1GM H Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1gm transistor

Abstract: 1GM sot-23 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LMBTA05WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

100-6 SOT-23

Abstract: 1GM x
Contextual Info: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage

Contextual Info: MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBTA06LT1G

Abstract: SMMBTA06LT1 canada ices class b Marking 1GM MMBTA05
Contextual Info: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

55C100B

Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Contextual Info: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,

1gm transistor

Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
Contextual Info: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is

MMBTA06

Contextual Info: MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-23 High Voltage Application Telephone Application Complementary to MMBTA56 A

Contextual Info: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Halogen free available upon request by adding suffix "-HF"

CQ92

Contextual Info: CENTRAL o.v,: ;• L: SEMICONDUCTOR o de ooocm? I v-f CQ92A CQ92B CQ92D CQ.92M feer- e^patpcto g MtuEG@5î&385@e&? (S r-E TRIAC 0.8 AMPS 100 T H R U 6 0 0 V O L T S Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-92 CASE

2N1794-1804

Abstract: 6Cp 80 624A2 Microsemi Catalog 2N1795 2N1796 2N1797 2N1798 2N1799 2N4371
Contextual Info: Silicon Controlled Rectifiers y 804: 2N4371 - 4 3 7 7 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes i— Î i 'i A B C D E F G H J K M N P R S T U r m i K t I i E D TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi

40C10

Abstract: 40C40B 40C60B 40C120B 40C20B 40C100B 40C80B
Contextual Info: Silicon Controlled Rectifier Series 40C Dim. Inches Minimum A B C D E F G H J K M N P R S Note 1: 1 /4 -2 8 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi Catalog Number 40C20B 40C40B 40C60B 40C80B 40C100B 40C120B M illim eter Maximum Minimum Maximum Notes

Contextual Info: Silicon Controlled Rectifier Series 051 Dim. Inches Minimum A B C D E F G H J K M N P R S Anode Gate —11— N Ü Cathode Note 1: 1 /4 -2 8 UNF-3A Note 2: Full thread within 2 1 /2 threads Microsemi Catalog Number 05102GOF 05104GOF 05106GOF 05108GOF 05110GOF

70C100B

Abstract: 70C100BF 70C120B 70C120BF 70C50B 70C50BF 70C60B 70C60BF 70C80B 70C80BF
Contextual Info: Silicon Controlled Rectifier Series 70C Dim Inches Minimum TO-208AD T0-83 A B C D E F G H J K M N P R S T U V W X Y Z AA TO-209AC (T0-94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead, add suffix ”IL" to catalog number

15106GOA

Abstract: 15102G0A 15104G0A 15106G0A 15108G0A 15110G0A 15112G0A
Contextual Info: Silicon Controlled Rectifier Series 15 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Z -Y r x " , v u t T T*=r ^ i i i H l TO-209AB T093 Notes: 1. 3/4-16 UNF-3A 2. Full thread within 2 1/2 threads 3. For insulated cathode lead, add suffix ”IL” to catalog number

SMD 1GM 2

Abstract: 1gm smd MMBTA06 SMD SOT-23 TYPE 1GM sot-23 1gm sot 23 sot-23 Marking 1h MMBTA05 MMBTA06 Marking 1GM
Contextual Info: Transistors IC SMD Type Driver Transistors MMBTA05, MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: Silicon Controlled Rectifiers 2N1794-1 804; 2N4371 - 4 5 7 7 Dim. Inches JJ Minimum ?= r c ^ 1 1 A B C D E F G H J K M N P R S T U “ 1 f . — ' ' ' I ’ Y f ï 1 rV - \A (TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi