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    1N23 DIODE Search Results

    1N23 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UC1611J
    		Texas Instruments Quad Schottky Diode Array 8-CDIP -55 to 125 Visit Texas Instruments
    5962-90538012A
    		Texas Instruments Quad Schottky Diode Array 20-LCCC -55 to 125 Visit Texas Instruments Buy
    TPD4E05U06DQAR
    		Texas Instruments 4-Channel Ultra-Low-Capacitance IEC ESD Protection Diode 10-USON -40 to 125 Visit Texas Instruments Buy
    5962-9053801PA
    		Texas Instruments Quad Schottky Diode Array 8-CDIP -55 to 125 Visit Texas Instruments Buy
    UC3610DW
    		Texas Instruments Dual Schottky Diode Bridge 16-SOIC 0 to 70 Visit Texas Instruments Buy

    1N23 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N23 diode

    Abstract: 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode
    Contextual Info: MICROWAVE MIXER DIODE I48CAY/B Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode for use at X band. The 148CAY/B is interchangeable with the 1N23 s e r ie s . QUICK REFERENCE DATA Typical noise figure at X band 6.5 Frequency range


    OCR Scan     		I48CAY/B 148CAY/B 375GHz, 45MHz K1007, 45MHz. JAN-106holder, 1N23 diode 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode PDF

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


    OCR Scan     		PDF

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF

    1n415c

    Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
    Contextual Info: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    OCR Scan     		CS100 1N23F 1N23G 1N23WG 1N23H CS101 1N415C 1n415c 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C PDF

    1N21

    Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
    Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type


    OCR Scan     		1N23W 1N415 DMA6498 1N3747W 1N3746 1N3745 DMA6497 DMA5223 DMA5278 DMA5253 1N21 1N1132 1N23 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1n26 PDF

    1N23 diode

    Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
    Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original     		CS100 CS101 1N23 diode 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100 PDF

    1N21B

    Abstract: 1n23 cv102
    Contextual Info: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor


    Original     		500/1000mA 1N21C 1N23A 1N21B 1N21B 1n23 cv102 PDF

    CS100

    Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
    Contextual Info: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original     		CS100 CS101 CS100 cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C PDF

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR PDF

    1N21B

    Abstract: 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A
    Contextual Info: 46 Electronic Valves Z& I Aero Services Ltd London England 1972-73 'Tm ìiX G E R M A N IU M J U N C T IO N S T U D M O U N T E D H A L F W A V E R E C T IF IE R S GJ3M, 200 p.i.v. GJ5M, 300 p.i.v. GJ6M, 150 p.i.v. GJ7M, 80 p.i.v. Note 400/800 m A D C . 400/800 m A DC


    OCR Scan     		SZT19 1N23C CV111 1N23CR* CV112 1N23E CV291 1N23WEE CV2226 CV2258 1N21B 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A PDF

    1N21 diode

    Abstract: 1N23 diode 1N21 Diode Detector Mount 1N23 Diode Holder 1n21 1N21* Diode Detector Holder Microlab/FXR 1n21 1N23 HY-10N BNC T connectors INSERTION LOSS
    Contextual Info: MICROLAB/FXR Signal Samplers HX, HY, HZ series ♦ ♦ ♦ ♦ ♦ High Power, Reactive Probe 50 – 12,000 MHz 500 Watt Average Power Rating Minimal RF Insertion Loss High Reliability N, BNC, TNC, or SMA Standard Custom miniaturized versions to special order


    Original     		HX-10N HY-10N HZ-10N 1N21 diode 1N23 diode 1N21 Diode Detector Mount 1N23 Diode Holder 1n21 1N21* Diode Detector Holder Microlab/FXR 1n21 1N23 HY-10N BNC T connectors INSERTION LOSS PDF

    1N23 diode

    Abstract: 1N23 1n26 X203M 1N23 CR diode 1N23x100 x203 x200
    Contextual Info: GENERAL PURPOSE D E T E C T O R S CR YSTAL MOUNTS X100 S E R IE S X200 X300 0.01-12.4 GHz GENERAL INFORMATION: The X100 series crystal holders are designed to accept the IN21-IN23/IN26 type ceramic crystal cartridge. The X100 series are inexpensive, broad­


    OCR Scan     		IN21-IN23/IN26 X101M X203M X301M 1N23 diode 1N23 1n26 X203M 1N23 CR diode 1N23x100 x203 x200 PDF

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


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    D65019

    Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
    Contextual Info: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100


    Original     		MIL-S-19500/322 ASME-14 037Z3 D65019 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR 1N23WG PDF

    1N23 diode

    Abstract: SINGLE ENDED MIXER 1N23 ALPHA 1N23 Diode Holder surface mount zero-bias detector diode silicon di for microwave diode mixer x-band motion detector metal diode Silicon Point Contact Mixer Diodes zero bias diode
    Contextual Info: Application Note 80800: Mixer and Detector Diodes 2. BONDED CONTACT This construction features a gold wire bonded from the rim of the package to a bonding pad on the chip and then to the rim opposite the first bond. A cap is then soldered to this rim thus completing the assembly and


    OCR Scan     		PDF

    IC free

    Abstract: Nippon Aleph r 2501 kk 106 OJ-451-N23 D2253 HP 4506 oj-4506-n23 Aleph 1N23 diode OH-217
    Contextual Info: www.aleph-usa.com Photosensors DATA BOOK Photosensors DATA BOOK JUN 2004 First edition Things to keep in mind when using the data book 1. Changes in specifications Due to improvements, please be aware that the specifications/descriptions, etc., of the products contained


    Original     		QS9000/TS16949 IC free Nippon Aleph r 2501 kk 106 OJ-451-N23 D2253 HP 4506 oj-4506-n23 Aleph 1N23 diode OH-217 PDF

    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


    OCR Scan     		3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r PDF

    Reflective Type

    Abstract: IC free OS-551A-N2 OH-218-A5 OH-318-A5 JASO d 611 Nippon Aleph high resolution reflective photo interrupter OM-751-N24 OH-217
    Contextual Info: Photosensors DATA BOOK August 2007 Second edition Things to keep in mind when using the data book 1. Changes in specifications Due to improvements, please be aware that the specifications/descriptions, etc., of the products contained in this data book are subject to change without prior notice.


    Original     		827-8000FAX. 44-1933-679600FAX 852-2411-0318FAX Reflective Type IC free OS-551A-N2 OH-218-A5 OH-318-A5 JASO d 611 Nippon Aleph high resolution reflective photo interrupter OM-751-N24 OH-217 PDF

    systron Donner 410

    Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
    Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES


    Original     		MIL-STD-750E MIL-STD-750D systron Donner 410 MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor PDF