1YD TRANSISTOR Search Results
1YD TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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L8550QLT1G
Abstract: L8550PLT1G L8550RLT1G L8550SLT1G sot-23 1Yd L8550 L8550SLT1
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L8550PLT1G 3000/Tape L8550PLT3G 10000/Tape L8550QLT1G L8550QLT3G L8550RLT1G L8550QLT1G L8550PLT1G L8550RLT1G L8550SLT1G sot-23 1Yd L8550 L8550SLT1 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550PLT1G Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 Shipping Marking L8550PLT1G |
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L8550PLT1G 3000/Tape L8550PLT3G 10000/Tape L8550QLT1G L8550QLT3G L8550RLT1G | |
sot-23 1YdContextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. L8550PLT1G Series S-L8550PLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site |
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L8550PLT1G S-L8550PLT1G AEC-Q101 3000/Tape L8550PLT3G s-L8550PLT3G 10000/Tape L8550QLT1G sot-23 1Yd | |
sot-23 1YdContextual Info: M8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 800 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 15-Jul-10 M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) |
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M8550LT1 OT-23 15-Jul-10 80mAdc) sot-23 1Yd | |
sot-23 1Yd
Abstract: 8550 sot-23 pnp 8550QLT1
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OD-123+ FM120-M+ 8550xLT1 FM1200-M OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH sot-23 1Yd 8550 sot-23 pnp 8550QLT1 | |
ISTS105A
Abstract: transistor 1YD
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ISTS105A ISTS105A transistor 1YD | |
MOCD217Contextual Info: MOCD217 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD217 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package. |
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MOCD217 MOCD217 3750VRMS 10mAIF, 500VDC DC93134 | |
Contextual Info: IS357 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS Dimensions in mm DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. |
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IS357 IS357 75kVRMS PC357 IS357A IS357B IS357C IS357D 5x1010 DB92845 | |
IS357
Abstract: PC357 FPT1 CTR50-600 PC357 SHARP IS357A IS357B IS357C IS357D 1YD transistor
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IS357 IS357 75kVRMS PC357 IS357A IS357B IS357C IS357D 5x1010 DB92845 PC357 FPT1 CTR50-600 PC357 SHARP IS357A IS357B IS357C IS357D 1YD transistor | |
IS849
Abstract: 1000C 2600C
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IS849 IS849 16-pin DA92056-AAS/01 1000C 2600C | |
sot-23 1YdContextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550*LT1 COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SOT– 23 MAXIMUM RATINGS EACH DIODE Rating Collector-Emitter Voltage Symbol V CEO Collector-Base voltage Emitter-base Voltage Collector current-continuoun |
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L8550 OT-23 sot-23 1Yd | |
5000RMS
Abstract: IS829 1000C 2600C
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IS829 IS829 DA91098-AAS/01 5000RMS 1000C 2600C | |
TRANSISTOR c 5521
Abstract: is849 c 5521 c 5521 datasheet 2600C
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IS849 IS849 16-pin DA92056-AAS/01 TRANSISTOR c 5521 c 5521 c 5521 datasheet 2600C | |
transistor 1YD
Abstract: 1YD transistor TRANSISTOR c 5521 1000C 2600C IS829 236 8-pin ic
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IS829 IS829 DA91098-AAS/01 transistor 1YD 1YD transistor TRANSISTOR c 5521 1000C 2600C 236 8-pin ic | |
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IS3H4
Abstract: MARKING CODE 6408
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3750VRMS DC93157E IS3H4 MARKING CODE 6408 | |
TRANSISTOR c 5521
Abstract: 1000C 2600C ISQ204-77 1012 transistor
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ISQ204-77 ISQ204-77 16-pin 150mW DA92496-AAS/01 TRANSISTOR c 5521 1000C 2600C 1012 transistor | |
transistor 1YD
Abstract: 1000v 200w Transistor
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CNX82A -550C 1250C 1000C 2600C 33mW/0C DA-92286-AAS/01 transistor 1YD 1000v 200w Transistor | |
11AA4Contextual Info: H llA A l - H11AA4 tSOCOM AC INPUT COUPLED ISOLATOR Ga AS INFRARED EMITTING DIODE & NPN PHOTO-TRANSISTOR PACKAGEDEMENSIONSINCHES MM SCHEMATIC j 44_ .070 (1.78) Typ .100 (2.54) -M Typ -* j 1 *- 1 ! h u.140 (Ì.56)Min (si a t ^¡1/ o Q) (¿) (j .350 (8.89) |
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H11AA4 11AA4 H11AA3 H11AA1 H11AA2 500VDC) 100ft) 100i2) DA91043-AAS/01 | |
transistor 60 volt
Abstract: 1000C 2600C ISQ203
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ISQ203B ISQ203 16-pin 150mW DA92496-AAS/01 transistor 60 volt 1000C 2600C | |
transistor 1YD
Abstract: 1000v 200w Transistor CNX82A 1000C 2600C AAs Transistor 25KVDC 1YD transistor
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CNX82A -550C 1250C 1000C 2600C DA-92286-AAS/01 transistor 1YD 1000v 200w Transistor CNX82A 1000C 2600C AAs Transistor 25KVDC 1YD transistor | |
1000C
Abstract: 2600C
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ISQ203-11B 16-pin 150mW DA92495-AAS/01 1000C 2600C | |
IS654A
Abstract: IS655A
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IS654A IS655A DB92102-AAS/A2 IS654A IS655A | |
E91231
Abstract: MCT210
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MCT210 E91231 MCT210 DB91089-AAS/A2 E91231 | |
H24A4
Abstract: H24A1 H24A2 H24A3
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H24A1, H24A2 H24A3, H24A4 H24A1 75kVRMS 100pps DB92137-AAS/A2 H24A4 H24A1 H24A2 H24A3 |