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    IRF9120

    Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143
    Text: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)


    OCR Scan     		1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB IRF9120 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143 PDF

    IRF8C30

    Abstract: 1RF640 1RFBC40 1RF840 IRFD9010 IRFAF50 IRFAF52 IRFAG50 IRFBC32 1RFD110
    Text: - f M ± Vd s or tt € « fi t Vd g h V £ m fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m '14 Ciss Vd s = Vg s Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ (A) 257 (Ta=25°C)


    OCR Scan     		IRFAF50 O-204AA IRFAF52 1RFAG40 O-220AB IRF9630 IRF9640 T0-220AB IRF8C30 1RF640 1RFBC40 1RF840 IRFD9010 IRFAG50 IRFBC32 1RFD110 PDF

    irfd110

    Abstract: IRFD113 1RFD113
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline TM O S FET TR A N S IS TO R S


    OCR Scan     		IRFD110 IRFD113 IRFD110 IRFD113 1RFD113 1RFD113 PDF