2 A MOS FET Search Results

sla 1003

Abstract: SLA4031 SLA4061 13002a sma4033 SMA4032 SDH02 SMA5106
Contextual Info: 2-3 Transistor Arrays & MOS FET Arrays •With Built-in Flywheel Diode Number VCEO V Part No. of Circuits IC(A) VDSS(V) Chip ID(A) SDK02 hFE RDS(ON) (min) max(Ω) Fig. No. Package 2 MOS 0.24 SMD16Pin 1 3 MOS 0.25 SIP12Pin 2 SLA5031 5 MOS 0.3 SIP12Pin with fin

SMA4036

Abstract: SMA4033 SLA4061 sla4031 sla 1003 fly-wheel diode SMA4032 SMA5106 31002 13002a
Contextual Info: 2-3 Transistor Arrays & MOS FET Arrays •With Built-in Flywheel Diode Number VCEO V Part No. of Circuits IC(A) VDSS(V) Chip ID(A) SDK02 hFE RDS(ON) (min) max(Ω) Package Fig. No. 2 MOS 0.24 SMD16Pin 1 3 MOS 0.25 SIP12Pin 2 SLA5031 5 MOS 0.3 SIP12Pin with fin

TC-799

Abstract: NEC 2sk2134 nec 2134 2sk2134
Contextual Info: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.

transistor 13002

Abstract: 13002 TRANSISTOR SLA5094 sla5046 SLA5041 sla5054 SLA15Pin SLA5081 SLA5047 sla5021
Contextual Info: 2-3 Transistor Arrays & MOS FET Arrays 2-3-4 MOS Array for “S” shape Correction Switch of CRT Display Part No. Number VDSS ID of Circuits V (A) SLA5037 100 RDS(ON) Chip Package max(mΩ) Fig. No. 10 MOS 80 SIP12Pin with fin 10 MOS 85 SIP12Pin with fin

TKM2502Y

Abstract: FET n-ch 1 ohm
Contextual Info: Drain common dual Nch power MOS FET / TKM2502Y Page 1 of 2 New Drain common dual Nch power MOS FET TKM2502Y Description The TKM2502Y is a drain-common dual Nch power MOS-FET. Excellent resistor characteristics make it ideal for power management in 2-channel battery protection

Contextual Info: T O SH IB A TLP224G,TLP224G-2 TENTATIVE MODEMS TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP224G, TLP224G-2 PBX TELECOMMUNICATIONS The TOSHIBA TLP224G series consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a

marking ia

Abstract: uPA602T C10535E MEI-1202 PA602T PA603T
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as

2SK2414

Abstract: 2SK2414-Z IEI-1213 MEI-1202 MF-1134 TEA-1037 TC249
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

d1308

Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

Contextual Info: QS6J3 Transistors 2.5V Drive Pch+Pch MOS FET QS6J3 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.

13002 TRANSISTOR

Abstract: transistor 13002 SLA5077 SLA5047 SLA5041 SLA5037 SLA15Pin SLA5070 SLA5058
Contextual Info: 2-3 Transistor Arrays & MOS FET Arrays 2-3-4 MOS Array for “S” shape Collection Switch of CRT Display Part No. Number VDSS ID of Circuits V (A) SLA5037 100 SLA5047 SLA5052 150 4 SLA5077 RDS(ON) Chip Fig. No. Package max(Ω) 10 MOS 80 SIP12Pin with fin

ROHM QS6J1

Abstract: QS6J1
Contextual Info: QS6J1 Transistors 2.5V Drive Pch+Pch MOS FET QS6J1 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.

k1498

Abstract: 2SK1498 TEA-1035 2SK1497 MEI-1202 TEA1034
Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 4 9 7 /2 S K 1 4 9 8 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1497/2SK1498 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed for high voltage switching applications.

Contextual Info: G3VM-101BR/ER MOS FET Relays DIP Compact, General-purpose, Analog-switching MOS FET Relays, with 2-A Switching. • Continuous load current of 2 A. Connection C : 4 A • Switches minute analog signals. G3VM-101BR/ER • Dielectric strength of 2,500 Vrms between I/O.

TC-7831B

Abstract: 2335A 2SK680A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING The 2SK680A, N-channel vertical type MOS FET , is a switching PACKAGE DIMENSIONS Unit : mm device which can be driven directly by the output of ICs having a 5 V

Contextual Info: TO SH IBA TLP224GJLP224G-2 TOSHIBA PHOTOCOUPLER MODEMS GaAs IRED & PHOTO-MOS FET TLP224G, TLP224G-2 PBX Unit in mm TLP224G ^4 ir33 TELECOMMUNICATIONS The TOSHIBA TLP224G series consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a

Jab zener

Contextual Info: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)

C10535E

Abstract: MEI-1202 PA572T
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING The µPA572T is a super-mini-mold device provided with PACKAGE DIMENSIONS (in millimeters) two MOS FET circuits. It achieves high-density mounting 0.2 +0.1 –0

C10535E

Abstract: MEI-1202 PA502T PA503T 6 PIN case mos fet p-channel
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA503T P-CHANNEL MOS FET 5-PIN 2 CIRCUITS The µPA503T is a mini-mold device provided with PACKAGE DIMENSIONS (in millimeters) two MOS FET circuits. It achieves high-density mounting and saves mounting costs. +0.1

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts

uPA602T

Abstract: C10535E MEI-1202 PA602T PA603T 6 PIN case mos fet p-channel UPA603T
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA603T P-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA603T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and 2.8 ±0.2 FEATURES • Two MOS FET circuits in package the same size as

MEI-1202

Abstract: PA606T PA607T C10535E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA606T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING The µPA606T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET elements. It achieves high-density mounting 0.32 +0.1 –0.05

C10535E

Abstract: MEI-1202 PA606T PA607T 6 PIN case mos fet p-channel
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA607T P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING The µPA607T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET elements. It achieves high-density mounting +0.1 0.32 –0.05

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating