1P NPN SWITCHING TRANSISTOR Search Results

DS199

Contextual Info: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage

Contextual Info: FMMT2222 FMMT2222A S 0 T 2 3 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 FM M T2222A FMMT2222R FMMT2222AR - IB 1P 2P 3P ABSOLUTE M A X IM U M RATINGS SYM BOL PARAMETER C ollector-B ase V oltage C o llecto r-E m itte r V oltag e E m itter-B ase V oltag e

NXP date code marking

Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

LMBT2222ATT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.

Contextual Info: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP

1P NPN

Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

TRANSISTOR 1P

Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

Contextual Info: PRELIMINARY MMDT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data

TRANSISTOR 1P

Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

MMBT2222AT

Contextual Info: MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907FW Ideal for Medium Power Amplification and Switching

Maxim sot-363

Contextual Info: MMDT3904 VISHAY DUAL NPN S M A LL SIGNAL S U R F A C E MOUNT TRANSISTOR I/UTEMir p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 Fl R KXX Mechanical Data_

marking WMP

Abstract: 1P NPN NPN SMALL SIGNAL TRANSISTOR TRANSISTOR MARKING TE SOT363 marking 1p transistor TRANSISTOR 1P MMDT4401
Contextual Info: PRELIMINARY MMDT4401 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR /l i t e w j i I POWER SEMICONDUCTOR/ Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 -HaH- R N E,

K6N sot363 marking

Abstract: 1P NPN MMDT3904 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527
Contextual Info: PRELIM INARY MMDT3904 VISHAY DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 R Ei R k Mechanical Data_

SILICON GENERAL

Abstract: Transistor MARKING 1P 1P NPN TRANSISTOR code marking 1P 3 1p transistor sot323 MMBT2222AW MMBT2907AW TRANSISTOR MARKING CODE 1P mmbt2907* transistor marking 1p transistor
Contextual Info: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE    Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction

transistor 1p

Abstract: MMBT2222AL MMBT2222AL-AE3-R MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222A-G 1p npn switching transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: MMBT2222AL Halogen-free: MMBT2222AG

Contextual Info: Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A PINNING FEATURES • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification.

DUAL NPN K1P

Abstract: marking 1P sot363
Contextual Info: PRELIMINARY MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data

LMBT2222AWT1G

Abstract: marking 1p npn transistor 1P F
Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount

Contextual Info: PRELIMINARY MMST2907A VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I/UTEMir / p o w e fs e h co n w jcto r Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST2222A) Ultra-Small Surface Mount Package SOT-323 TOR VIEW Mechanical Data_

Contextual Info: PRELIMINARY MMST4403 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I/UTEMir / powefsehconwjctor Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST4401) Ultra-Small Surface Mount Package SOT-323 -*l ¡h -' TOR VIEW Mechanical Data_