1GM 5 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1gm transistor

Abstract: 1GM sot-23 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LMBTA05WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Marking 1GM

Abstract: marking 1h LMBTA06WT1G 1GM x
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05WT1G LMBTA06WT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. MAXIMUM RATINGS Rating 1 Symbol Value LMBTA05 LMBTA06 2 Unit Collector–Emitter Voltage V CEO 60

1GM H

Abstract: Marking 1GM 1GM 5 LMBTA05LT1G LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO 60

smd z44

Abstract: Z441 SMD D88 y252 smd S4M 1Y0616
Contextual Info: ijklminoqrsqt Wv p 6 ! 9!8 9"# "$%&' $ $&*+"&%":;< 9"= ">0?@ABC<D 9", "61(*+"4&*+@0&0+1#.%E 9"F ">5>>>5>>>"&4+%.#6&1,"*6-+"#60+ 9"G "HIJ",+.*61( 9"# "+04+%.#'%+"%.1(+K *&3"#+04K" )B>@LFF=MD $6($"#+04K" )B>@LFI>MD " ./#'.#&%K " 61"HH:K"" )B>@LFI>MD

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

A169

Contextual Info: 7908 Series □ m in D-SUB Crimp Type M aterial: Housing: 30% Glass filled PBT UL94V-0. Contacts: Brass. Terminal Plating: Selective plated. Recommend Wire: 24AWG to 28AWG. E lectrical C haracteristics: Current Rating: 1 AMP. Insulator Resistance: 5000MQ min. at D C 500V.

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage

Contextual Info: CENTRAL SEMICONDUCTOR 1 • . . n a “n t . 3 oqdd3 5 t CS92 SERIES v e -tl._ SILICON CONTROLLED RECTIFIER 0.8 AMPS £ . . i i^?efiSä5G&/'Gr €;GLVj. € e B B £ ü ’CSS §eRLi.ce@BieaK;eß@[i5e @ sp . 100 THRU 800 VOLTS JEDEC T0-92 CASE Central

Contextual Info: M A X IM U M RATINGS Symbol MMBTA05 MMBTA06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage v EBO 4.0 Vdc • c 500 mAdc Rating Collector Current — Continuous MMBTA05LT1 MMBTA06LT1* CASE 318-07, STYLE 6

CS92A

Abstract: CS92B CS92D CS92M CS92N
Contextual Info: CENTRAL SEMICONDUCTOR CS92 SERIES 1 ' . . V « -, . SILICON CONTROLLED RECTIFIER 0.8 AMPS l£. • t L:ceßB55 iSGÖ/C C iG LV i. ©BBSC’CSS §eGLeCe@Biä^eseß©p e@s’0 . Central Sem iconductor Corp. 100 THRU 800 VOLTS JEDEC TO-92 CASE 1 4 5 A dam s Avenue

55C100B

Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Contextual Info: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,

07102G0A

Abstract: 07104G0A 07105GOA 07106GOA
Contextual Info: Silicon Controlled Rectifier Series 071 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes 1 A B C E F G H J K 1.050 - 5.850 6.850 .797 .276 - M N P R TO—208AD TO-83 Note 1: 1/2 20 UNF-3A Note 2: Ful •ull thread within 2 1/2 threads Note 3: To specify package designation other than standard

1GM sot-23 transistor

Contextual Info: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage

x-ray film illuminator

Abstract: 2WAY dashpot damping 751168
Contextual Info: Issued March 1997 232-4184 Data Pack G Dashpot dampers Data Sheet RS stock numbers 751-146, 751-152, 751-168, 751-174, 751-180, 751-196, 751-203 Applications ● Prevent damage to sensitive equipment from shock and vibration ● Reduce impact noise ● Damping extreme movements

CQ92

Contextual Info: CENTRAL o.v,: ;• L: SEMICONDUCTOR o de ooocm? I v-f CQ92A CQ92B CQ92D CQ.92M feer- e^patpcto g MtuEG@5î&385@e&? (S r-E TRIAC 0.8 AMPS 100 T H R U 6 0 0 V O L T S Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-92 CASE

Contextual Info: UNCONTROLLED DOCUMENT 12.70 [0.500: REV, PIN 18 r 8.00 [0.315] PIN 10 4 -.5 0 i0 .7 5 A E.C.N. PART NUMBER REV. L D D —A 5 6 4 6 R I A NUMBER AND REVISION COMMENTS t0.177i0.030: ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T 17.00 [D.É.69: PIN P IN 15,24 [0,600]

MMBTA05LT1G

Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1 MMBTA06LT1G MMBTA06LT3
Contextual Info: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LDM — 0 8 2 88 N REV, A 5 .9 0 PIN 16 E.C.N. NUMBER AND REVISION COMMENTS [0,177] MIN PEAK WAVELENGTH PIN 1 C 0 .7 9 5 : 15.00 [0 .5 9 1 ] 0 0 .5 1 [0 .0 2 0 ] 1 6 COL 20.20 [0 .7 9 5 ] MAX 1 2.2 2.6 EMITTED COLOR: