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    1SV322 Price and Stock

    Toshiba America Electronic Components 1SV322(TPH3,F)

    DIODE VARACTOR 10V USC
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    DigiKey 1SV322(TPH3,F) Reel 3,000
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    1SV322(TPH3,F) Digi-Reel 1
    • 1 $0.42
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    1SV322(TPH3,F) Cut Tape 1
    • 1 $0.42
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    Mouser Electronics 1SV322(TPH3,F) 3,583
    • 1 $0.42
    • 10 $0.261
    • 100 $0.147
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    Verical 1SV322(TPH3,F) 2,953 178
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    Chip1Stop 1SV322(TPH3,F) Cut Tape 2,953
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    • 10 $0.403
    • 100 $0.141
    • 1000 $0.0998
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    Toshiba America Electronic Components 1SV322TPH3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SV322TPH3 2,400
    • 1 $0.8
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    1SV322 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV322 Kexin Variable Capacitance Diode (TCXO/VCO) Original PDF
    1SV322 Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Application Scope: VCXO Original PDF
    1SV322 TY Semiconductor Variable Capacitance Diode (TCXO/VCO) - SOD-323 Original PDF
    1SV322 Toshiba Diode Silicon Epitaxial Planer Type Scan PDF
    1SV322 Toshiba Scan PDF
    1SV322 Toshiba Scan PDF
    1SV322TPH3 Toshiba 1SV322TPH3 - Diode VAR Cap Single 10V 26.5pF 2-Pin USC T/R Original PDF
    1SV322(TPH3,F) Toshiba 1SV322 - DIODE VARACTOR 10V 1-1E1A Original PDF
    1SV322TPH3F Toshiba 1SV322TPH3F - Diode VAR Cap Single 10V 26.5pF 2-Pin USC T/R Original PDF

    1SV322 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		1SV322 PDF

    1SV322

    Abstract: 1-1e1a
    Text: 1SV322 東芝ダイオード シリコンエピタキシャルプレーナ形 1SV322 ○ TCXO/VCO 用 • 容量比が大きい。 単位: mm : C1 V/C4 V = 4.3 標準 • 直列抵抗が小さい。 : rs = 0.4 Ω (標準) • 2 端子小型外囲器なので､セットの小型化に適しています。


    Original     		1SV322 1SV322 1-1e1a PDF

    1SV322

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		1SV322 1SV322 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV322 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=4.3 Typ. Low Series Resistance:rs=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Useful for Small Size Tuner


    Original     		1SV322 OD-323 PDF

    smd transistor marking 26

    Abstract: 1SV322 Marking V7
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV322 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=4.3 Typ. Low Series Resistance:rs=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02


    Original     		1SV322 OD-323 smd transistor marking 26 1SV322 Marking V7 PDF

    1SV322

    Abstract: No abstract text available
    Text: 20010110 1SV322 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1 ～ 4V Ta = 27℃ AMBIENT TEMPERATURE:


    Original     		1SV322 668E-15 00E-04 787E-11 00E-09 PDF

    1SV322

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		1SV322 1SV322 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		1SV322 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN PDF

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


    Original     		BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 PDF

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


    Original     		BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz PDF

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


    Original     		BCE0003H 3sk catalog TE85L Toshiba PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA 1 S V3 2 2 TOSHIBA DIODE T C X O /V C O • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C i V /C 4V = 4.3 Typ. : rs = 0.4 O (Typ.) Low Series Resistance Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV322 500mVrms PDF

    1SV322

    Abstract: No abstract text available
    Text: 1SV322 TOSHIBA 1 S V3 2 2 TOSHIBA DIODE T C X O /V C O • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C i V /C 4V = 4.3 Typ. : rs = 0.4 O (Typ.) Low Series Resistance Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV322 1SV322 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 1SV322 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 2 2 TCXO/VCO Unit in mm • High Capacitance Ratio : C 1V /C 4V = 4.3 Typ. • Low Series Resistance : rs = 0.4 fl (Typ.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV322 PDF

    1SV322

    Abstract: No abstract text available
    Text: TO SH IBA 1SV322 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 2 2 TCXO/VCO Unit in mm • High Capacitance Ratio : C 1V /C 4V = 4.3 Typ. • Low Series Resistance : rs = 0.4 fl (Typ.) • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SV322 1SV322 PDF