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    1SS37 Search Results

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    1SS37 Price and Stock

    Rochester Electronics LLC 1SS375-TL-E

    RF DIODE SCHOTTKY 10V 35MA 3MCP
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    DigiKey 1SS375-TL-E Bulk 193,960 2,049
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    Toshiba America Electronic Components 1SS378(TE85L,F)

    DIODE ARR SCHOTT 10V 100MA SC-70
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    DigiKey 1SS378(TE85L,F) Digi-Reel 47,098 1
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    1SS378(TE85L,F) Cut Tape 47,098 1
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    1SS378(TE85L,F) Reel 42,000 3,000
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    Mouser Electronics 1SS378(TE85L,F) 8,435
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    Verical 1SS378(TE85L,F) 3,000 424
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    1SS378(TE85L,F) 1,734 432
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    Quest Components 1SS378(TE85L,F) 3,587
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    1SS378(TE85L,F) 3,587
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    Chip One Stop 1SS378(TE85L,F) Cut Tape 3,000 0 Weeks, 1 Days 10
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    Toshiba America Electronic Components 1SS379,LF

    DIODE ARRAY GP 80V 100MA SC-59
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    DigiKey 1SS379,LF Digi-Reel 26,241 1
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    1SS379,LF Cut Tape 26,241 1
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    1SS379,LF Reel 24,000 3,000
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    Mouser Electronics 1SS379,LF 21,120
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    Toshiba America Electronic Components 1SS374(TE85L,F)

    DIODE ARR SCHOTT 10V 100MA SC-59
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    DigiKey 1SS374(TE85L,F) Cut Tape 19,693 1
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    1SS374(TE85L,F) Digi-Reel 19,693 1
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    1SS374(TE85L,F) Reel 18,000 3,000
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    Mouser Electronics 1SS374(TE85L,F) 8,982
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    Verical 1SS374(TE85L,F) 6,000 709
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    1SS374(TE85L,F) 1,635 926
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    Quest Components 1SS374(TE85L,F) 1,308
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    Chip One Stop 1SS374(TE85L,F) Cut Tape 6,000 0 Weeks, 1 Days 25
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    Toshiba America Electronic Components 1SS372(TE85L,F)

    DIODE SCHOTTKY 10V 100MA USM
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    DigiKey 1SS372(TE85L,F) Digi-Reel 8,755 1
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    1SS372(TE85L,F) Cut Tape 8,755 1
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    1SS372(TE85L,F) Reel 6,000 3,000
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    Avnet Americas 1SS372(TE85L,F) Reel 16 Weeks 3,000
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    Mouser Electronics 1SS372(TE85L,F) 15,081
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    Quest Components 1SS372(TE85L,F) 7,325
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    TTI 1SS372(TE85L,F) Reel 3,000
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    Avnet Asia 1SS372(TE85L,F) 24 Weeks 3,000
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    Chip One Stop 1SS372(TE85L,F) Cut Tape 20,933 0 Weeks, 1 Days 5
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    1SS37 Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS370 Kexin Silicon Epitaxial Planar Type Original PDF
    1SS370 Toshiba Japanese - Diodes Original PDF
    1SS370 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS370 Transys Electronics Plastic-Encapsulated Diode Original PDF
    1SS370 TY Semiconductor Silicon Epitaxial Planar Type - SOT-23 Original PDF
    1SS370 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS370 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS370TE85LF Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW 200V 100MA USM Original PDF
    1SS371 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS371 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SS372 Galaxy Semi-Conductor Holdings Schottky Barrier Diode Original PDF
    1SS372 Kexin High Speed Switching Diode Original PDF
    1SS372 Toshiba Japanese - Diodes Original PDF
    1SS372 Toshiba shottky barrier diode Original PDF
    1SS372 TY Semiconductor Silicon Epitaxial Schottky Barrier Diode - SOT-323 Original PDF
    1SS372 TY Semiconductor High Speed Switching Diode - SOT-323 Original PDF
    1SS372 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS372 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS372 Toshiba DIODE Scan PDF
    1SS372(TE85L,F) Toshiba America Electronic Components SMALL-SIGNAL SCHOTTKY BARRIER DI Original PDF

    1SS37 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1SS379

    Abstract: 0-110A
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)


    Original
    1SS379 OT-23 100mA 1SS379 0-110A PDF

    "UHF DETECTOR"

    Abstract: No abstract text available
    Text: Ordering number:EN4690 _ 1SS375 No.4690 Schottky B arrier Diode SANYO i VHF, UHF detector and Mixer Applications F e a tu re s •Series connection of 2 elem ents in a very sm all-sized package facilitates high-density m ounting and perm its lSS375-applied equipm ent to be made sm aller.


    OCR Scan
    EN4690 1SS375 lSS375-applied "UHF DETECTOR" PDF

    Untitled

    Abstract: No abstract text available
    Text: Diodes High–voltage band switching diode 1SS376 FApplications High voltage switching FExternal dimensions Units: mm FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăPeak reverse voltage guaranteed at 300V with this size. FConstruction


    Original
    1SS376 PDF

    Diodes smd marking f5 reverse voltage

    Abstract: MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370
    Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage


    Original
    1SS370 OT-23 Diodes smd marking f5 reverse voltage MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370 PDF

    1SS377

    Abstract: marking O9
    Text: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original
    1SS377 OT-23 Te200* 1SS377 marking O9 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V


    Original
    1SS377 SC-59 O-236MOD PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS374 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original
    1SS374 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM


    Original
    1SS372 PDF

    1SS373

    Abstract: No abstract text available
    Text: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS373 1SS373 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS370 1 SS370 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 Vf 2 = 0.9V (TYP.)


    OCR Scan
    1SS370 SS370 SC-70 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm l Low forward voltage : VF = 0.23V typ. @IF = 5mA l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS378 SC-70 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications l Low forward voltage : VF = 1.0V typ. l Low reverse current : IR = 0.1nA (typ.) l Small total capacitance : CT = 3.0pF (typ.) l Small package : SC-59 Unit in mm


    Original
    1SS379 SC-59 O-236MOD 100mA PDF

    schottky marking code PD

    Abstract: No abstract text available
    Text: 1SS372W SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching 3 1 2 Marking Code: ME Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current


    Original
    1SS372W schottky marking code PD PDF

    1SS370

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE 1. ANODE 2. N.C. FEATURES z Small surface mounting type z High Speed z High reliability with high surge current handing capability 3. CATHODE


    Original
    OT-323 OT-323 1SS370 100mA 1SS370 PDF

    1SS376

    Abstract: band switching diode 300V switching transistor
    Text: Diodes High–voltage band switching diode 1SS376 FExternal dimensions Units: mm Switching diodes FApplications High voltage switching High–voltage switching diodes FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăReak reverse voltage guaranteed at 300V with this


    Original
    1SS376 1SS376 band switching diode 300V switching transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS372 PDF

    marking code RB

    Abstract: rb marking code 1SS373WT
    Text: 1SS373WT SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 RB Top View Marking Code: "RB" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original
    1SS373WT OD-523 OD-523 marking code RB rb marking code 1SS373WT PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original
    1SS378 SC-70 PDF

    1SS377

    Abstract: No abstract text available
    Text: 1SS377 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS377 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA


    Original
    1SS377 236MOD 100mA 1SS377 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


    Original
    1SS372 SC-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications z Small package : SC-59 z Low forward voltage : VF = 1.0V typ. z Low reverse current : IR = 0.1nA (typ.) z Small total capacitance : CT = 3.0pF (typ.) Unit: mm


    Original
    1SS379 SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS373 PDF

    diode sy 180 10

    Abstract: 1ss373
    Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol


    Original
    1SS373 OD-323 OD-323 diode sy 180 10 1ss373 PDF

    smd transistor fh

    Abstract: UHF DETECTOR 1SS375
    Text: Diodes SMD Type VHF,UHF Detector and Mixer Applications 1SS375 Features Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS375-applied equipment to be made smaller. Small interterminal capacitance.


    Original
    1SS375 1SS375-applied smd transistor fh UHF DETECTOR 1SS375 PDF