Untitled
Abstract: No abstract text available
Text: SN74ACT2227, SN74ACT2229 DUAL 64 x 1, DUAL 256 × 1 FIRST-IN, FIRST-OUT MEMORIES SCAS220C – JUNE 1992 – REVISED OCTOBER 1997 D D D D D D D D D D Dual Independent FIFOs Organized as: 64 Words by 1 Bit Each – SN74ACT2227 256 Words by 1 Bit Each – SN74ACT2229
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SN74ACT2227,
SN74ACT2229
SCAS220C
SN74ACT2227
28-Pin
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8550HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION
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L8550HXLT1G
L8550H
L8550HPLT1G
3000/Tape
L8550HPLT3G
10000/Tape
L8550HQLT1G
L8550HQLT3G
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L8550HQLT1G
Abstract: L8550HRLT1G
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series S-L8550HPLT1G Series FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H 3 ƽWe declare that the material of product compliance with RoHS requirements.
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L8550HPLT1G
S-L8550HPLT1G
L8550H
AEC-Q101
3000/Tape
L8550HPLT3G
s-L8550HPLT3G
10000/Tape
L8550HQLT1G
L8550HRLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.
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L8550HPLT1G
L8550H
3000/Tape
L8550HPLT3G
10000/Tape
L8550HQLT1G
L8550HQLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.
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L8550HPLT1G
L8550H
3000/Tape
L8550HPLT3G
10000/Tape
L8550HQLT1G
L8550HQLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series 3 FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.
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L8550HPLT1G
L8550H
3000/Tape
L8550HPLT3G
10000/Tape
L8550HQLT1G
L8550HQLT3G
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sot-23 Marking 1HD
Abstract: L8550HRLT1G SOT-23 1HD 1hb marking L8550HPLT1G 1HF MARKING L8550HQLT1G L8550HSLT1G L8550 1Hd SOT23
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements.
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L8550HPLT1G
L8550H
3000/Tape
L8550HPLT3G
10000/Tape
L8550HQLT1G
L8550HQLT3G
sot-23 Marking 1HD
L8550HRLT1G
SOT-23 1HD
1hb marking
L8550HPLT1G
1HF MARKING
L8550HQLT1G
L8550HSLT1G
L8550
1Hd SOT23
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L8550HPLT1G
Abstract: 1Hd SOT23
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series S-L8550HPLT1G Series FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. 3 ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements.
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L8550HPLT1G
S-L8550HPLT1G
L8550H
AEC-Q101
3000/Tape
L8550HPLT3G
s-L8550HPLT3G
10000/Tape
L8550HPLT1G
1Hd SOT23
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sot-23 Marking 1HD
Abstract: No abstract text available
Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 -40 -5.0 WEITRON http://www.weitron.com.tw 1/2 -0.15 u -0.15 u 27-Jul-2012 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8550LT1
OT-23
27-Jul-2012
-80mAdc)
OT-23
sot-23 Marking 1HD
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sot-23 Marking 1HD
Abstract: TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1
Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 O E=-20Vdc, I E= 0) -40 -5.0 WEITRON http://www.weitron.com.tw 1/4 -0.15 u -0.15 u -0.15 u Rev.A 10-Apr-09 SS8550LT1
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SS8550LT1
OT-23
-20Vdc,
10-Apr-09
-80mAdc)
OT-23
sot-23 Marking 1HD
TOP marking 1HD
SOT-23 1HD
1hb marking
SS8550LT1
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smd diode s8
Abstract: DIODE SMD MARKING CODE S8 DIODE SMD MARKING CODE SF SMD S6 oc Diode smd s6 94 smd code 1HF Recovery Glass Passivated sod-123 marking CS SOD-123 smd diode s6 smd SMA diode marking s2
Text: COMCHIP SMD Super Fast Recovery Rectifiers SMD Diodes Specialist CSFM101-HF Thru. CSFM105-HF Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free Features Mini SMA / SOD-123 -Batch process design,excellent power dissipation offers better reverse leakage current and thermal
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CSFM101-HF
CSFM105-HF
OD-123
94-V0
OD-123/Mini
Mini-SMA/SOD-123
QW-JS001
CSFM102-HF
CSFM103-HF
smd diode s8
DIODE SMD MARKING CODE S8
DIODE SMD MARKING CODE SF
SMD S6 oc
Diode smd s6 94
smd code 1HF
Recovery Glass Passivated sod-123
marking CS SOD-123
smd diode s6
smd SMA diode marking s2
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ultra fast recovery time diode 10ns
Abstract: No abstract text available
Text: Low Profile SMD Ultra Fast Recovery Rectifiers CURMT103-HF Thru. CURMT107-HF Reverse Voltage: 200 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123H Features 0.146 3.7 0.130(3.3) 0.018(0.45) 0.006(0.15) -Excellent power dissipation offers better reverse
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CURMT103-HF
CURMT107-HF
OD-123H
CURMT103-HF
CURMT104-HF
QW-JU004
ultra fast recovery time diode 10ns
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1206 footprint dimension
Abstract: No abstract text available
Text: Low Profile Ceramic Chip Capacitors NMC-E Series CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) • Z5U AND Y5V DIELECTRIC DECOUPLING CAPACITORS FOR SURFACE MOUNT MEMORY AND LOGIC CIRCUITS • LOW PROFILE IN STANDARD 0805, 1206 AND 1210 FOOTPRINT
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Untitled
Abstract: No abstract text available
Text: MIC5211 Dual jiCap 50mA LDO Voltage Regulator Preliminary Information General Description Features The M IC5211 is a dual uCap™ 50mA linear voltage regulator with very low dropout voltage typically 20mV at light loads , very low ground current (225 jaA at 20mA output current), and
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MIC5211
IC5211
OT-23-6
MIC5211
455mW
OT-23-6
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VJ1210A562JXAMB
Abstract: VJ1210Y Z5U 100V VJ1210U marking aeh
Text: STYLE VJ1210 Ceram ic Chip Capacitors VISHÄ ¡you* # 0111 NPO/COG, X7R and Z5U B « Capacitance k 8 11 T - “I |-*- 100 pcs. NPO/COG 50V 4700pF 5600pF 6800pF 8200pF .01nF VJ1210A472JXAMX VJ1210A562JXAMX VJ 1210A682JXAMX VJ 1210A822JXAMX VJ1210A103JXAMX VJ 1210A472JXAMB
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VJ1210
4700pF
5600pF
6800pF
8200pF
VJ1210A472JXAMX
VJ1210A562JXAMX
1210A682JXAMX
1210A822JXAMX
VJ1210A103JXAMX
VJ1210A562JXAMB
VJ1210Y
Z5U 100V
VJ1210U
marking aeh
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YTS4125
Abstract: A 1HF
Text: SILICON PNP EPITAXIAL TYPE YTS4125 U n i t in m n FOR GENERAL PURPOSE USE SWITCHING AND A MPLIFIER + 0.5 Í . 5 - 0.3 APPLICATIONS. + 0.25 ,1 5 -0 1 5 FEATURES: EE • Low Leakage Current : I ^ g Q = - 5 0 n A M a x . IE B O = _ 5 0 n A (Max.) @ Vjng=-20V
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OCR Scan
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PDF
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YTS4125
-50mA,
-50mA
-10mA
100MHz
YTS4125
A 1HF
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VJ0603A331
Abstract: VJ0603A120JXAMX VJ0603A4R7DXAMB VJ0603A151 VJ0603U VJ0603A221 VJ0603A101JXAMX vj0603 VJ0603A470JXAMX VJ0603A391
Text: STY LE VJ0603 Ceram ic Chip Capacitors NPO/COG % el Capacitance rymuw^i Bag lo o pcs. Mwwl H NPO/COG 50V 1.0pF VJ0603A1RODXAMX 1.2pF VJ0603A1R2DXAMX 1.5pF VJ0603A1R5DXAMX 1.8pF VJ0603A1R8DXAMX 2.2pF VJ0603A2R2DXAMX 2.7pF VJ0603A2R7DXAMX 3.3pF VJ0603A3R3DXAMX
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VJ0603
VJ0603A1RODXAMX
VJ0603A1R2DXAMX
VJ0603A1R5DXAMX
VJ0603A1R8DXAMX
VJ0603A2R2DXAMX
VJ0603A2R7DXAMX
VJ0603A3R3DXAMX
VJ0603A3R9DXAMX
VJ0603A4R7DXAMX
VJ0603A331
VJ0603A120JXAMX
VJ0603A4R7DXAMB
VJ0603A151
VJ0603U
VJ0603A221
VJ0603A101JXAMX
VJ0603A470JXAMX
VJ0603A391
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VJ0805A271
Abstract: VJ0805A391JXAMX VJ0805U VJ0805A181 VJ0805A220JXA VJ0805A220JXAMB VJ0805A6R8DXA 220pf npo VJ0805U103 VJ0805A100JXAMX
Text: STYLE VJ0805 Ceram ic Chip Capacitors V1SHAY NPO/COG ¡ f ir n * * * '} HJjldMAJI.UI Reel Capacitance 4 *~ * 500 pcs~ T —*-] |— NPO/COG 50 V 1.0pF 1.2pF 1.5pF 1.8pF 2.2pF 2.7pF 3.3pF 3.9pF 4.7pF 5.6pF 6.8pF 8.2pF 10pF 12pF 15pF 18pF 22pF 27pF 33pF 39pF
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VJ0805
100pF
120pF
150pF
180pF
220pF
270pF
330pF
390pF
470pF
VJ0805A271
VJ0805A391JXAMX
VJ0805U
VJ0805A181
VJ0805A220JXA
VJ0805A220JXAMB
VJ0805A6R8DXA
220pf npo
VJ0805U103
VJ0805A100JXAMX
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Untitled
Abstract: No abstract text available
Text: ¡ e lu o m TC1054 TC1055 TC1186 Semiconductor, Inc. 50mA, 100 mA, and 150 mA CMOS LDOs WITH SHUTDOWN AND ERROR OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ The TC1054, TC1055, and TC 1186 are high accuracy typically ±0.5% CMOS upgrades for older (bipolar) low
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PDF
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TC1054
TC1055
TC1186
TC1054,
TC1055,
TC1054)
TC1055)
TC1186)
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EIA-481-D peel
Abstract: No abstract text available
Text: MODEL TSM43 Cermet Trimmers VISHAY Surface Mount, 4.0mm Square Design, Multi Turn, Sealed, Industrial Grade FEATURES • Sealed to withstand board wash processing. • Pick and place centering design. • 4.0mm design meets EIA SMD standard trimmer footprint.
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PDF
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TSM43
MIL-STD-202,
100PPM/Â
21b24
00025M2
EIA-481-D peel
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sem 5025
Abstract: No abstract text available
Text: Semiconductor, Inc. TC 1223 TC 1224 50 mA AND 100 mA CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ The TC1223 and TC1224 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for
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PDF
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TC1223
TC1224
LP2980.
T-23A-5
SC-74A)
1223/TC1224-2
sem 5025
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TC1014
Abstract: LP2980 MIC5205 TC1107 TC1108 TC1173 TC1185 TC1186 TC1187 marking caa
Text: ¡ e l u o m Semiconductor, Inc. TC1014 50m A CMOS LDO W ITH SHUTDOW N AND REFERENCE BYPASS FEATURES G EN ER AL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1 014 is a high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as
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OCR Scan
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PDF
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TC1014
OT-23A-5
MIC5205
LP2980
SC-74A)
tc1014-2
TC1014
LP2980
TC1107
TC1108
TC1173
TC1185
TC1186
TC1187
marking caa
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Untitled
Abstract: No abstract text available
Text: lit m TECHNOLOGY LT1309 500kHz M icropower DC/DC Converter for Flash Memory FCflTUIKS DCSCRIPTIOn • 60mA Output Current at 12V from 3V or 5V Supply ■ Shutdown to 9 _iA ■ VPP VALID Comparator ■ Up to 85% Efficiency ■ Switching Frequency: 500kHz (Typical
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PDF
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LT1309
500kHz
500kHz
650uA
300mV
LT1106
LT1109-12
LT1109A-12
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LA50 marking transistor
Abstract: No abstract text available
Text: M IC 5203 80mA Low-Dropout Voltage Regulator G eneral Description Features The MIC5203 is a family ol efficient linear voltage regulators with very low dropout voltage typically 20mV at light loads and 300mV at 80mA and very low ground current (225jiA at
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MIC5203
300mV
225jiA
MIC5203can
500kHz.
15jiA.
LA50 marking transistor
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