1X322 Search Results

Contextual Info: IB M 1 1 M 8 8 4 5 H B 8M x 72 Chipkill Correct DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 8Mx72 Chipkill Correct EDO DIMM -Buffered inputs except RAS, Data

Contextual Info: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency

Contextual Info: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs

Contextual Info: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM

Contextual Info: IBM11M1640L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: -Buffered inputs except RAS, Data -Reduced noise (32 VSsA /cc P^s)

Contextual Info: IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • 16Mx72 Extended Data Out EDO Mode DIMMs • System Performance Benefits: - Buffered inputs (except RAS, Data)

1X359

Contextual Info: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address

A0201

Contextual Info: Ordering n u m b e r : E N jK 5 0 8 4 CMOS LSI LC322270J, M-80 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write s,< o.v Preliminary .i#'' Overview Package Dimensions The LC32227GJ, M is a CMOS dynamic RAM operating unit: mm on a single 5 V power source and having a 131072 words

Contextual Info: IBM11M4735C IBM11M4735CB 4M x 72 D RAM M O D U LE Features • Optimized for ECC applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx72 Extended Data Out Page Mode DIMM • Performance: -50 !

Contextual Info: IBM13N2649JC IBM13N2739JC Preliminary 2M X 64/72 1 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency jfcK I Clock Frequency

12864-J

Contextual Info: IBM11M32845CB PRELIMINARY 32M x 72 Chipkill Correct DRAM Module Features • 168-Pin JEDEC Standard, 8-Byte Dual In-line Memory Module • 32M x 72 Dual Bank Chipkill Correct EDO DIMM • Performance: ; R A S A c c e s s T im e J ; C A S A c c e s s T im e

Contextual Info: IBM11N8645H IBM11N8735H 8M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Mode DIMMs System Performance Benefits:

Contextual Info: b^ TTffllC AN6366NK, AN6366NS AN6366NK, AN6366NS V T R f e f i- ^ - M S I lliK N T S C ^ iO /^ V T R C o lo r C irc u its S ig n a l f o r P rc e s s in g N T S C S y s te m - 8 Unit : mm AN6366NK A N 6366N K , A N 6 3 6 6 N S !i, M N 6163Afc 6r> iH .* -ft,b -ti:T "V T R W

Contextual Info: IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • Optimized for ECC applications • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s)

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 VSs/V cc P^s)

Contextual Info: IBM11M8730HB 8M x 72 DRAM MODULE Features • Optimized for ECC applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 8Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 VSs/Vcc P^s)

ABB AO2020

Abstract: AO2020 AO201 ACMI LC322270J
Contextual Info: O rd e rin g n u m b e r : E N jK 5 0 8 4 CMOS LSI LC322270J, M-80 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write s,< o.v Preliminary .i#'' Overview Package Dimensions The LC32227GJ, M is a CMOS dynamic RAM operating unit: mm on a single 5 V power source and having a 131072 words

Contextual Info: IB M 1 1 M 4 7 3 5 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank EDO Mode DIMM • System Performance Benefits: • Performance: -Buffered inputs (except RAS, Data)

Contextual Info: IBM11N8645H IBM11N8735H 8M x 64/72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs System Performance Benefits:

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Abstract: 43CAS 1x32 IX328 1x39
Contextual Info: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64, 16Mx72 Extended Data Out Page Mode DIMMs |.-50.|.-60.| t:;Ac i RAS Access Tim e