1N4148G Search Results

diode 4148

Abstract: 1N4148G 1N4148-G
Contextual Info: Zowie Technology Corporation 1N4148G Silicon Epitaxial Planar Switching Diode Lead free product Max. 0.5 Applications • High-speed switching Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Features • Fast switching speed • Ultra-small surface mount package

1N4148G

Contextual Info: 1N4148G SMALL-SIGNAL DIODE Reverse Voltage 100 Volts Peak Forward Current - 150mA DO-35 FEATURES .022 0.56 .018 (0.46) 1.02 (26.0) MIN. * Silicon Epitaxial Planar Diode * Fast switching diode. .165 (4.2) MAX. * Lead free product .079 (2.0) DIA. MAX. 1.02 (26.0)

1N4148-G

Contextual Info: Switching Diode 1N4148-G Voltage: 100V Current: 0.15A RoHS Device DO-35 Features -Surge overload ratings to 2 amperes peak. 1.02 26.00 Min. -Ideal for printed circuit board. Mechanical data 0.165(4.20) Max. -Case: Glass, DO-35 0.079(2.00) Max. -Lead: Axial leads,solderable per MIL-STD-202,

1N4148 diode

Abstract: 1N4148L 1N4148 SOT-23 1N4148 diode SOD 80 marKing CA2 sot-23 1N4148 sod123 DIODE 1N4148 1N4148diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed

1N4148 SOD-323 F

Abstract: 1N4148 SOD-323 A 1N4148 Sot23 PACKAGE 1N4148 diode SOD 80 SOD523 1N4148 4148 SOD323 1N4148G free diode 4148 SOD-123 L1n4148
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed

1N4148G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE 3 3 1 2   SOT-23 DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed

Contextual Info: Switching Diode 1N4148-G Voltage: 100V Current: 0.15A RoHS Device DO-35 Features -Surge overload ratings to 2 amperes peak. 1.02 26.00 Min. -Ideal for printed circuit board. Mechanical data 0.165(4.20) Max. -Case: Glass, DO-35 0.079(2.00) Max. -Lead: Axial leads,solderable per MIL-STD-202,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed

Contextual Info: 1N4148-G / LL4148-G SENSITRON SEMICONDUCTOR FAST SWITCHING DIODE Green Products Data Sheet 4225, Rev .- Feat ures " Fast Switching Speed " " " Glass Package Version for High Reliability A High Conductance Available in Both Through-Hole and Surface Mount Versions

1N4148 diode

Abstract: 1N4148L 1N4148 diode SOD 80 1N4148 1N4148 SOT-23 1N4148 sod123 DIODE 1N4148 Sot23 PACKAGE specifications of 1n4148 diode 1N4148 surface mount 1N4148 SOD323
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed

1N4148 SOD-123

Abstract: 1N4148 SOD-323 F 1N4148-G
Contextual Info: UNISONICTECHNOLOGIESCO., LTD 1N4148 DIODE H I GH -SPEED SWI T CH I N G DI ODE ̈ DESCRI PT I ON The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed