1N645 JAN Search Results

1n645

Abstract: 1N647-1 1N645-1 DO7 1n647 pk1n 1N645 DO7
Contextual Info: RECTIFIERS 1N645, 1N647; JAN, JAN TX 1N645, 1N647 JAN, JA N TX & JAN TXV 1N645-1, 1N647-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • These devices are useful in general purpose low current applications in high reliability and m ilitary equipment.

1n647

Abstract: 1N647-1
Contextual Info: M IC R OS EN I CORP/ ÜIATERTOIÜN SÜE R F O T IF IF R Ç I .“ *" High Voltage, Low Current D m 00123S5 =1133 • U N I T 1N645, 1N647; JAN, JANTX 1N645, 1N647 JAN, JANTX & JANTXV 1N645-1, 1N647-1 . FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240

Contextual Info: FEATURES 1N645- 1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

1N645-1

Abstract: 1N645-1 JAN 1N645-1 JANTX
Contextual Info: FEATURES 1N645-1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

1N645

Abstract: 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645
Contextual Info: RECTIFIERS JAN, JANTX 1N645 JAN, JANTX & JANTXV 1N645-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • • These devices are useful in general purpose low current applications in high reliability and military equipment. Metallurgical Bond Qualified to MIL-S-19500/240

DO-35 silicon Rectifier diodes

Abstract: 1N649-1 1N647 1N648 1N649 DO-213AA 1N645 1N645-1 1N646 Purpose Rectifier Melf
Contextual Info: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not

DIODE 1N649

Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
Contextual Info: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1

1N649-1

Contextual Info: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N645 THRU 1N649 JAN AND JANTX 1N645-1 THRU 1N649-1 MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE- 225 to 600 Volts .023 0.6 010. .0 1 8 (.0 5 ) CURRENT - 400 Milliamperes T FEATURES 1.50(38.1) 1.00(25.4) ♦ Qualified to MIL-S-19500/ 240E

1N649

Abstract: 1N645 1N645-1 1N646 1N647 1N648 1N649-1 DO-213AA
Contextual Info: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not

Contextual Info: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS

Contextual Info: 1N645+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: 1N645-1+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25

Contextual Info: 1N645+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

1N649-1

Abstract: 1N645-1 1N647-1 1N645-1 JAN N647
Contextual Info: 1N645-1 thru 1N649-1 ITTIH ÎM Microsemi Corp. FEATURES • • • • • • • MILITARY RECTIFIERS Microm iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Standard recovery. PIV to 6 0 0 volts.

Contextual Info: 1N645-1+JANS Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25

Contextual Info: 1N645+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

IN645

Abstract: 1N645-1 1N645-1 JAN
Contextual Info: 1N645-1 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C

Contextual Info: 1N645-1+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25

IN645

Abstract: 1N645-1 1N645-1 JAN JANTX 1N645-1
Contextual Info: 1N645-1 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C

1n645

Abstract: 1n649 1N64 1N646
Contextual Info: 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded compression contacts as found in diode-con structed rectifiers ♦ 0.4 Ampere operation at Ta = 25’C with no ther^

Contextual Info: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.

JTX 1N649-1

Abstract: DSAIH00025213 1n646
Contextual Info: Silicon Rectifier Diodes Use Advantages n 1N645-1 thru 1N649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.

M1 Z

Abstract: DO204MB
Contextual Info: 36E D GENL INSTR / POWER 3fi^D13? DDQ 4 MÔ 7 5 I 16IC • T ' O / - £> 7 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers

Contextual Info: LL645-1 thru LL649-1 Silicon Rectifier Diodes Use Advantages E DO-213AA MELF SMD 1N645 1 647 / 649UR-1 MIL types Used as a small footprint surface mount general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not