf power amplifier Complementary Audio Power Amplifier single chip audio power amplifier TDK common mode choke application note MAX4060 MAX4238 MAX9700 PDF

    MAX4060

    Abstract: MAX4238 MAX9700 MAX9701 MAX9701EBP MAX9701ETG MAX9722B TG45 ACM4532-801 Class D Audio Power Amplifier
    Text: 19-3457; Rev 3; 3/09 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    MAX9701 MAX9701 MAX4060 MAX4238 MAX9700 MAX9701EBP MAX9701ETG MAX9722B TG45 ACM4532-801 Class D Audio Power Amplifier PDF

    TDK common mode choke notes

    Abstract: No abstract text available
    Text: 19-3457; Rev 2; 2/07 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701


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    MAX9701 TDK common mode choke notes PDF

    atc100B100GT500XT

    Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    MRF21010LSR1 MRF21010 atc100B100GT500XT ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi PDF

    NIPPON CAPACITORS

    Abstract: Transistor J438 CRCW08051001FKEA MRF21010
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010 PDF

    600W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 600w CLASS D audio amplifier 2N2222 die "Microphone Preamplifier" agc RC5513 2N2222 n CHANNEL 600w channel audio amp Class AB AMPLIFIER 4W 600w audio amp cross 2n2222
    Text: www.fairchildsemi.com RC5513 RAPPER Family – 4 Watt Stereo Sound Driver Features Applications • • • • • • • • • • • Multimedia PC motherboards and add-in sound cards • Companion chip to Sigma-Delta Sound Codecs • Sound Channel back-end in Set-top boxes


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    RC5513 DS30005513 600W TRANSISTOR AUDIO AMPLIFIER 600w CLASS D audio amplifier 2N2222 die "Microphone Preamplifier" agc RC5513 2N2222 n CHANNEL 600w channel audio amp Class AB AMPLIFIER 4W 600w audio amp cross 2n2222 PDF

    BA718

    Abstract: No abstract text available
    Text: Dual Operational Am plifiers I V V f llJ V V fl BA718 BA728 BA728F • 1M 1B Dimensions Unit: mm BA728 Features rm BA728F 8 7 I I I rm rm [ED LCD [ED 6 5 I I I 1 I 0.3 + 0 -' 1. Can operate on a single power supply. 2. Low power consum ption. 3. Pin configuration is identical to that


    OCR Scan
    BA718 BA728 BA728F BA718, BA728, BA728F BA4558. BA728 PDF

    MRF21030

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21030-1 Rev. 13, 10/2008 RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    MRF21030--1 MRF21030LSR3 MRF21030--1 MRF21030 PDF