CS103
Abstract: 1n53d diode 1N78A 1N78D 1N53B ka-band mixer 1N78B "Point Contact Diodes" CS102 Silicon Point Contact Mixer Diodes
Text: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low
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CS102
1N78A
1N78B
CS103
1n53d
diode 1N78A
1N78D
1N53B
ka-band mixer
1N78B
"Point Contact Diodes"
CS102
Silicon Point Contact Mixer Diodes
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1N53C
Abstract: 1N78 1N53A 1N53D cs103 1N53 1N53B 1N78A 1N78B CS102
Text: Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low
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CS102
1N78A
1N78B
1N53C
1N78
1N53A
1N53D
cs103
1N53
1N53B
1N78A
1N78B
CS102
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V06T
Abstract: FZ600R12KP4
Text: Technische Information / technical information FZ600R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0 !
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FZ600R12KP4
V06T
FZ600R12KP4
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1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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IN23C
Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low
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DO-22,
DO-23
DO-37
26GHz.
supp26A
DO-37
1N26B
1N26C
IN23C
IN23E
in23we
IN416D
1N26
1N25 diode
1N26A diode
IN23WGMR
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1N21
Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Text: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di odes by basic construction, package style and frequency band. Type
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1N23W
1N415
DMA6498
1N3747W
1N3746
1N3745
DMA6497
DMA5223
DMA5278
DMA5253
1N21
1N1132
1N23
Microwave detector diodes
1n4603
1N416
"Point Contact Mixer"
1n26
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in23c
Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make
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DO-22,
DO-23
DO-37
26GHz.
1N26B
DO-37
1N26C
30MHz,
1000Hz
in23c
IN415C
IN23CR
in23we
1N23F
1N3747
IN26
1N21C
HP-432A
1n416
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1N23C diode
Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure
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DO-22,
DO-23
DO-37
ardN21H
1N21HR
1N150
1N160
1N150R
1N160R
1N23C
1N23C diode
DIODE ku 1490
1N25 diode
1N26A diode
1N415C
1N4294
1N4603R
1N26BR
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1N78
Abstract: AAY52 AAY52R JAN201 K1007
Text: M IC R O W A V E MIXER DIODES AAY52 AAY52R The AAY52 and AAY52R form a re v e r s e p a ir of m ix e r diodes fo r use in balanced m ix e r c irc u its at J-b an d Ku b a n d . The diodes give a good im pedance m atch o ver the whole band. The AAY52 and AAY52R a re packaged
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AAY52
AAY52R
AAY52R
13-18GHZ
JAN201
K1007
AAY52-Page
1N78
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1N78
Abstract: AAY51 AAY51R JAN201 K1007
Text: M IC R O W A V E M IX E R DIO DES AAY5I AAY5IR The AAY51 and AAY51R fo rm a r e v e r s e p a ir of m ix e r diodes fo r use in balanced m ix e r c irc u its at J-b an d Kuband . The diodes give a good im pedance m atch o ver the whole band. The AAY51 and AAY51R a r e packaged
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AAY51
AAY51R
13-18GHZ
JAN201
K1007
45MHz
AAY51-Page
1N78
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Untitled
Abstract: No abstract text available
Text: 02583^4 ADVANCED SEMICONDUCTOR 82D 00071 D DE~| 0550354 0000071 3 ADVANCED SEMIC OND UCTOR SILICONPOINTCONTACTDETECTORDIOOES A S I Point Contact Detector Diodes are designed for applications from UHF through 16 GHz. They feature high burnout resis tance, broadband operation and high tan
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DO-22,
DO-23
DO-37
OODDD74
1N830
1N830A
DO-22
1N2102
1N32A
D0-22
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1N21B diode
Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Text: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.
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MIL-S-19500/339
1N358A,
1N358AR,
1N358AM,
IN358AMR
1N358A
1N358AR
1N358AM
1N358AMR
MIL-S-19500.
1N21B diode
1N21* Diode Detector Holder
1N28 diode
1N21B
1N23CR diode
1N358A
1N358AMR
1N358AR
1N358AM
1N53 ON
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1N23C
Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:
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1N263 JAN
Abstract: 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq
Text: KIL-S-19500/19U U Jaauary 1Q6A OTPKRaZDIHQ^ MIL-3-19500/¿91 28. March 1961 ISUTJUII SpKCIFIQITTOS SEMTOORDUCrOR DEVICE, DIODE, QEHKAKTOH, MUSH TIPS JAH-1I263 Tble specification hag been approved by the Pepartaent of Defense and in aftndfttorr fqf Uie ta^ne IwpartacptB of
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KIL-S-19500/19U
SDPKR38DIHQ
KIL-S-19500A91
JAH-1I263
300FE
1673-7l4-e66/3Â
1N263 JAN
1N23B diode
1N23B
1N21B diode
1N263
1N21B
1N25
1N23CR
DIODE 1N-23b
GENERAL SEMICONDUCTOR diodes marking code rq
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crystal diode
Abstract: 4126 transformer design details 1N53B Transformer Inspection Testing 1N53B DIODE military part marking symbols jan 1N53 1N53BM 1N53BMR 1N53BR
Text: MIL-S-19500/186B i l FêbrUâry i$te5 SUPERSEDING MIL-S-19500/186A EL 18 October 1963 M i r .r r A P V QDTPr'TTT'Tr’ ÀTTn'M TYPES JAN-1N53B, JAN-1N53BR, JAN-1N53BM, AND JAN-1N53BMR This specification is mandatory for use by all Departments ailu AgenCicS Qi the D€pa.rtifi6nt Of PGi6fl5€.
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MIL-S-19500/186B
MIL-S-19500/186A
1N53B,
JAN-1N53BR,
JAN-1N53BM,
JAN-1N53BMR
1N53B
1N53BR
1N53BM
1N53BMR
crystal diode
4126 transformer design details
Transformer Inspection Testing
1N53B DIODE
military part marking symbols jan
1N53
1N53BM
1N53BMR
1N53BR
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dr 25 germanium diode
Abstract: 1N21B diode 1N21B 1N23B Germanium diode F0 215 1N1838 1N23C germanium point contact diode 1N23CR INI838
Text: MTT._.C_1 QROn/uA/ ATA4U U AV VVV/ 10 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR d e v ic e , d io d e , g e r m a n iu m , m ix e r TYPE IN I838 T his specification is m andatory fo r use by all D ep a rt m ents and A gencies of the D epartm ent of Defense.
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95OO/364
INI838
dr 25 germanium diode
1N21B diode
1N21B
1N23B
Germanium diode F0 215
1N1838
1N23C
germanium point contact diode
1N23CR
INI838
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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