1SS352 EQUIVALENT Search Results

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2

2SC4738

Abstract: HN2E02F 1SS352 HN2E02
Contextual Info: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance

1SS352 equivalent

Abstract: 1SS352 2SC4666 HN2E01F
Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.)

2SC4738

Abstract: HN2E02F 1SS352
Contextual Info: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance

1SS352 equivalent

Contextual Info: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Unit: mm Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance

Contextual Info: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity

1SS352

Abstract: 2SA1587 HN2E04F
Contextual Info: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity

Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)

1SS352 equivalent

Abstract: 1SS352 HN2E05J RN2104F
Contextual Info: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Unit: mm Super High Speed Switching Application Interface Circuit Driver Circuit Applications Q1 Since bias resistor is built in the transistor, the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of

Contextual Info: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Unit: mm Super High Speed Switching Application Inverter Circuit ,Interface Circuit and Driver Circuit Applications Q1 Since bias resistance is built in the transistor,the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of an

Contextual Info: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Super High Speed Switching Application Interface Circuit Driver Circuit Applications Unit: mm Q1 Since bias resistor is built in the transistor, the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of

Contextual Info: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Unit: mm Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity

Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)

HN2E02F

Abstract: 1SS352 2SC4738
Contextual Info: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.) Low Total Capacitance

Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)

1SS352

Abstract: 2SA1587 HN2E04F
Contextual Info: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Unit: mm Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity

5252 0.9V 1.5V led driver

Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT
Contextual Info: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs