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    1SS385F Search Results

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    1SS385F Price and Stock

    Toshiba America Electronic Components 1SS385FV,L3F

    DIODE SCHOTTKY 10V 100MAVESM
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    DigiKey 1SS385FV,L3F Digi-Reel 5,245 1
    • 1 $0.18
    • 10 $0.112
    • 100 $0.18
    • 1000 $0.04276
    • 10000 $0.04223
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    1SS385FV,L3F Reel 8,000
    • 1 -
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    • 10000 $0.0303
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    Avnet Americas 1SS385FV,L3F Reel 12 Weeks 8,000
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    • 10000 $0.02754
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    Mouser Electronics 1SS385FV,L3F 9,268
    • 1 $0.18
    • 10 $0.112
    • 100 $0.061
    • 1000 $0.043
    • 10000 $0.026
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    TTI 1SS385FV,L3F Reel 8,000
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    • 10000 $0.0257
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    Toshiba America Electronic Components 1SS385FV,L3F(T

    Diode Small Signal Schottky 15V 0.1A 3-Pin VESM T/R
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    Verical 1SS385FV,L3F(T 6,700 673
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    • 1000 $0.0411
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    Chip One Stop 1SS385FV,L3F(T Cut Tape 6,700 0 Weeks, 1 Days 25
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    • 100 $0.0439
    • 1000 $0.0411
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    Toshiba America Electronic Components 1SS385FV,L3F(B

    1SS385FV,L3F(B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS385FV,L3F(B 6,473 642
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    • 1000 $0.114
    • 10000 $0.1077
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    Quest Components 1SS385FV,L3F(B 5,178
    • 1 $0.63
    • 10 $0.63
    • 100 $0.63
    • 1000 $0.189
    • 10000 $0.126
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    Toshiba America Electronic Components 1SS385F

    0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS385F 13,300
    • 1 $0.12
    • 10 $0.12
    • 100 $0.12
    • 1000 $0.054
    • 10000 $0.039
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    1SS385F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS385F Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS385(F) Unknown Silicon Diode Scan PDF
    1SS385FV Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS385FV,L3F Toshiba America Electronic Components SMALL-SIGNAL SCHOTTKY BARRIER DI Original PDF

    1SS385F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		1SS385F 1SS385F PDF

    VR101

    Abstract: 1SS385FV
    Text: 1SS385FV 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS385FV ○ 高速スイッチング用 単位: mm 0.22±0.05 電 電 圧 VRM 15 V 圧 VR 10 V せ ん 頭 順 電 流 IFM 200* mA 平 均 整 流 電 流 IO 100*


    Original     		1SS385FV 100mA VR101 1SS385FV PDF

    1SS385FV

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR


    Original     		1SS385FV 1SS385FV PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		1SS385F 100mA PDF

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm Low forward voltage: VF = 0.23V typ. @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		1SS385F 1SS385F PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR


    Original     		1SS385FV PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum peak forward current IFM 200 * mA Average forward current IO 100 * mA IFSM


    Original     		1SS385FV PDF

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		1SS385F 1SS385F PDF

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit in mm Low forward voltage: VF = 0.23V typ. @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		1SS385F 1SS385F PDF

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		1SS385F 1SS385F PDF

    1SS385FV

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm Ultra-small package 1.2±0.05 0.32±0.05 Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 0.8±0.05 Rating 0.4 Unit VRM 15 V Reverse voltage


    Original     		1SS385FV 1SS385FV PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 <; <; 3 » R F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA • Ultra-Small Package 0.85 ±0.1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS385F PDF

    xl marking

    Abstract: 1SS385F
    Text: TOSHIBA 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F Unit in mm HIGH SPEED SWITCHING 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vjr = 0.23 V Typ. @Ijr = 5 mA Ultra-Small Package M A X IM U M RATINGS (Ta = 25°C) RATING UNIT


    OCR Scan     		1SS385F xl marking 1SS385F PDF

    7N09

    Abstract: No abstract text available
    Text: 1SS385F T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA Ultra-Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SS385F 7N09 PDF