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    1Y SOT23 Search Results

    1Y SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    1Y SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMBT3903

    Abstract: CMBT3904
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    PDF ISO/TS16949 OT-23 CMBT3903 CMBT3904 C-120 CMBT3903 CMBT3904

    BF821

    Abstract: BF823 transistors 10 KW
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    PDF OT-23 BF821 BF823 C-120 BF821 BF823 transistors 10 KW

    CMBT3903

    Abstract: CMBT3904 smd SA marking on IC
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    PDF OT-23 CMBT3903 CMBT3904 C-120 CMBT3903 CMBT3904 smd SA marking on IC

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    PDF OT-23 CMBT3903 CMBT3904 C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    PDF OT-23 BF821 BF823 C-120

    transistors 10 KW

    Abstract: BF821 BF823
    Text: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1


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    PDF OT-23 BF821 BF823 transistors 10 KW BF821 BF823

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


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    PDF STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72

    slla053

    Abstract: SN65LVD 1Z 116 available in india of mc3486 sn65lvds LVDT SN65LVDT32A SN65LVDS32A
    Text: T H E W O R L D Line Drivers and Receivers 2 ➤ Overview of LVDS standard 3 ➤ Common-mode voltage range 4 ➤ 8- and 16-channel line drivers and receivers I N D S P A N D A N A L O G MIXED-SIGNAL PRODUCT CATALOG this issue: See page 11 for details. Issue 1


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    PDF 16-channel OT23-5 TIA/EIA-485 AAP3008U. SLLM014 slla053 SN65LVD 1Z 116 available in india of mc3486 sn65lvds LVDT SN65LVDT32A SN65LVDS32A

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC2G06 www.ti.com SCES307H – AUGUST 2001 – REVISED AUGUST 2012 DUAL INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS Check for Samples: SN74LVC2G06 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation


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    PDF SN74LVC2G06 SCES307H 24-mA

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC2G06 www.ti.com SCES307H – AUGUST 2001 – REVISED AUGUST 2012 DUAL INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS Check for Samples: SN74LVC2G06 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation


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    PDF SN74LVC2G06 SCES307H 24-mA

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC2G04 DUAL INVERTER GATE www.ti.com SCES195K – APRIL 1999 – REVISED MARCH 2006 FEATURES • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


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    PDF SN74LVC2G04 SCES195K 24-mA 000-V A114udio

    Marking c9 SOT23-5

    Abstract: SN74LVC2G34-EP
    Text: SN74LVC2G34 DUAL BUFFER GATE www.ti.com SCES359H – AUGUST 2001 – REVISED FEBRUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 4.1 ns at 3.3 V


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    PDF SN74LVC2G34 SCES359H 24-mA 000-V A114-A) Marking c9 SOT23-5 SN74LVC2G34-EP

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC2G34 DUAL BUFFER GATE www.ti.com SCES359H – AUGUST 2001 – REVISED FEBRUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 4.1 ns at 3.3 V


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    PDF SN74LVC2G34 SCES359H 24-mA 000-V A114-A) A115-A)

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC2G34 DUAL BUFFER GATE www.ti.com SCES359G – AUGUST 2001 – REVISED MAY 2006 FEATURES • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


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    PDF SN74LVC2G34 SCES359G 24-mA 000-V A114-A) A115-A)

    Untitled

    Abstract: No abstract text available
    Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481


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    PDF MMBT2369 BC818-16 BC818-25 BC818-40 BC848A BC848B BC848C BCW31 BCW32 BCW33

    Untitled

    Abstract: No abstract text available
    Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA


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    PDF 350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA

    BT5401

    Abstract: No abstract text available
    Text: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C


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    PDF 500pcs, BF840 BF841 BT918 BT5089 BT5088 BC850B C850C BT2484 SR19A BT5401

    74V1T86

    Abstract: No abstract text available
    Text: 74V1T86 SINGLE EXCLUSIVE OR GATE . HIGH SPEED: tpD =5 ns TYP. at Vcc =5V . LOW POWER DISSIPATION: Icc = 1 |oA (MAX.) at Ta = 25 °C . COMPATIBLE WITH TTL OUTPUTS: Vih = 2V (MIN), V il = 0.8V(MAX) . POWERDOWN PROTECTION ON INPUTS & OUTPUT . SYMMETRICAL OUTPUT IMPEDANCE:


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    PDF 74V1T86 74V1T86 SC-70

    74V1G86

    Abstract: No abstract text available
    Text: 74V1G86 SINGLE EXCLUSIVE OR GATE . HIGH SPEED: tpD = 4.8 ns TYP. at Vcc = 5V . LOW POWER DISSIPATION: Icc = 1 |oA (MAX.) at T a = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 28% V cc (MIN.) . POWERDOWN PROTECTION ON INPUTS . SYMMETRICAL OUTPUT IMPEDANCE:


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    PDF 74V1G86 SC-70) OT23-5L) 1G86S 74V1G86C 74V1G86 SC-70

    transistor marking 1y

    Abstract: HB573
    Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    PDF KST3903/3904 OT-23 KST3903 KST3904 transistor marking 1y HB573

    74V1T126

    Abstract: 1y a1 74V1T126C 74V1T126S
    Text: 74V1T126 SINGLE BUS BUFFER 3-STATE PR ELIM IN ARY DATA . HIGH SPEED: tpD = 3.8 ns (TYP.) at Vcc = 5V . LOW POWER DISSIPATION: Icc = 1 |oA (MAX.) at Ta = 25 °C . COMPATIBLE WITH TTL OUTPUTS: V ih = 2V (MIN), V il = 0.8V(MAX) . POWERDOWN PROTECTION ON INPUT


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    PDF 74V1T126 74V1T126 OT23-5L) SC-70) 74V1T126S 74V1T126C OT23-5L SC-70 1y a1 74V1T126C

    74V1T86

    Abstract: No abstract text available
    Text: 74V1T86 SINGLE EXCLUSIVE OR GATE . HIGH SPEED: tpD =5 ns TYP. at Vcc = 5V . LOW POWER DISSIPATION: lcc = 1 |aA (MAX.) at Ta = 25 °C . COMPATIBLE WITH TT1_ OUTPUTS: Vih = 2V (MIN), V il = 0.8V (MAX) . POWERDOWN PROTECTION ON INPUTS & OUTPUT . SYMMETRICAL OUTPUT IMPEDANCE:


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    PDF 74V1T86 74V1T86

    74V1G04

    Abstract: No abstract text available
    Text: rz T ^7# SGS-THOMSON 74V1G04 SINGLE INVERTER PRELIMINARY DATA . HIGH SPEED: tPD = 3.8 ns TYP. a t Vcc = 5V . LOW POWER DISSIPATION: Ice = 1 (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 28% V cc (MIN.) . POWER DOWN PROTECTION ON INPUTS . SYMMETRICAL OUTPUT IMPEDANCE:


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    PDF 74V1G04 OT23-5L) 74V1G04S 74V1G04

    74V1G125

    Abstract: 74V1G126
    Text: 74V1G126 SINGLE BUS BUFFER 3-STATE PRELIMINARY DATA . HIGH SPEED: tpD = 3 .8 ns (TYP.) at Vcc = 5V . LOW POWER DISSIPATION: Icc = 1 |oA (MAX.) at T a = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 2 8 % Vcc (MIN.) . POWERDOWN PROTECTION ON INPUTS . SYMMETRICAL OUTPUT IMPEDANCE:


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    PDF 74V1G126 74V1G125 SC-70 74V1G126