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    1SS3 Search Results

    1SS3 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    1SS387 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation
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    1SS3 Price and Stock

    ROHM Semiconductor 1SS390SMT2R

    RF DIODE PIN 35V EMD2
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    DigiKey 1SS390SMT2R Digi-Reel 18,025 1
    • 1 $0.43
    • 10 $0.236
    • 100 $0.43
    • 1000 $0.10466
    • 10000 $0.10359
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    1SS390SMT2R Cut Tape 18,025 1
    • 1 $0.43
    • 10 $0.236
    • 100 $0.43
    • 1000 $0.10466
    • 10000 $0.10359
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    TME 1SS390SMT2R 1
    • 1 $0.1692
    • 10 $0.1098
    • 100 $0.0753
    • 1000 $0.0596
    • 10000 $0.053
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    Avnet Asia 1SS390SMT2R 24 Weeks 8,000
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    Avnet Silica 1SS390SMT2R 15 Weeks 8,000
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    CoreStaff Co Ltd 1SS390SMT2R 3,590
    • 1 $0.116
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    • 100 $0.102
    • 1000 $0.049
    • 10000 $0.045
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    Vyrian 1SS390SMT2R 8,128
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    Toshiba America Electronic Components 1SS396,LF

    DIODE ARR SCHOTT 40V 70MA S-MINI
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    DigiKey 1SS396,LF Digi-Reel 13,537 1
    • 1 $0.22
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    • 100 $0.22
    • 1000 $0.077
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    1SS396,LF Cut Tape 13,537 1
    • 1 $0.22
    • 10 $0.128
    • 100 $0.22
    • 1000 $0.077
    • 10000 $0.077
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    1SS396,LF Reel 6,000 3,000
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    • 10000 $0.05151
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    Verical 1SS396,LF 5,746 131
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    • 1000 $0.0295
    • 10000 $0.0173
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    Arrow Electronics 1SS396,LF Cut Strips 5,746 16 Weeks 1
    • 1 $0.0946
    • 10 $0.055
    • 100 $0.0395
    • 1000 $0.0295
    • 10000 $0.0173
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    Taiwan Semiconductor 1SS355-R9G

    SOD-323F, 90V, 0.25A, SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS355-R9G Cut Tape 8,870 1
    • 1 $0.19
    • 10 $0.115
    • 100 $0.19
    • 1000 $0.04546
    • 10000 $0.03442
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    1SS355-R9G Digi-Reel 8,870 1
    • 1 $0.19
    • 10 $0.115
    • 100 $0.19
    • 1000 $0.04546
    • 10000 $0.03442
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    onsemi 1SS351-TB-E

    RF DIODE SCHOTTKY 5V 3CP
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    DigiKey 1SS351-TB-E Cut Tape 5,055 1
    • 1 $0.53
    • 10 $0.349
    • 100 $0.53
    • 1000 $0.1861
    • 10000 $0.1861
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    1SS351-TB-E Digi-Reel 5,055 1
    • 1 $0.53
    • 10 $0.349
    • 100 $0.53
    • 1000 $0.1861
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    1SS351-TB-E Reel 3,000 3,000
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    Mouser Electronics 1SS351-TB-E 27,341
    • 1 $0.52
    • 10 $0.349
    • 100 $0.245
    • 1000 $0.174
    • 10000 $0.128
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    Newark 1SS351-TB-E Cut Tape 13,165 5
    • 1 $0.626
    • 10 $0.438
    • 100 $0.352
    • 1000 $0.268
    • 10000 $0.268
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    TME 1SS351-TB-E 1
    • 1 $0.509
    • 10 $0.311
    • 100 $0.23
    • 1000 $0.207
    • 10000 $0.167
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    Avnet Asia 1SS351-TB-E 10 Weeks 6,000
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    • 10000 $0.13158
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    Avnet Silica 1SS351-TB-E 11 Weeks 3,000
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    Chip One Stop 1SS351-TB-E Cut Tape 2,968 0 Weeks, 1 Days 5
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    • 10 $0.478
    • 100 $0.225
    • 1000 $0.16
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    EBV Elektronik 1SS351-TB-E 12 Weeks 3,000
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    Micro Commercial Components 1SS355HE3-TP

    DIODE GEN PURP 80V 150MA SOD323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS355HE3-TP Cut Tape 4,826 1
    • 1 $0.23
    • 10 $0.139
    • 100 $0.23
    • 1000 $0.05541
    • 10000 $0.05541
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    1SS355HE3-TP Digi-Reel 4,826 1
    • 1 $0.23
    • 10 $0.139
    • 100 $0.23
    • 1000 $0.05541
    • 10000 $0.05541
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    Vyrian 1SS355HE3-TP 370,418
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    Find more 1SS3 price and stock on Findchips.com

    1SS3 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS30 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Kexin Ultra High Speed Switching Application Original PDF
    1SS300 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) Original PDF
    1SS300 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS300 Toshiba Switching Diodes; Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; Features: high-speed switching; Internal connection: 2 in 1; Comments: Please ask for the nearest Toshiba distributor about the production works.; Reverse Voltage, max (V): (max 80) Original PDF
    1SS300 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS300 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Toshiba DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION) Scan PDF
    1SS300 Toshiba DIODE Scan PDF
    1SS300,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 3 USM Original PDF
    1SS300TE85L Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS300TE85L Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) T/R Original PDF
    1SS300TE85R Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS301 Kexin Ultra High Speed Switching Application Original PDF
    1SS301 Toshiba Japanese - Diodes Original PDF
    1SS301 Toshiba Silicon diode for ultra high speed switching applications Original PDF
    1SS301 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS301 Xin Semiconductor SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY Original PDF
    ...

    1SS3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature


    OCR Scan     		1SS315 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS395 SS395 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o


    OCR Scan     		1SS384 SS384 PDF

    SS302

    Abstract: No abstract text available
    Text: 1SS302 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS302 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)


    OCR Scan     		1SS302 SS302 SC-70 SS302 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)


    OCR Scan     		1SS344 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , 0 .9 5 Small Package


    OCR Scan     		1SS336 SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS388 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388 Small Package Low Forward Voltage Low Reverse Current Unit in mm : VF 3 = 0.54V (Typ.) : Ir = 5//A (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS388 PDF

    Diode marking TY

    Abstract: IR switch smd diode marking um marking ty TY SMD diode 1SS314
    Text: Diodes SMD Type VHF TUNER BAND SWITCH APPLICATIONS 1SS314 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small packag Small Total capacitance: CT = 1.2pF Max. Low series resistance: rs = 0.5 +0.1 2.6-0.1 1.0max (Typ.) 0.375


    Original     		1SS314 OD-323 Diode marking TY IR switch smd diode marking um marking ty TY SMD diode 1SS314 PDF

    1SS393

    Abstract: No abstract text available
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage


    Original     		1SS393 1SS393 PDF

    1SS379

    Abstract: 0-110A
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)


    Original     		1SS379 OT-23 100mA 1SS379 0-110A PDF

    smd diode a6

    Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
    Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


    Original     		1SS304 smd diode a6 smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor PDF

    Marking s3

    Abstract: smd transistor s3 1SS388
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02


    Original     		1SS388 OD-523 07max 77max Marking s3 smd transistor s3 1SS388 PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage


    OCR Scan     		1SS321 500nA OT-23MOD 1SS321 PDF

    1SS300

    Abstract: No abstract text available
    Text: 1SS300 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Unit in mm 21 ±0.1 SC-70 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 1.25 ± 0.1 VF=0.92V Typ. t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . )


    OCR Scan     		1SS300 SC-70 100mA 1SS300 PDF

    "UHF DETECTOR"

    Abstract: No abstract text available
    Text: Ordering number:EN4690 _ 1SS375 No.4690 Schottky B arrier Diode SANYO i VHF, UHF detector and Mixer Applications F e a tu re s •Series connection of 2 elem ents in a very sm all-sized package facilitates high-density m ounting and perm its lSS375-applied equipm ent to be made sm aller.


    OCR Scan     		EN4690 1SS375 lSS375-applied "UHF DETECTOR" PDF

    Untitled

    Abstract: No abstract text available
    Text: Diodes High–voltage band switching diode 1SS376 FApplications High voltage switching FExternal dimensions Units: mm FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăPeak reverse voltage guaranteed at 300V with this size. FConstruction


    Original     		1SS376 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current


    Original     		1SS362FV 05mitation, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS361FV PDF

    1SS32

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS322 SC-70 1SS32 PDF

    smd diode UM

    Abstract: smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION DIODE 1SS352 SOD-323 +0.1 1.3-0.1 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Small Package Low forward voltage :VF 3 = 0.98 (Typ) :trr = 1.6ns (Typ) Small total capacitance :CT = 0.5 pF(Typ)


    Original     		1SS352 OD-323 smd diode UM smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16 PDF

    k9 diode

    Abstract: smd transistor marking 26 1SS348
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS348 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF 3 = 0.56V(Typ). 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1


    Original     		1SS348 OT-23 k9 diode smd transistor marking 26 1SS348 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS368 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS368 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Vf 3 - 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.)


    OCR Scan     		1SS368 PDF

    Diodes smd marking f5 reverse voltage

    Abstract: MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370
    Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage


    Original     		1SS370 OT-23 Diodes smd marking f5 reverse voltage MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370 PDF

    1SS377

    Abstract: marking O9
    Text: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		1SS377 OT-23 Te200* 1SS377 marking O9 PDF