1N4001 SILICON DIODE Search Results

Dioden

Abstract: 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL
Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

EM513

Abstract: EM518
Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-21 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -4.5 Ø 2.6 Ø 0.77±0.07

em516

Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-30 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-17 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

CHARACTERISTICS DIODE 1N4007

Abstract: diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004
Contextual Info: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2

diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001
Contextual Info: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2

silicon diode 1N4001 specifications

Abstract: 1N4001 rectifier diode 1N4001 specifications
Contextual Info: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2

Contextual Info: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)

ROHM 1N4001A

Abstract: 1N4001 general diodes diodes 1N4001 1N4001A 1N4001 silicon N4002A 1N4002A
Contextual Info: f f -4 ¿i — K/Diodes 1N4001 A/1 N4002A/1N4003A/1N4004A 1N4001 A/1 N4002A/1N4003A/ 1N4004A Silicon Diffused Junction General Rectifying Diodes • • « ft //Dimensions Unit : mm 1) * ' V 7 , i 4 i t T & -5 (JEDEC : DO41 ) 0 2) 5 o 3) • Features 1) Glass sealed type (JEDEC : DO41).

1N4001CSM

Contextual Info: mi 1N4001 CSM SEME LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for A= 1.02 ± 0.10 0.04 ± 0.004 1.40 (0.055) max. High Reliability Applications SOT23 CERAMIC (CSM)

Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES

1N4001

Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 BY133
Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

free 1N4007

Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

diode 1N4001 specifications

Abstract: 1n4001 1N4001 general diodes parameter 1N4001 function of 1n4007 1N4001 silicon GENERAL PURPOSE 1N4007 DIODES 1N4007 datasheet d 1n4007 equivalent components of diode 1n4001
Contextual Info: General Purpose Rectifiers Standard Recovery Plastic Silicon Rectifiers AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded Weight: 0.4 gram approximately Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are 1N4001 KEL DEVICE MARKING DIAGRAM

1N4001-G

Abstract: 1N4007-G 1N 4007 SMD 1N4001 SMD 1n4007 smd 4001 1n diode diode 4007 smd diode 1N4001 1N4002 1N4003
Contextual Info: COMCHIP General Purpose Silicon Rectifiers SMD Diodes Specialist 1N4001-G Thru. 1N4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device Features DO-41 -Low cost construction. -Fast forward voltage drop. -Low reverse leakage. -High forward surge current capability.

SURFACE MOUNT SILICON RECTIFIER

Abstract: DO-214AC, SMA 1N4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

1N4007 sma

Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

surface mount diode w1

Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

1N4007 sma

Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

Contextual Info: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.

surface mount 1n4007

Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

diode 4007 details

Abstract: 1N4007 SURFACE MOUNT Diode ttr
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION