Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
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1gm transistor
Abstract: 1GM sot-23 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
100mA
100mA,
100MHz
1gm transistor
1GM sot-23 transistor
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Untitled
Abstract: No abstract text available
Text: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
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1GM sot-23
Abstract: MMBTA05 MMBTA06
Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
1GM sot-23
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1GM sot-23
Abstract: MMBTA05 MMBTA06
Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
1GM sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
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LMBTA05WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05WT1G
LMBTA06WT1G
S-LMBTA05WT1G
S-LMBTA06WT1G
AEC-Q101
LMBTA05
LMBTA06
LMBTA05WT1G
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Marking 1GM
Abstract: marking 1h LMBTA06WT1G 1GM x
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05WT1G LMBTA06WT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. MAXIMUM RATINGS Rating 1 Symbol Value LMBTA05 LMBTA06 2 Unit Collector–Emitter Voltage V CEO 60
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LMBTA05WT1G
LMBTA06WT1G
LMBTA05
LMBTA06
SC-70
3000/Tape
10000/Tape
LMBTA05W
Marking 1GM
marking 1h
LMBTA06WT1G
1GM x
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1GM H
Abstract: Marking 1GM 1GM 5 LMBTA05LT1G LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO 60
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LMBTA05LT1G
LMBTA06LT1G
LMBTA05
LMBTA06
LMBTA05LT1G
OT-23
1GM H
Marking 1GM
1GM 5
LMBTA06LT1G
1gm sot 23
marking 1h
1gm marking
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smd z44
Abstract: Z441 SMD D88 y252 smd S4M 1Y0616
Text: ijklminoqrsqt Wv p 6 ! 9! 8 9"# "$%&' $ $&*+"&%":;< 9"= ">0?@ABC<D 9", "61(*+"4&*+@0&0+1#.%E 9"F ">5>>>5>>>"&4+%.#6&1,"*6-+"#60+ 9"G "HIJ",+.*61( 9"# "+04+%.#'%+"%.1(+K *&3"#+04K" )B>@LFF=MD $6($"#+04K" )B>@LFI>MD " ./#'.#&%K " 61"HH:K"" )B>@LFI>MD
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sY874
smd z44
Z441
SMD D88
y252
smd S4M
1Y0616
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
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MMBTA06LT1G
Abstract: MMBTA06LT1 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT1G MMBTA05LT3G MMBTA06 MMBTA06LT3G
Text: MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1
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MMBTA05LT1G,
MMBTA06LT1G
MMBTA05LT1
MMBTA06LT1
MMBTA05LT1/D
MMBTA06LT1G
MMBTA06LT1
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA05LT1G
MMBTA05LT3G
MMBTA06
MMBTA06LT3G
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MMBTA05
Abstract: MMBTA06LT1 MMBTA06LT3G MMBT MMBTA05LT1 MMBTA05LT1G MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1G
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
MMBTA05LT1/D
MMBTA05
MMBTA06LT3G
MMBT
MMBTA05LT1
MMBTA05LT1G
MMBTA05LT3
MMBTA05LT3G
MMBTA06
MMBTA06LT1G
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100-6 SOT-23
Abstract: 1GM x
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
OT-23
100-6 SOT-23
1GM x
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SMMBTA06LT1G
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage
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LMBTA05LT1G
LMBTA06LT1G
LMBTA05
LMBTA06
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Untitled
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L
MMBTA05L
MMBTA05LT1/D
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SMMBTA06LT1G
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
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SMMBTA06LT1G
Abstract: SMMBTA06LT1 canada ices class b Marking 1GM MMBTA05
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
canada ices class b
Marking 1GM
MMBTA05
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1gm transistor
Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
Text: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is
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MMBTA06
OT-23
MMBTA56
OT-23
MPSA06.
100mA,
100mA
100MHz
01-Jun-2004
1gm transistor
1GM sot-23 transistor
marking code 1GM
1GM j
MMBTA06
MPSA06
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A169
Abstract: No abstract text available
Text: 7908 Series □ m in D-SUB Crimp Type M aterial: Housing: 30% Glass filled PBT UL94V-0. Contacts: Brass. Terminal Plating: Selective plated. Recommend Wire: 24AWG to 28AWG. E lectrical C haracteristics: Current Rating: 1 AMP. Insulator Resistance: 5000MQ min. at D C 500V.
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UL94V-0.
24AWG
28AWG.
5000MQ
100mA.
A169
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40C120B
Abstract: 40C40B 40C60B 40C80B
Text: Silicon Controlled Rectifier Series 40C Dim In ch es Minimum A B C E F G H J K M N P R S Note 1: 1/4-28 UNF-3A Forward k Reverse Repetitive Blocking 1 .677 -1.200 .427 .115 - .200 .120 - .065 .145 .055 .025 .685 .770 1.250 .447 .155 .515 .249 .300 .667
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T0-208AC
40c20b
40C40B
40C60B
40C80B
40C120B
00V/usec.
f-120
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55C100B
Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Text: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,
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55C60B
55C60BF
55C80B
55C80BF
55C100B
55C100BF
55C120B
55C120BF
00V/usec.
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07102G0A
Abstract: 07104G0A 07105GOA 07106GOA
Text: Silicon Controlled Rectifier Series 071 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes 1 A B C E F G H J K 1.050 - 5.850 6.850 .797 .276 - M N P R TO—208AD TO-83 Note 1: 1/2 20 UNF-3A Note 2: Ful •ull thread within 2 1/2 threads Note 3: To specify package designation other than standard
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O-209AC
208AD
07102G0A
07104G0A
07105GOA
07106GOA
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