1N1188 Search Results

MR3492

Abstract: MR3495 MR3493 1N1164 MR2502 MR2504 MR2510 MR3491 MR2500 MR2501
Contextual Info: STANDARD RECOVERY RECTIFIERS continued lo, AVERAGE FORWARD RECTIFIED CURRENT (A) 25 *0 CASE 35 193-03 Plastic Note 2 43-05 257-01 / V rrm 50 MR2500 MR3491 1N1183 100 MR2501 MR3492 1N1164 200 MR2502 MR3493 1N1186 400 MR2504 MR3495 1N1188 600 MR2506 800 MR2508

Contextual Info: 1N1188R+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N1188+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

DO-203AB Package

Abstract: 1N1190 1N1184 1N1186 1N1190 JANTXV 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

Contextual Info: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

70HF120

Abstract: 85HF120 88HF120 85hf80
Contextual Info: International llORlRectifier Rectifiers Standard Recovery 40-85 Amps Part Number •f <AV TC Vr r m V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100 150 200 300 400 500 600 43HF10 43HF20 43HF40 43HF60 43HF80 43HF100 43HF120 43HF140

diode 1N1188

Abstract: 1N1189 1N1190 diode 1N1188 1N1190
Contextual Info: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol "R" devices have leads reversed

86HF12

Abstract: 1N1185A 70HF120 b5ta
Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4A 5S 452 O Q l O b T S 2 International ïô r I Rectifier Rectifiers, Standard Recovery 40 TO 85 AMPS v Part RRM ’ f AV @TC number *FSM ^ 50Hz (V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100

Contextual Info: 1N1188R+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

1N1184

Abstract: part marking Ht1 DO-203AB Package 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

Contextual Info: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: 1N1188+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

Contextual Info: 1N1188+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

1n1186a

Abstract: 70HF120 88hf100
Contextual Info: International 6HIRectifier Diodes Standard Recovery 40-85 Amps lF AV @Tc Pari Number Vr r m (V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100 150 200 300 400 500 600 1N2128A 1N2129A 1N2130A 1N2131A 1N2133A 1N2135A 1N2137A 1N2138A 50

85hf120

Abstract: 70hf120 73HF40 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A R7B24 1N1189A
Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4A 5S 452 O Q l O b T S 2 International ïô r I Rectifier Rectifiers, Standard Recovery 40 TO 85 AMPS Part v RRM ’f AV @TC number *FSM ^ 50Hz (V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

A139

Abstract: SCR Handbook, General electric IN1188 24kf A40F 1N3909-13 1N5332 sk51
Contextual Info: FAST RECOVERY RECTIFIERS SELECTOR GUIDE 2000 1500 « 1000 900 600 700 !j 600 § 500 s z 400 5 300 §H 200 _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE C U R R EN T -A M PER ES STANDARD RECTIFIERS SELECTOR GUIDE 300 0 V3 2000

1N1190A

Contextual Info: MCC 1N1183A THRU 1N1190A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 40 Amp Rectifier 50 to 600 Volts High Surge Capability Low Leakage Low Forward Voltage Drop

1N1190

Abstract: PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2005-01-31 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

1N1184

Abstract: 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N1190R 1N3766 1N3768
Contextual Info: Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 U N F -3 A 2. Full th re ad s within 2 1 /2 threads 3. Standard Polarity; Stud is Cathode Reverse P olarity: Stud is Anode J_F L Ì A B C D E F G H J K M N P 1 .667 -.422

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL