1SV281 Search Results

1SV281

Contextual Info: 20010110 1SV281 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4V Ta = 27℃

1SV281

Contextual Info: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)

1SV281

Abstract: 303E toshiba 27c
Contextual Info: 1SV281 TOSHIBA TO S H IB A V AR IA B LE CAPACITAN CE DIODE SILICON EPITAX IAL P LAN AR TYPE 1 SV281 VCO FOR V / U H F B A N D R AD IO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner.

diode e 1210

Contextual Info: 1SV281 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : Ci v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

1SV281

Contextual Info: 1SV281 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV281 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.0 標準 • 直列抵抗が小さい。 : rs = 0.28 Ω (標準) • 2 端子小型外囲器なので､セットの小型化に適しています。

diode marking 4Y

Contextual Info: TOSHIBA 1SV281 1 SV28 1 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR V /U H F BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.0 TYP. • Low Series Resistance : rs = 0.280 (TYP.) • Useful for Small Size Tuner.

1SV281

Contextual Info: TOSHIBA 1SV281 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 Unit in mm VCO FOR V /U H F BAND RADIO • High Capacitance Ratio : C iy /C 4Y = 2.0 TYP. • Low Series Resistance : rs = 0.280 (TYP.) • Useful for Small Size Tuner.

1SV281

Contextual Info: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)

Contextual Info: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)

Contextual Info: TO SHIBA 1SV281 1 SV281 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR V /U H F BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 TYP. Low Series Resistance : rs = 0.28H (TYP.) Useful for Small Size Tuner.

1SV281

Contextual Info: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner. Maximum Ratings (Ta = 25°C)

1SV281

Contextual Info: TOSHIBA 1SV281 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 VCO FOR V / U H F BAND RADIO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SV281 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 VCO FOR V /U H F BAND RADIO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

1SV281

Contextual Info: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,