Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1N4148 DIE CHIP Search Results

    1N4148 DIE CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    1N4148WS Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.25 A, 2 in 1, SOD-323 Visit Toshiba Electronic Devices & Storage Corporation
    1N4148WT Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.25 A, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    1N4148 DIE CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    04M0

    Abstract: 1N4148 1n4148 die chip MSC1023
    Text: 04M0 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 100V 300mA MONOLITHIC DIODE ARRAY 5 FEATURES: • • • • INDIVIDUAL DIODES EQUIVALENT TO 1N4148 Vf MATCH TO 5 mV at 10 mA ULTRA-HIGH SPEED SWITCHING


    Original     		300mA 1N4148 100ms 300us MSC1023 04M0 1N4148 1n4148 die chip PDF

    electrolytic capacitor 10uF

    Abstract: 1.5V Voltage suppression diode 1n4148 die Toko 10mm 1N4148 D52FU DS1608C-684 IMP525 IMP525EMA IMP525ESA
    Text: IMP525 POWER MANAGEMENT Single Cell Battery Powered Electroluminescent Lamp Driver/Inverter The IMP525 is an Electroluminescent EL lamp driver designed for systems that must operate below 1 volt. The input supply voltage range is 0.9V to 2.5V. Typical output lamp drive voltage is 112V. All four EL lampdriving functions are on-chip. These are the switch-mode power supply,


    Original     		IMP525 IMP525 IMP525-8-9/98 electrolytic capacitor 10uF 1.5V Voltage suppression diode 1n4148 die Toko 10mm 1N4148 D52FU DS1608C-684 IMP525EMA IMP525ESA PDF

    CMPD2836

    Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914 PDF

    1n4148 die

    Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
    Text: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 die DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip PDF

    1N4148 chip

    Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1N4148 chip DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448 PDF

    1n4148

    Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
    Text: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448 PDF

    diode S 335

    Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 diode S 335 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836 PDF

    1n4148 die chip

    Abstract: 1n4448 die chip CMPD914 CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1n4148 die chip 1n4448 die chip CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE PDF

    1n4148 die chip

    Abstract: 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B
    Text: Central TM PROCESS CPD83V Switching Diode Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1n4148 die chip 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B PDF

    VA* VB

    Abstract: No abstract text available
    Text: IMP803 POWER MANAGEMENT Key Features High-Voltage EL Lamp Driver The IMP803 is an Electroluminescent EL lamp driver with the four EL lamp driving functions on-chip. These are the switch-mode power supply, its high-frequency oscillator, the high-voltage H-bridge lamp driver


    Original     		IMP803 IMP803 MS-012AA MO-187AA 004in VA* VB PDF

    zener diode 1n4148

    Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements


    Original     		LTZ1000/LTZ1000A 05ppm/Â LTZ1000A LTZ1000 LT1236 LT1389 800nA, 10ppm/Â zener diode 1n4148 diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199 PDF

    lt0412

    Abstract: h8 diode zener LTZ1000 ltz1000 application notes diode zener 1N4148 LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference Features Description 1.2µVP-P Noise 2µV/√kHr Long-Term Stability n Very Low Hysteresis n 0.05ppm/°C Drift n Temperature Stabilized n 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements n Specified for –55°C to 125°C Temperature Range


    Original     		LTZ1000/LTZ1000A 05ppm/ LTZ1000A LTZ1000 800nA, 10ppm/ 650nVP-P lt0412 h8 diode zener ltz1000 application notes diode zener 1N4148 LM199 PDF

    SN1000

    Abstract: negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148
    Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V


    Original     		LTZ1000/LTZ1000A 05ppm/ LTZ1000 LTZ1000A LT1236 sn1000 1000afas negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148 PDF

    IMP803

    Abstract: 1n4148 die 1N4148 HV803 IMP560 IMP803IMA IMP803LG IMP803SX MS-012AA
    Text: IMP803 POWER MANAGEMENT Key Features High-Voltage EL Lamp Driver The IMP803 is an Electroluminescent EL lamp driver with the four EL lamp driving functions on-chip. These are the switch-mode power supply, its high-frequency oscillator, the high-voltage H-bridge lamp driver


    Original     		IMP803 IMP803 MS-012AA MO-187AA 1n4148 die 1N4148 HV803 IMP560 IMP803IMA IMP803LG IMP803SX MS-012AA PDF

    IMP803

    Abstract: IMP803LG 1N4148 HV803 IMP560 IMP803IMA IMP803SX MS-012AA 180v dc drive circuit diagram
    Text: IMP803 IMP803 POWER MANAGEMENT POWER MANAGEMENT Key Features High-Voltage EL Lamp Driver The IMP803 is an Electroluminescent EL lamp driver with the four EL lamp driving functions on-chip. These are the switch-mode power supply, its high-frequency oscillator, the high-voltage H-bridge lamp driver


    Original     		IMP803 IMP803 MS-012AA MO-187AA IMP803LG 1N4148 HV803 IMP560 IMP803IMA IMP803SX MS-012AA 180v dc drive circuit diagram PDF

    t05 package transistor pin configuration

    Abstract: Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION n The LTZ1000 and LTZ1000A are ultra-stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2 VP-P of noise and long-term stability of 2μV/√kHr.


    Original     		LTZ1000/LTZ1000A LTZ1000 LTZ1000A 05ppm/ LM399 20VRMS LT1021 LT1236 t05 package transistor pin configuration Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode PDF

    LM199

    Abstract: LTZ1000 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000A LTZ1000ACH LTZ1000CH
    Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V


    Original     		LTZ1000/LTZ1000A 05ppm/ LTZ1000 LTZ1000A LT1236 1000afa LM199 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000ACH LTZ1000CH PDF

    LT 0206

    Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.


    Original     		LTZ1000/LTZ1000A LTZ1000A 05ppm/ LTZ1000 LM199, LM399 LT1021 LT1236 LT1389 LT 0206 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199 PDF

    1N4148 tempco

    Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements


    Original     		LTZ1000/LTZ1000A 05ppm/ LTZ1000A LM399 LT1021 LT1236 LT1389 800nA, 1N4148 tempco ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000ACH PDF

    1n4148 die

    Abstract: murata tv flyback 1N4148 D52FU DS1608C-684 IMP527 IMP527EMA IMP527ESA LQH4N331K04 527-01
    Text: IMP527 POWER MANAGEMENT Single Cell Battery Powered Electroluminescent Lamp Driver/Inverter Key Features ◆ Wide operating voltage range - from 0.9V to 2.5V ◆ Simple design requires few passive components ◆ 180V peak-to-peak typical AC output voltage


    Original     		IMP527 IMP527 1n4148 die murata tv flyback 1N4148 D52FU DS1608C-684 IMP527EMA IMP527ESA LQH4N331K04 527-01 PDF

    IMP527

    Abstract: 1N4148 D52FU DS1608C-684 IMP527EMA IMP527ESA LQH4N331K04 527-01
    Text: IMP527 POWER MANAGEMENT Single Cell Battery Powered Electroluminescent Lamp Driver/Inverter Key Features ◆ Wide operating voltage range - from 0.9V to 2.5V ◆ Simple design requires few passive components ◆ 180V peak-to-peak typical AC output voltage


    Original     		IMP527 IMP527 1N4148 D52FU DS1608C-684 IMP527EMA IMP527ESA LQH4N331K04 527-01 PDF

    Chip Inductor CS Coilcraft

    Abstract: murata tv flyback imp525e
    Text: P ow er M anagement Single Cel Battery Powered Electroluminescent Lamp Driver/Inverter The IMP525 is an Electroluminescent EL lamp driver designed for sys­ tems that must operate down to 0.9V. The input supply voltage range is 0.9V to 2.5V. Typical EL lamp drive voltage is 112V. All four EL lampdriving functions are on-chip. These are the switch-mode power supply,


    OCR Scan     		IMP525 Chip Inductor CS Coilcraft murata tv flyback imp525e PDF

    mosfet driver in battery applications

    Abstract: xf2 battery
    Text: r ë4IP TMPROR P o w er M an agem ent High-Voltage EL Lamp Driver The IMP803 is an Electroluminescent EL lamp driver with the four EL lamp driving functions on-chip. These are the switch-mode power sup­ ply, its high-frequency oscillator, the high-voltage H-bridge lamp driver


    OCR Scan     		IMP803 IMP803-6-3/98 mosfet driver in battery applications xf2 battery PDF

    Untitled

    Abstract: No abstract text available
    Text: rAm IMP803 ISO 9001 Registered P ow er M anagem ent High-Voltage EL Lam p Driver The IMP803 is an Electroluminescent EL lamp driver with the four EL lamp driving functions on-chip. These are the switch-mode power sup­ ply, its high-frequency oscillator, the high-voltage H-bridge lamp driver


    OCR Scan     		IMP803 IMP803 MO-187AA P803-7-01/99 PDF