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    1SV281 Search Results

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    1SV281 Price and Stock

    Toshiba America Electronic Components 1SV281(TPH3,F)

    DIODE VCO V/UHF 10V ESC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SV281(TPH3,F) Digi-Reel 18,230 1
    • 1 $0.42
    • 10 $0.259
    • 100 $0.42
    • 1000 $0.10883
    • 10000 $0.09753
    Buy Now
    1SV281(TPH3,F) Cut Tape 18,230 1
    • 1 $0.42
    • 10 $0.259
    • 100 $0.42
    • 1000 $0.10883
    • 10000 $0.09753
    Buy Now
    1SV281(TPH3,F) Reel 16,000 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.08
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    Mouser Electronics 1SV281(TPH3,F) 16,238
    • 1 $0.35
    • 10 $0.229
    • 100 $0.15
    • 1000 $0.087
    • 10000 $0.071
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    Verical 1SV281(TPH3,F) 8,000 8,000
    • 1 -
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    • 10000 $0.0424
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    1SV281(TPH3,F) 3,900 257
    • 1 -
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    • 1000 $0.1044
    • 10000 $0.1044
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    Arrow Electronics 1SV281(TPH3,F) 8,000 20 Weeks 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.042
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    Newark 1SV281(TPH3,F) Cut Tape 13,670 5
    • 1 $0.416
    • 10 $0.293
    • 100 $0.131
    • 1000 $0.092
    • 10000 $0.092
    Buy Now
    Chip1Stop 1SV281(TPH3,F) Cut Tape 3,900
    • 1 -
    • 10 $0.252
    • 100 $0.122
    • 1000 $0.0911
    • 10000 $0.0849
    Buy Now
    EBV Elektronik 1SV281(TPH3,F) 21 Weeks 4,000
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    Toshiba America Electronic Components 1SV281TPH3F

    Diode VAR Cap Single 10V 15pF 2-Pin ESC T/R - Tape and Reel (Alt: 1SV281(TPH3,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SV281TPH3F Reel 20 Weeks 4,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.0745
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    Avnet Asia 1SV281TPH3F 24 Weeks 4,000
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    1SV281 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV281 Toshiba variable capacitance diode Original PDF
    1SV281 Toshiba Variable capacitance silicon diode, used as VCO for V/UHF band radio Scan PDF
    1SV281 Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1G1A) Scan PDF
    1SV281 Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type Scan PDF
    1SV281(TH3,F,T) Toshiba 1SV281 - DIODE VARACTOR 10V 1-1G1A Original PDF
    1SV281TH3FT Toshiba 1SV281 - Varactor Diodes 10V C1=15-17pF Original PDF
    1SV281TH3T Toshiba 1SV281TH3T - Diode VAR Cap Single 10V 15pF 2-Pin ESC T/R Original PDF
    1SV281TPH3 Toshiba 1SV281TPH3 - Diode VAR Cap Single 10V 15pF 2-Pin ESC T/R Original PDF
    1SV281(TPH3) Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1G1A) T/R Scan PDF
    1SV281(TPH3,F) Toshiba 1SV281 - DIODE VCO V/UHF 10V 1-1G1A Original PDF

    1SV281 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SV281

    Abstract: No abstract text available
    Text: 20010110 1SV281 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 1V ~ 4V Ta = 27℃


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    PDF 1SV281 929E-16 00E-04 303E-11 00E-10

    1SV281

    Abstract: No abstract text available
    Text: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 1SV281 1SV281

    1SV281

    Abstract: No abstract text available
    Text: 1SV281 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV281 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.0 標準 • 直列抵抗が小さい。 : rs = 0.28 Ω (標準) • 2 端子小型外囲器なので、セットの小型化に適しています。


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    PDF 1SV281 1SV281

    1SV281

    Abstract: No abstract text available
    Text: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)


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    PDF 1SV281 1SV281

    Untitled

    Abstract: No abstract text available
    Text: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)


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    PDF 1SV281

    1SV281

    Abstract: No abstract text available
    Text: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner. Maximum Ratings (Ta = 25°C)


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    PDF 1SV281 1SV281

    1SV281

    Abstract: No abstract text available
    Text: 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 1SV281 1SV281

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


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    PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


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    PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


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    PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    1SV281

    Abstract: 303E toshiba 27c
    Text: 1SV281 TOSHIBA TO S H IB A V AR IA B LE CAPACITAN CE DIODE SILICON EPITAX IAL P LAN AR TYPE 1 SV281 VCO FOR V / U H F B A N D R AD IO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner.


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    PDF 1SV281 0014g 1SV281 303E toshiba 27c

    diode e 1210

    Abstract: No abstract text available
    Text: 1SV281 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : Ci v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV281 SV281 0014g 470MHz diode e 1210

    diode marking 4Y

    Abstract: No abstract text available
    Text: TOSHIBA 1SV281 1 SV28 1 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR V /U H F BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.0 TYP. • Low Series Resistance : rs = 0.280 (TYP.) • Useful for Small Size Tuner.


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    PDF 1SV281 0014g diode marking 4Y

    1SV281

    Abstract: No abstract text available
    Text: TOSHIBA 1SV281 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 Unit in mm VCO FOR V /U H F BAND RADIO • High Capacitance Ratio : C iy /C 4Y = 2.0 TYP. • Low Series Resistance : rs = 0.280 (TYP.) • Useful for Small Size Tuner.


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    PDF 1SV281 0014g 470MHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SV281 1 SV281 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR V /U H F BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 TYP. Low Series Resistance : rs = 0.28H (TYP.) Useful for Small Size Tuner.


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    PDF 1SV281 SV281 0014g

    1SV281

    Abstract: No abstract text available
    Text: TOSHIBA 1SV281 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 VCO FOR V / U H F BAND RADIO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SV281 0014g 1SV281

    Untitled

    Abstract: No abstract text available
    Text: 1SV281 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV281 VCO FOR V /U H F BAND RADIO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV281 SV281 0014g 10IBA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV281 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 Unit in mm VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : C iy /C 4 v = 2.0 TYP. Low Series Resistance : r$ = 0.28il (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV281 0014g