IN 5399 TL
Abstract: 5397
Text: 1N5391 thru 1N5399 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 25 A VF 1.4 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current
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1N5391
1N5399
DO-204AL
DO-41)
DO-204AL,
UL-94V-0
J-STD-002B
MIL-STD-750,
IN 5399 TL
5397
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1N5390
Abstract: diode in 5392 1N5391 1N5399
Text: 1N5391 . 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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1N5391
1N5399
DO-15
1N5390
1N5390
diode in 5392
1N5391
1N5399
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1N5390
Abstract: 1N5391 1N5399
Text: 1N5391 . 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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1N5391
1N5399
DO-15
1N5390
1N5390
1N5391
1N5399
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1N5391
Abstract: 1N5399 A-405
Text: LESHAN RADIO COMPANY, LTD. 1N5391 thru 1N5399 General Purpose Plastic Rectifiers 1.FEATURES * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.5A Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique
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1N5391
1N5399
DO-15,
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
1N5399
A-405
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diode in 5395
Abstract: 1N5391 1N5399
Text: Certificate TH97/10561QM 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * Certificate TW00/17276EM High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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TH97/10561QM
1N5391
1N5399
TW00/17276EM
DO-41
UL94V-O
MIL-STD-202,
diode in 5395
1N5399
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Untitled
Abstract: No abstract text available
Text: TH97/2478 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * IATF 0113686 SGS TH07/1033 TH09/2479 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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TH97/2478
1N5391
1N5399
TH07/1033
TH09/2479
DO-41
UL94V-O
MIL-STD-202,
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diode IN 5397
Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode IN 5397
1N 5392 DIODE
diode in 5392
T3 marking
1N 4000 diode
diode 1n5392
diode 1n5397
1N5392-T3
1N5392-TB
1N5399
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Untitled
Abstract: No abstract text available
Text: 1N5391 – 1N5399 1.5A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
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diode 1n5397
Abstract: 1N5392
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-15, Molded Plastic
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode 1n5397
1N5392
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Untitled
Abstract: No abstract text available
Text: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Plastic Material - UL Flammability
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1N5391/S
1N5399/S
DO-41
MIL-STD-202,
DO-15
DO-15
DS28003
1N5391/S-1N5399/S
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Untitled
Abstract: No abstract text available
Text: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Plastic Material - UL Flammability
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1N5391/S
1N5399/S
DO-41
DO-15
MIL-STD-202,
DS28003
1N5391/S-1N5399/S
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED 08/06/2009 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • • • • • Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Lead Free Finish, RoHS Compliant Note 3
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1N5391/S
1N5399/S
DO-41,
DO-15
J-STD-020C
MIL-STD-202,
DO-41
DO-15
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Untitled
Abstract: No abstract text available
Text: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop B A A Low Reverse Leakage Current Surge Overload Rating to 50A Peak Lead Free Finish, RoHS Compliant Note 3
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1N5391/S
1N5399/S
DO-41,
DO-15
J-STD-020C
MIL-STD-202,
DO-41
71O-41
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Untitled
Abstract: No abstract text available
Text: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current B A A Surge Overload Rating to 50A Peak Lead Free Finish, RoHS Compliant Note 3
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1N5391/S
1N5399/S
DO-41,
DO-15
DO-41
J-STD-020C
MIL-STD-202,
60further
DS28003
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Sony IMX 183
Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820
BYX22-400
BYX22-600
BYX22-800
BYX26-60
YX26-150
BYX36-1
BYX36-300
1.0 k mef 250
ME4003
ME4002
MA0411
transistor me6101
transistor BC 172B
2N2959
transistor bf 175
2N5173
2n3072
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diode IN5399
Abstract: IN5399 in5391 diode IN5391 N5399 diode IN5391 diode rectifier in5399 3 Ampere silicon Diode IN5397 20 ampere diode
Text: DIODES LIMITED IN5391 TO IN5399 SERIES FAI RAC RES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847255 SEMICONDUCTOR MANUFACTURERS 1.5 AMPERE SILICON RECTIFIERS With “ LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency
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IN5391
IN5399
1N5931
1N5392
1N5393
1N5395
1N5397
1N5398
1N5399
diode IN5399
in5391 diode
N5399
diode IN5391
diode rectifier in5399
3 Ampere silicon Diode
IN5397
20 ampere diode
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N5399
Abstract: 1n4365 D0201AD 1N4004 or 1N5404 N5397 1N4140 1N4144 1N4007 DO-41 package 1N4145 681000
Text: S C H O T T K Y R EC T IFIER S OptritlfVfl arvd Vrrm lo Mam Vf Type Package <Vo*» An*) (Amp*) (Volt») 1N5817 D O -4 1 20 1.0 25 .4 5 1a 1N5818 D O -4 1 30 1.0 25 055 1N5019 D O -41 40 1.0 25 0.00 S R I 20 D O -41 20 1.0 40 050 SR130 D O -41 30 1.0
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1N5817
DO-41
1N5818
1N5819
SR130
SR140
N5399
1n4365
D0201AD
1N4004 or 1N5404
N5397
1N4140
1N4144
1N4007 DO-41 package
1N4145
681000
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E421 fet
Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.
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O-72P*
O-92X
O-105
O-106
O-106P
E421 fet
equivalent transistor e176
J2N2608
J2N3821
E112 jfet
e420 dual jfet
2N390G TRANSISTOR
E421 dual JFET
2N4360 equivalent transistors
Teledyne Semiconductor jfet
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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SN7401
Abstract: National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27
Text: GENERAL INFORMATION ORDERING INSTRUCTIONS AND MECHANICAL DATA FUNCTIONAL INDEX/SELECTION GUIDE PRODUCT GUIDE ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS PROGRAMMABLE LOGIC ARRAYS BETA PRODUCTS EXPLANATION OF NEW LOGIC SYMBOLS CONNECTOR AND KEYBOARD PRODUCTS
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SN54/74
SN54ALS8003
SN74ALS8003
SN7401
National Semiconductor 4045
transistor bf 175
74ALS569
74AS1008
SN7449
SN74ALS244A
SN54ALS1000A
SN74ALS519
SN54ALS27
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