Untitled
Abstract: No abstract text available
Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers
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1N5820-1N5822
1N5820
1N5822
DO-201AD
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Untitled
Abstract: No abstract text available
Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers
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1N5820-1N5822
1N5820
1N5822
DO-201AD
1N5820
1N5821
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PDF
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half bridge LLC inverter
Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
half bridge LLC inverter
diode 1n5822g
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
1N5821RL
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PDF
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1N5820
Abstract: C-16
Text: Bulletin PD-20647 rev. A 02/02 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics 1N5820 Units IF AV Rectangular waveform 3.0 A VRRM 20 V 450 A 0.475 V - 65 to 150 °C IFSM @ tp = 5 µs sine VF @ 3 Apk, TJ = 25°C
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PD-20647
1N5820
1N5820
C-16
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PDF
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1N5820
Abstract: C-16
Text: Bulletin PD-20647 rev. B 05/02 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics 1N5820 Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C
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Original
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PD-20647
1N5820
1N5820
C-16
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PDF
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5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
FULL WAVE RECTIFIER CIRCUITS
half bridge LLC inverter
"Power Diode"
10 Ampere Schottky bridge
rectifier diode assembly
THERMAL RUNAWAY IN RECTIFIER
DIODE T28
3 diodes 3 phase half-wave rectifier
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PDF
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1N5822 PACKAGE
Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5822 PACKAGE
1N5821
half wave rectifier LLC
1N5820G
1N5820RL
1N5820RLG
1N5821G
1N5821RL
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1N5820
Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
DIODE T28
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PDF
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1N5820 1N5821 1N5822
Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers
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Original
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1N5820-1N5822
1N5820
1N5822
DO-201AD
1N5820
1N5821
1N5820 1N5821 1N5822
1N5820-1N5822
1N5821
1N5822
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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1N5820-1N5822
Abstract: 1N5822 data sheet 1N5400 1N5820 1N5821 1N5822 CBVK741B019 F63TNR semiconductor band color code
Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers
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1N5820-1N5822
1N5820
1N5822
DO-201AD
1N5820-1N5822
1N5822 data sheet
1N5400
1N5821
1N5822
CBVK741B019
F63TNR
semiconductor band color code
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PDF
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1N5822
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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1N5822 data sheet
Abstract: 1N5820 1N5821 1N5822
Text: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES 1.0 25.4 MIN. * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction
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1N5820
1N5822
DO-201AD
260oC
1N5820
1N5821
1N5822 data sheet
1N5821
1N5822
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820 Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for
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1N5820
1N5820
18-Jul-08
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1N5820
Abstract: 1N5821 1N5822
Text: 1N5820 thru 1N5822 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability
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1N5820
1N5822
DO-201AD
1N5821
1N5820
1N5821
1N5822
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PDF
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1N5822
Abstract: 1N5822 data sheet 1n5822 datasheet 1N5822 diode 1N5820 1N5821
Text: 1N5820 THRU 1N5822 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability
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1N5820
1N5822
DO-201AD
1N5821
1N5820
1N5822
1N5822 data sheet
1n5822 datasheet
1N5822 diode
1N5821
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820 Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5820
1N5820
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820 Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5820
1N5820
11-Mar-11
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PDF
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1n5822
Abstract: 1N5822 st
Text: 1N5820 thru 1N5822 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability
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1N5820
1N5822
DO-201AD
1N5821
1n5822
1N5822 st
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PDF
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1N5820
Abstract: 1N5821 1N5822
Text: 1N5820 THRU 1N5822 Schottky Barrier Rectifier YENYO Voltage Range 20 to 40 V Current 3.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ High reliability ¬ High surge current capability Mechanical Data ¬ ¬ ¬ ¬ ¬ ¬ DO-201AD
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1N5820
1N5822
DO-201AD
MIL-STD-202
1N5820
1N5821
300uS
50mVp-p
1N5821
1N5822
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PDF
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C1104
Abstract: 1N5820 C-16 1n58201
Text: Bulletin PD-20647 rev. C 11/04 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics Values Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C
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Original
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PD-20647
1N5820
1N5820
12-Mar-07
C1104
C-16
1n58201
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20647 rev. C 11/04 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics Values Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C
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Original
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PD-20647
1N5820
1N5820
08-Mar-07
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PDF
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1N5821
Abstract: 1N5820 1N5822 D0201AD
Text: 3 Amp Schottky Rectifier 1N5820, 1N5821, 1N5822 M illim eter Dim. Inches Minimum A B C D .188 1.00 .285 .0 « Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dio. 9.52 1.42 Dia. - PLASTIC D0201AD Microsemi Catalog Number Working
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OCR Scan
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1N582Q,
1N5821,
1N5822
D0201AD
1N5820
1N5821
1N5820,
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PDF
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1N5822
Abstract: 1N582C microsemi 1n5820
Text: • m m Chatsworth, CA m Microsemi 1N5820 thru 1N5822 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage; Drop High Current Capability
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OCR Scan
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1N5820
1N5822
DO-201
1N5821
1N5822
1N582C
microsemi 1n5820
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PDF
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