1N816
Abstract: No abstract text available
Text: 1N816 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N816 Availability Online Store Diodes
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1N816
1N816
STV3208
LM3909N
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qml-19500
Abstract: 1N816 1n816 diode 1N81
Text: INCH-POUND MIL-PRF-19500/199D 14 August 2006 SUPERSEDING MIL-PRF-19500/199C 25 February 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FORWARD-VOLTAGE REGULATOR, TYPE 1N816, JAN MIL-PRF-19500/199 is inactive for new design as of 7 June 1999.
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MIL-PRF-19500/199D
MIL-PRF-19500/199C
1N816,
MIL-PRF-19500/199
MIL-PRF-19500.
qml-19500
1N816
1n816 diode
1N81
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Untitled
Abstract: No abstract text available
Text: .4M.64FR10/1N816 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor Material Package StyleDO-7 Description
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64FR10/1N816
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1N816
Abstract: CMZ2361 1n816 diode C1N4156 CMPD200 CMPD300 CMPD400 CN4156 CN4157
Text: Stabistors Forward Reference Diodes DO-41 DO-35 TYPE NO. VF @ IF VF @ IF VF @ IF VF @ IF VF @ IF CASE (V) (mA) (V) (mA) (V) (mA) (V) (mA) (V) (mA) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 1N816 - - - - - - 0.58 0.70 1.0 - - - - 1.00 100 DO-35 C1N4156
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DO-41
DO-35
1N816
C1N4156
CMPD200
CMPD300
1N816
CMZ2361
1n816 diode
C1N4156
CMPD200
CMPD300
CMPD400
CN4156
CN4157
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1N816
Abstract: CN4156 CN4157 C1N4156 CMPD200 CMPD300 CMPD400 CMZ2360 CSTB567
Text: Stabistors Forward Reference Diodes DO-41 DO-35 TYPE NO. VF @ IF VF @ IF VF @ IF VF @ IF VF @ IF CASE (V) (mA) (V) (mA) (V) (mA) (V) (mA) (V) (mA) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 1N816 - - - - - - 0.58 0.70 1.0 - - - - 1.00 100 DO-35 C1N4156
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DO-41
DO-35
1N816
C1N4156
CMPD200
CMPD300
1N816
CN4156
CN4157
C1N4156
CMPD200
CMPD300
CMPD400
CMZ2360
CSTB567
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BZX75C
Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
Text: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference
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73713S
DO-35
DO-35
800nsec,
BZX75C
BZ102 diode
1n816 diode
BZX75C1V4
G129 stabistor
1N816
BZX75-C2V1
AP2361
BZX75C-1V4
BZ102 1V4
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1N48 diode
Abstract: 1N4156 BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816
Text: AMERICAN POWER 0737135 D DEVICES american SEMICONDUCTORS p o w e r devices, 4 .T «APD 1N4156,1N4157 1N4829,1N4830 1N5179 MPD200, MPD300, MPD400 inc. Stabistor diodes — high speed, multi-pellet, ultra low leakage FEATURES MAXIMUM RATINGS • • • •
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1N4156
1N4157
1N4829
1N4830
1N5179
MPD200,
MPD300,
MPD400
DO-35
400mW
1N48 diode
BZX75C1V4
BZX75C3V6
BZX75-C2V1
BZX75C-1V4
BZ102 diode
1N48
MPD200
1N816
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Untitled
Abstract: No abstract text available
Text: Stabistors Forward Reference Diodes — — O — T Y P E NO. V 00 MIN MAX 1N816 - - C1N4156 - CMPD200 @ IF VF (mA) (V) MIN MAX \I f @ IF (mA) 0/) (mA) - - - - - - 0.90 1.00 0.01 CMPD300 1.40 1.54 CMPD400 1.82 CN4156 MIN MAX - 0.58 0.70 - - 1.21 1.05
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1N816
C1N4156
CMPD200
CMPD300
CMPD400
CN4156
CN4157
CN5179
CMZ2360
DO-35
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1N816
Abstract: 1n816 diode Forward Reference Diode
Text: 1n 8 16 FORWARD REFERENCE DIODE STABISTOR Ml ! »utili • - - - sv central semiconductor Corp. JEDEC DO-35 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N816 ï s a Silicon Forward Reference Diode designed for low level voltage regulating applications where a stabistor is required.
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1N816
DO-35
If-100mA
1n816 diode
Forward Reference Diode
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BZX75C2V8
Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
Text: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac teristics. They are offered with reference
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DO-35
CurrentSTB-569
APD200
APD300
APD400
AP4156
BZX75C2V8
1N816
BZX75C2V1
bzx75c1v4
AP4157
BZX75-C2V1
STB568
AP4830
BZX75-C2V8
G129 stabistor
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BZ102 diode
Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Text: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.
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D73713S
1N816
1N3896,
AP3897
AP3898
AP4829
AP4830,
BZ102/0V7
BZ102/3V4
BZX75C1V4
BZ102 diode
TRANSISTOR C 6090
BZ102
BZX75C2V1
DIODE BZX75c3v6
BZX75C3V6
BZX75C-1V4
BZX75-C1V4
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1N816
Abstract: No abstract text available
Text: Stabistors Forward Reference Diodes * fl ) DO-35 = 0 TYPE NO. 1N816 VF @ if (V) (mA) MIN MAX - - - (V) MIN MAX - - STB-1 if VF @ if VF @ if vf @ if (mA) (V) (mA) (V) (mA) (V) (mA) @ Vf MIN MAX - 0.58 0.70 1.0 MIN MAX - - CASE MIN MAX - - 1.00 100 DO-35
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DO-35
1N816
C1N4156
CMPD200
CMPD300
CMPD400
CN4156
CN4157
CN5179
CSTB567
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1N816
Abstract: CSTB568 9 140 010 154
Text: Stabistors Forward Reference Diodes = — HD DO-41 (0= TYPE HO. VF lp 00 1mA) f *0 « IF V'F 9 iF VIC 0 IF ViF @ »F (mA) 0n (mA) 0 1) (mA) 0 f) (mA) IMN MAX MM MAX IHN MAX DO-35 CASE | MIN MAX MIN MAX 1N816 - - - - - - 0.58 0.70 1.0 - - - - 1.00 100
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1N816
C1N4156
CMPD200
CMPD300
CMPD400
CN4156
CN4157
CN5179
CMZ2360
CMZ2361
CSTB568
9 140 010 154
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1N816
Abstract: C1N4156 CMPD200 CMPD300 CMPD400 CMZ2360 CN4156 CN4157 CN5179 cstb567
Text: Stabistors Forward Reference Diodes — — H > — T Y P E NO. VF ( V) MIN VF @ if \/ F @ (m A) ( V) (m A) V) (m A) MAX MIN MAX MIN MAX DO-35 (D = if @ DO-41 VF if if VF @ (m A) 0V ) (m A) @ { V) MIN MAX MIN MAX if CASE 1N816 - - - - - - 0.58 0.70 1.0
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DO-41
DO-35
1N816
C1N4156
CMPD200
CMPD300
CMPD400
CMZ2360
CN4156
CN4157
CN5179
cstb567
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MZ Series Zener
Abstract: MZ2362 MZ 043 MZ Motorola Zener Motorola MZ2362 1N816 1n816 diode MZ4627 DIODE MOTOROLA Case 403 MZ2360
Text: MZ1000-1 thru M Z1000-37 SILICON MINIATURE PLASTIC E N C A P S U LA T E D Z E N E R DIODES . . . fo r re gu lated p o w er s u p p ly c ircu its , s u rg e p ro te ctio n , a rc s u p p re s s io n and o th e r fu n c tio n s in te levision, a u to m o tiv e and
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MZ1000-1
MJI000-24)
MZ2360
MZ2362
1N816
MZ4614
MZ4627
1N4099
MZ Series Zener
MZ2362
MZ 043
MZ Motorola Zener
Motorola MZ2362
1n816 diode
MZ4627
DIODE MOTOROLA Case 403
MZ2360
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74ALS29821
Abstract: No abstract text available
Text: SN74ALS29821 10-BIT BUS INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS D2S2S, JANUARY 1986 - REVISED MARCH 1988 Functionally Equivalent to AMD AM29821 and AM29822 Provides Extra Data Width Necessary for Wider Address/Data Paths or Buses with Parity • Outputs Have Undershoot Protection
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SN74ALS29821
10-BIT
AM29821
AM29822
300-mil
S29821
74ALS29821
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diode SG22
Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Text: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30
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DDDD33fl
1N462A
1N463A
1N464
1N482
1N482A
1N482B
1N483
1N483A
1N483B*
diode SG22
1N918
1N400 diode
1N5317
1N69B
1N919
1N849
1N673
1N688
1N4141
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SN72710L
Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4
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LH0002C
LH0002CN
NH0005C
DAC08CZ
NH0014C
DH0034
78M12HC
MMH0026CG
79M12AHC
75460BP
SN72710L
MC1013P
MC680P
796HC
mc1235l
MC838P
MC814G
MC1670L
723HC
741hm
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
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301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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