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    SOURIAU-SUNBANK 06F5001S2112N3

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    Mouser Electronics 06F5001S2112N3
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    SOURIAU-SUNBANK 06F5001S2112N5-158

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    Mouser Electronics 06F5001S2112N5-158
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    SOURIAU-SUNBANK 06F5001S2112PN5-158

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    SOURIAU-SUNBANK 03F4001S2112Z2

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    SOURIAU-SUNBANK 03F4001S2112P3

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    1S2112 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1S2112 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2112A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    1S2112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF951

    Abstract: No abstract text available
    Text: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features


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    PDF MRF951/D MRF951 MMBR951 MRF9511 MRF951 MK145BP,

    Untitled

    Abstract: No abstract text available
    Text: *W LETT mL'hpt HMHEW P ackard Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth; 3.4 Gbits/s Data Rates • High Gain: 24 dB Typical • Wide Gain Control Range:


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    PDF IVA-14208 IVA-14228 IVA-14208: IVA-14228: IVA-14228 IVA-14 IVA-14208 5091-5550E

    1s211

    Abstract: 2I k
    Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k

    sot 223 marking code jb

    Abstract: pj 939 pj 936 R/diode pj 936
    Text: Whpl H E W L E T T mLìiM P A C K A R D Silicon Bipolar Monolithic Amplifiers HPMA-0600 HPMA-0611 HPMA-0635 HPMA-0685 HPMA-0686 Technical Data Features HPMA-0600 • 3 dB B andw idth: DC to 1.0 GHz • 19.9 dB G ain Typical at 0.5 GHz • Low Noise F igure: 2.7 dB


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    PDF HPMA-0600 HPMA-0611 HPMA-0635 HPMA-0685 HPMA-0686 HPMA-0600 HPMA-0635 HPMA-0686 5091-1546E sot 223 marking code jb pj 939 pj 936 R/diode pj 936

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


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    PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    transisto ot 306

    Abstract: 1147 x motorola
    Text: MOTOROLA O rder this docum ent by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise Transistors M R F 2947A T 1 ,T 2 M R F 2947R A T 1 ,T 2 M otorola’s MRF2947 device contains two high performance, low -noise NPN silicon bipolar transistors. This device has two 941 die housed in the high


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    PDF MRF2947/D MRF2947 transisto ot 306 1147 x motorola

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    MRF545

    Abstract: MRFC545
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F545 M RFC545 The RF Line PNP S ilicon High Frequency Transistors . . . d e s ig n e d f o r h ig h - f r e q u e n c y a n d m e d iu m a n d h ig h r e s o lu t io n c o lo r v id e o d is p la y m o n it o r s .


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    PDF RFC545 MRF545 MRFC545

    GP141

    Abstract: LG CRT
    Text: MOT OROL A SC XSTRS/R F 4bE D • b3b?254 GOTMSG? 4 ■ "T^ 3 3 ~ 0 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA LT1814 The RF Line NPN S ilic o n High Fre q u e n cy T ra n sisto r f r = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR NPN SILICON . . . s p e cifica lly desig n ed fo r CRT d riv e r a p p lica tio n s re q u irin g h ig h v o lta g e and high


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    PDF LT1814 GP-141 S2112 0GT42GÔ GP141 LG CRT

    st 9935

    Abstract: A9935 HPMA-9986 and/ic 9935 a 8 pin
    Text: T tip l HEW LETT wL'KM P A C K A R D I Silicon Bipolar Monolithic Amplifiers HPM A-9900 H PM A -9935 HPM A-9970 HPM A-9985 HPM A-9986 Technical D ata F ea tu re s H PM A -9900 • 15.6 d B O p e n L o o p G a in T y p ic a l a t 1 G H z • 14.6 dB m P jjjg T y p ic a l a t


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    PDF 5091-1828E st 9935 A9935 HPMA-9986 and/ic 9935 a 8 pin

    1S2112

    Abstract: No abstract text available
    Text: M AXIM UM RATINGS Symbol MPS536 Unit C o lle c to r -E m itte r V o lta g e Rating v CEO -1 0 Vdc C o lle c to r-B a s e V o lta g e VCBO -1 5 Vdc E m itte r-B a s e V o lta g e Veb o -4 .5 Vdc C o n tin u o u s >C -3 0 mA P o w e r D is s ip a tio n iv T a = 25°C


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    PDF MPS536 lle500 IS12I 1S2112