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Sensitron Semiconductors 1N6528
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1N6528 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
1N6528		Voltage Multipliers	100mA Iout, 1.5kV Vrrm Fast Recovery Rectifier		Scan	PDF

1N6528 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
M57962L Abstract: IGBT DRIVER SCHEMATIC chip M57959L IGBT DRIVER SCHEMATIC M57962L MITSUBISHI HYBRID small driver igbt motorola to-220 1N6528 600v 20a IGBT driver IGBT Driver Power Schematic Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES common mode noise immunity. This feature allows convenient common referencing of high and low side control signals. Mitsubishi IGBT drivers are designed to	Original	PDF	MJD44H11 MJD45H11 D44VH10 D45VH10 O-220 MJE15030 MJE15031 MJE243 MJE253 M57962L IGBT DRIVER SCHEMATIC chip M57959L IGBT DRIVER SCHEMATIC M57962L MITSUBISHI HYBRID small driver igbt motorola to-220 1N6528 600v 20a IGBT driver IGBT Driver Power Schematic
PC817 example circuits Abstract: opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 5.0 Driving IGBT Modules When using high power IGBT modules it is often desirable to completely isolate control circuits from the gate drive. A block diagram of this type of gate drive is	Original	PDF	6V-18V, 100ns) M57994-01 PC817 example circuits opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L
1N6532 equivalent Abstract: 1N6528 M100UFG JX6528 1n6535 jantxv RM117 1N6531 1N6535 1N6530 1N6532 Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. INCH-POUND MIL-PRF-19500/577C 6 October 2006 SUPERSEDING MIL-PRF-19500/577B 19 February 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,	Original	PDF	MIL-PRF-19500/577C MIL-PRF-19500/577B 1N6528 1N6535, MIL-PRF-19500. 1N6532 equivalent M100UFG JX6528 1n6535 jantxv RM117 1N6531 1N6535 1N6530 1N6532
IGBT DRIVER SCHEMATIC Abstract: IGBT DRIVER SCHEMATIC chip M57962AL m57962l IGBT Driver Power Schematic IGBT DRIVE 50V 300A 600v 20a IGBT driver zener diode 18V 1.5W Mitsubishi Electric IGBT MODULES IGBT 400 amp Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES 6.0 Using Hybrid Gate Drivers common mode noise immunity. This feature allows convenient common referencing of high and low side control signals. Mitsubishi	Original	PDF	MJD44H11 D44VH10 MJD45H11 D45VH10 O-220 MJE15030 MJE243 MJE15031 MJE253 IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC chip M57962AL m57962l IGBT Driver Power Schematic IGBT DRIVE 50V 300A 600v 20a IGBT driver zener diode 18V 1.5W Mitsubishi Electric IGBT MODULES IGBT 400 amp
Untitled Abstract: No abstract text available Text: HIGH VOLTAGE RECTIFIERS 70nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm 1N6528 1N6529 1N6530 1N6531 V RWM RWM = 1500 - 3000V l F = 100mA -250m A T RR = 70nS JANTX JANTXV 1.30(33.02) 1.00(25.4) c A ,095±.030 Í (2.41 ±.89) •020±.003 (.50±.08) 1N6528	OCR Scan	PDF	1N6528 1N6529 1N6530 1N6531 100mA -250m
1N6528 Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117 Text: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart	OCR Scan	PDF	MIL-S-19500/577 1N6528 1N6535 MIL-S-19500. RA642 RA645 RM121 RM131 M60FG M60UFG M25UFG RA641 58A2 RA644 11n65 RM109 M50FG RM117
1N6528 Abstract: 1N6530 1N6529 1N6531 Text: b3E D • S51MfiS4 0 0 0 0 3 M 3 TQS « V n i HIGH VOLTAGE RECTIFIERS 70nS RECOVERY AXIAL LEADED HERMETICALLY SEALED JANTX JANTXV V RW RWMm = 1 5 0 0 -3 0 0 0 V = 100mA - 250mA T RR = 70nS - VOL T AG E M U L T I P L I E R S in. mm 1N6530 1N6531 1N6528 1N6529	OCR Scan	PDF	S51MfiS4 1N6528 1N6529 1N6530 1N6531 500-3000V 100mA 250mA 1N6529 1N6531
high temperature reverse bias Abstract: METHOD-1032 1N6535 JAN Text: SCREENING GUIDE FOR HIGH RELIABILITY APPLICATIONS The following screening guide for discretes and assemblies is suggested for high reliability applications, and can be adjusted or modified to suit your requirements. This is taken from Table IV in MIL-PRF-19500, JANTX screening.	OCR Scan	PDF	MIL-PRF-19500, MIL-STD-750 MIL-PRF-19500 1N5415 1N5416 1N5417 1N5418 1N5419 1N5420 high temperature reverse bias METHOD-1032 1N6535 JAN
X200SG Abstract: Z100SG 1N6521U Text: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000	OCR Scan	PDF	M50FF3 M50FF5 1N6533 M50UFG M50FG M50SG X50FF3 X50FF5 1N6525 X50UFG X200SG Z100SG 1N6521U
1N6512 Abstract: No abstract text available Text: HIGH VOLTAGE RECTIFIERS 70ns Recovery • Axial Leaded • Hermetic • JANTX • JANTXV E LE C TR IC AL C H A R A C TE R IS TIC S AND M AXIM UM RATING S Part Number Working Reverse Voltage Average Rectified Current Vrwm (1) (lo) Volts Reverse Current @ Vrwm	OCR Scan	PDF	1N6512 1N6513 1N6514 1N6515 1N6516 1N6517 1N6518 1N6519 1N6520 1N6521