1KS TRANSISTOR Search Results

transistor ballast 1000W

Abstract: transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor
Contextual Info: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 Outline Drawing Features • • • • • • • • • MAPRST1030-1KS NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation

TRANSISTOR 618

Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
Contextual Info: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration

transistor 1000W

Abstract: 1030
Contextual Info: MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10 s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

transistor 1000W

Abstract: transistor ballast 1000W NPN 1000w MAPRST1030-1KS 1030 mhz
Contextual Info: MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10 s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks

Contextual Info: PRELIMINARY SFT8600/4 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 1000 VOLTS NPN TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • • BVCER to 1000 volts Very Low Saturation Voltage

bf850

Abstract: marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B
Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)

BC 945

Abstract: BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323
Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP 1 2006-09-19

transistor A 562

Abstract: STX7905 STX6905
Contextual Info: PRELIMINARY STX7905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS NPN TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.

marking 1F SOT323

Abstract: marking 1ks 1LS SOT 23 sot-323 transistor marking code 15 BC846AW BC846BW BC846W BC847AW BC847BW BC847W
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor BC846W/BC847W/BC848W FEATURES z Low Current. z Low voltage. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.

TR0007A

Abstract: STX6905 STX7905 pnp transistor 600V transistor A 562
Contextual Info: PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.

3.6C

Contextual Info: H ìt t a-»-» : Êw ÊiC rïïjSG iT lÈ f I I I V I 140 Commerce Drive Montgomeryviile, PA 18936-1013 ^ ^ ^ «* * SD1 496 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 860-900MHZ CLASS C, BASE STATIONS • CLASS C TRANSISTOR * FREQ U EN CY • V O LTA G E

1B marking

Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package1)

1LS transistor

Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
Contextual Info: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C

KTC3230

Abstract: KTC3231
Contextual Info: SEMICONDUCTOR KTC3231 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. A R S E FEAUTRES F ᴌLarge Collector Current Capability. P Q D B ᴌLarge Collector Power Dissipation Capability. MAXIMUM RATING Ta=25ᴱ

siemens transistor t2

Abstract: 1LS transistor transistor T1 Q62702-C2155 Q62702-C2156 Q62702-C2157 marking 1ks transistor marking T2 CE030
Contextual Info: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● 3 4 Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C

BC846 Infineon

Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)

BC846 Infineon

Abstract: BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323
Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)

BCV61

Abstract: BCV61A BCV61B BCV61C VPS05178
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

VPS05178

Abstract: BCV61
Contextual Info: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking

transistor marking code 7e

Abstract: D 843 Transistor transistor MUI
Contextual Info: SIEMENS NPN Silicon Double Transistors • • • • BCV61 To be used as a current mirror Good thermal coupling and V b e matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel B C V 61 A B C V 61 B B C V 61 C

BCV61

Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

C1741

Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
Contextual Info: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

marking 1ks

Abstract: BCV61
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration