1S MARKING TRANSISTOR Search Results

2SD2413G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C

st zo 607

Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
Contextual Info: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.

Contextual Info: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.

5541a

Abstract: 2SC537 Transistor 4733 TA-0824 EN5541 2SC5375 IC 7484
Contextual Info: Ordering number: EN5541À 2SC5375 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amp Applications F eatu re s •High gain : I S21e I 2= lOdB typ f= 1GHz . • High cutoff frequency : fr = 5.2GHz typ. A bsolute M axim um E atin g s at Ta = 25°C

BF994S

Abstract: Marking G2 sot143 code marking MS mosfet marking code gg
Contextual Info: 7110SEL G D b 7 5 ti4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 143 microminiature envelope w ith source and substrate interconnected and intended fo r V H F applications in television tuners.

Contextual Info: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.

marking MS

Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
Contextual Info: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.

Contextual Info: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3 <; k i * mm m t • m. O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. « r j U nit in mm r -e • Low Reverse Transfer Capacitance. : Crss = 20f!F TYP.

91A SOT23

Abstract: FMMT591A FMMT491A DSA003699 91A PNP
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A FMMT591A ISSUE 3 - OCTOBER 1995 FEATURES Low equivalent on resistance RCE sat = 350mΩ at 1A TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 SYMBOL VALUE UNIT VCBO -40 V 0.1 Collector-Emitter Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

LBC850BLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

LBC847ALT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V LBC846ALT1G Series ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

MARKING fzt

Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 605 PART MARKING DETAIL – FZT705 C E B ABSOLUTE MAXIMUM RATINGS.

FZT705

Abstract: MARKING fzt FZT704 DSA003714
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 604 PART MARKING DETAIL – FZT704 C E B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 605 PART MARKING DETAIL – FZT705 C E C B ABSOLUTE MAXIMUM RATINGS.