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Power Integrations 1SD536F2-1MBI2400U4D-170 Gate Drivers ONLY for FUJI 1MBI2400U4D-170 module
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Mouser Electronics	1SD536F2-1MBI2400U4D-170					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fuji Electric Co Ltd 1MBI2400U4D-170 Igbt, Module, Triple N Channel, 1.7Kv, 3.6Ka; Continuous Collector Current:3.6Ka; Collector Emitter Saturation Voltage:2.47V; Power Dissipation:14.7Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel \|Fuji Electric 1MBI2400U4D-170
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Newark	1MBI2400U4D-170	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

1MBI2400U Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1MBI2400U4D170 Abstract: 1MBI2400U4D-170 ic4800a 1mbi2400u Text: 1MBI2400U4D-170 IGBT Modules IGBT MODULE U series 1700V / 2400A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply	Original	PDF	1MBI2400U4D-170 1MBI2400U4D170 1MBI2400U4D-170 ic4800a 1mbi2400u
IC4800 Abstract: ic 4800 1mbi2400u4d-120 1mbi2400u Text: 1MBI2400U4D-120 IGBT Modules IGBT MODULE U series 1200V / 2400A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply	Original	PDF	1MBI2400U4D-120 IC4800 ic 4800 1mbi2400u4d-120 1mbi2400u
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	PDF	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
fuji igbt transistor modules Abstract: 1mbi1200u fuji inverter LM 1MBI1600U4C-120 fuji transistor modules fuji bipolar transistor GTO thyristor diode fuji order number M143 1MBI1200 Text: High-power IGBT Modules for Industrial Use Takashi Nishimura Hideaki Kakiki Takatoshi Kobayashi 1. Introduction Power devices used in industrial-use high capacity inverter system applications are predominately GTO gate turnoff thyristors, which easily handle high	Original	PDF
2MBI450U4E-120 Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！	Original	PDF	max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120