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    1N5817 EQUIVALENT Search Results

    1N5817 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    1N5817 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FULL WAVE RECTIFIER CIRCUITS

    Abstract: 1N5818 1N5817 1N5819
    Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


    Original     		1N5817/D 1N5817 1N5818 1N5819 1N5817 1N5819 FULL WAVE RECTIFIER CIRCUITS 1N5818 PDF

    1n5819 equivalent

    Abstract: 1n5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent PDF

    1n5819 equivalent

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent PDF

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19 PDF

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL PDF

    1n5819 equivalent

    Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 BRD8011/D. DO-41 1n5819 equivalent 1N5817-19 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG PDF

    1N5817

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D PDF

    "Power Diode"

    Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D "Power Diode" 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5817G PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D PDF

    1N5817

    Abstract: 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 Equivalent for 1N5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG Equivalent for 1N5819 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch


    Original     		1N5817, 1N5818, 1N5819 DO-41 DO-41 PDF

    1n5819

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch


    Original     		1N5817, 1N5818, 1N5819 DO-41 DO-41 1n5819 PDF

    max489 regulator

    Abstract: MAX490 equivalent 4N25 PHILIPS 213CT050 213CT050-3B7 74HC04 NOT GATE datasheet 74HC04 12v center tap transformer MAX253 MAX253CSA
    Text: 19-0226; Rev 0; 1/94 Transformer Driver for Isolated RS-485 Interface _Applications _Features ♦ Power-Supply Transformer Driver for Isolated RS-485/RS-232 Data-Interface Applications ♦ Single +5V or +3.3V Supply


    Original     		RS-485 RS-485/RS-232 350kHz 200kHz MAX253CPA MAX253CSA MAX253CUA MAX253C/D 127mm max489 regulator MAX490 equivalent 4N25 PHILIPS 213CT050 213CT050-3B7 74HC04 NOT GATE datasheet 74HC04 12v center tap transformer MAX253 MAX253CSA PDF

    213CT050-3B7

    Abstract: 4N25 PHILIPS et 78L05 PC410 equivalent PC357T 74HC04 application note max489 regulator 74HC04 MAX252 74HC04 NOT GATE datasheet
    Text: 19-0226; Rev 2; 4/10 Transformer Driver for Isolated RS-485 Interface _Features The MAX253 monolithic oscillator/power-driver is specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. The device


    Original     		RS-485 MAX253 RS-232 RS-485/RS-232 MAX253EUA 213CT050-3B7 4N25 PHILIPS et 78L05 PC410 equivalent PC357T 74HC04 application note max489 regulator 74HC04 MAX252 74HC04 NOT GATE datasheet PDF

    213CT050-3B7

    Abstract: 78l05 sot-23 4N25 PHILIPS 74hc04 oscillator MAX485 equivalent 74HC04 oscillator application note max489 regulator primary center tapped power transformer 74HC04 NOT GATE datasheet 213CT050
    Text: 19-0226; Rev 0; 1/94 Transformer Driver for Isolated RS-485 Interface _Applications _Features ♦ Power-Supply Transformer Driver for Isolated RS-485/RS-232 Data-Interface Applications ♦ Single +5V or +3.3V Supply


    Original     		RS-485 RS-485/RS-232 350kHz 200kHz MAX253CPA MAX253CSA MAX253CUA MAX253C/D 127mm 213CT050-3B7 78l05 sot-23 4N25 PHILIPS 74hc04 oscillator MAX485 equivalent 74HC04 oscillator application note max489 regulator primary center tapped power transformer 74HC04 NOT GATE datasheet 213CT050 PDF

    74HC04 oscillator

    Abstract: 213CT050 213CT050-3B7 74HC04 oscillator application note 74HC04 74HC04 NOT GATE datasheet 74hco4 PC357T SHARP MAX253 max489 regulator
    Text: 19-0226; Rev 1; 8/09 Transformer Driver for Isolated RS-485 Interface _Features The MAX253 is a monolithic oscillator/power-driver, specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. It


    Original     		RS-485 MAX253 RS-232 RS-485/RS-232 MAX253EUA MAX253 74HC04 oscillator 213CT050 213CT050-3B7 74HC04 oscillator application note 74HC04 74HC04 NOT GATE datasheet 74hco4 PC357T SHARP max489 regulator PDF

    74HC04

    Abstract: MAX253CPA transistor 5ct 12v to 220 v transformer turns ratio MAX253 MAX253CSA MAX480 MAX253EPA MAX253ESA centertapped transformer
    Text: 19-0226; Rev 0; 1/94 Transformer Driver for Isolated RS-485 Interface _Applications _Features ♦ Power-Supply Transformer Driver for Isolated RS-485/RS-232 Data-Interface Applications ♦ Single +5V or +3.3V Supply


    Original     		RS-485 RS-485/RS-232 350kHz 200kHz MAX253CPA MAX253CSA MAX253CUA MAX253C/D 127mm 74HC04 MAX253CPA transistor 5ct 12v to 220 v transformer turns ratio MAX253 MAX253CSA MAX480 MAX253EPA MAX253ESA centertapped transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: MAX253 LE AVAILAB Transformer Driver for Isolated RS-485 Interface _Features The MAX253 monolithic oscillator/power-driver is specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. The device


    Original     		MAX253 RS-485 MAX253 RS-232 RS-485/RS-232 PDF

    PC410 equivalent

    Abstract: No abstract text available
    Text: MAX253 LE AVAILAB Transformer Driver for Isolated RS-485 Interface The MAX253 monolithic oscillator/power-driver is specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. The device drives a center-tapped transformer primary from a 5V


    Original     		MAX253 RS-485 MAX253 RS-232 PC410 equivalent PDF

    smd package 1N5819

    Abstract: 1N5819 smd diode 1N5817 smd 1n5819 smd 1N5817 smd diode 1n5819 equivalent 1N5818 smd BKC Semiconductors DO-213AB GLASS Schottky
    Text: 1N5817 thru 1N5819 DO-41 Glass 1 Amp Use Advantages Schottky Rectifier Low forward voltage drop. Fast switching due to majority carrier conduction which results in high operating efficiencies because of Ipw power loss. Used in low voltage power supplies, high frequency inverters and converters,


    OCR Scan     		DO-41 1N5817 1N5819 1N5819 MIL-S-19500/586 100mA 1N5818 smd package 1N5819 1N5819 smd diode 1N5817 smd 1n5819 smd 1N5817 smd diode 1n5819 equivalent 1N5818 smd BKC Semiconductors DO-213AB GLASS Schottky PDF

    1N5822 SS34

    Abstract: equivalent sb560 sb140 equivalent sb360 equivalent sb550 equivalent SS16 SMB T0263AB 1N5822 SMB 1n5822 do 214ab SB160 equivalent
    Text: SCHOTTKY RECTIFIERS 10 A 0.6 CASE TY P E MPG06 i.a DO-5!04AL DO-213AB M ELF DO-214AC SMA 2.0 3.0 DO-214AA SMB DO-201 AD f I 1 \ 1 i • V rrm (VOLTS) 20 SB020 SB120 1N5817 SGL41-20 l!lBYM13-20 SS 12 SU 2 SS22 SL22 SB320 30 SB030 SB130 1N5818 SGL41-30 :iBYM13-30


    OCR Scan     		MPG06 DO-213AB DO-214AC DO-214AA DO-201 SB020 SB120 1N5817 SGL41-20 lBYM13-20 1N5822 SS34 equivalent sb560 sb140 equivalent sb360 equivalent sb550 equivalent SS16 SMB T0263AB 1N5822 SMB 1n5822 do 214ab SB160 equivalent PDF

    MBR140P

    Abstract: BR115P MBR130P MBR120P mbr115
    Text: MOTOROLA SC -CDIODES/OPTO> 15E D 1 b3b75SS D07T573 1 T -0 3 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A X I A L L E A D R E C T IF IE R S . . . employing the S ch o ttky Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry features epitaxial


    OCR Scan     		b3b75SS D07T573 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MBR150, MBR140P BR115P mbr115 PDF