modules
Abstract: fet small signal
Text: MwT-0206L-1G1/0206U-1G1 2.0-6.0 GHz Feedback Amplifier Module www.mwtinc.com Email: info@mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 16.0 dB SMALL SIGNAL GAIN 30.0 dB REVERSE ISOLATION 17.0 dBm P-1dB 4.5 dB NOISE FIGURE Typical Input/Output Return Loss dB
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MwT-0206L-1G1/0206U-1G1
modules
fet small signal
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IL 505
Abstract: No abstract text available
Text: MwT -0206L-1G1/0206U-1G1 2.0-6. OGHz FEEDBACK AMPUFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510651-6700 FAX510-651-2208 TYPICAL SPECIFICATIONS @ 25°C n n • H U LJ • 16.0 dB SMALL SIGNAL GAIN • 30 dB REVERSE ISOLATION • 17.0dBm P-1dB
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-0206L-1G1/0206U-1G1
FAX510-651-2208
MWAVS035
IL 505
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Untitled
Abstract: No abstract text available
Text: MWT-0206L-1G1/0206U-1G1 M iss XJIHiyii is ! i^lpllllililll Jliiiplillfl? MppSi® Email: info@mwtinc.com w w w .m w tin c.co m TYPICA L SPECIFICATIONS AT 25 eC • 16.0 dB SMALL SIGNAL GAIN • 30.0 IB REVERSE ISOLATION • 17.0 dBm P-ldB • 4.5 dB NOISE FIGURE
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MWT-0206L-1G1/0206U-1G1
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Untitled
Abstract: No abstract text available
Text: 1G1 THRU 1G7 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound
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MIL-STD-202,
MIL-STD-750D
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Untitled
Abstract: No abstract text available
Text: 1G1 thru 1G7 1.0 Amp. Glass Passivated Junction Rectifiers Voltage Range 50 to 1000 Volts Forward Current 1.0 Ampere Features Low forward voltage drop High current capability High reliability High surge current capability 3mm miniature body
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MIL-STD-202,
250oC/10
125oC
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Untitled
Abstract: No abstract text available
Text: 1G1 THRU 1G7 GLASS PASSIVATED RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 1000Volts 1.0 Ampere Glass passivated chip junction R-1 Low forward voltage drop .025 0.6 Low reverse leakage .021(0.5) High forward surge current capability .787 High temperature soldering guaranteed:
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1000Volts
UL94V-0
MIL-STD-202E
300us
50mVp-p
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Untitled
Abstract: No abstract text available
Text: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER 1G1 THRU 1G7 VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES • • • • • Glass passivated chip junction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed:
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UL94V-0
MIL-STD-202E
007ounce,
300us
50mVp-p
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942-M96-S0052
Abstract: 942-M3A-2D-1G1-65E
Text: PK 104091-11 942-M0/3A-2D-1G1-65E/130E/180E/220S/300E/M96 Ultrasonic Distance Sensor Ultraschall Abstandssensor Capteurs Ultrasoniques ! WARNING ! PERSONAL INJURY DO NOT USE these products as safety or emergency stop devices, or in any other application where failure
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-M0/3A-2D-1G1-65E/130E/180E/220S/300E/M96
RS-232
942-M96-S0052
942-M3A-2D-1G1-65E
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QTH-090-01-X-D-LC
Abstract: QTH-30-XX-D-XX QTH-090-01-X-D-A-RT1 QTHH-30-XX-D-XX QTH-30-01-D-XX samtec QTH - 150 T-1S60-09-X QTH-30-01-D-XX-A QTH-090-01-X-D-GP QTHH-030-04-D-XX
Text: REVISION AV TABLE 1 STYLE "A" "B" BODY -LC BODY (-A) GROUND PLANE TERMINAL MATED HEIGHT WITH QSH-01 -01 .1680[4.267] .1600[4.064] QTH-30-01-D-XX QTH-30-01-D-XX-A T-1G1-01-X T-1S39-01-X .197[5.00] REF -02 .2861[7.267] .2781[7.064] QTH-30-02-D-XX QTH-30-02-D-XX-A
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QTH-30-01-D-XX
QTH-30-01-D-XX-A
T-1G1-01-X
T-1S39-01-X
QTH-30-02-D-XX
QTH-30-02-D-XX-A
T-1G1-02-X
T-1S59-02-X
QSH-01
T-1R36-01-F
QTH-090-01-X-D-LC
QTH-30-XX-D-XX
QTH-090-01-X-D-A-RT1
QTHH-30-XX-D-XX
QTH-30-01-D-XX
samtec QTH - 150
T-1S60-09-X
QTH-30-01-D-XX-A
QTH-090-01-X-D-GP
QTHH-030-04-D-XX
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Untitled
Abstract: No abstract text available
Text: 1G1 thru 1G7 SVM5EMI semiconductor 1.0 Amp. Glass Passivated Junction Rectifiers Voltage Range 50 to 1000 Volts Forward Current 1.0 Ampere Features ♦ ♦ ♦ ♦ ♦ Lo w fo rw a rd v o lta g e d ro p H igh c u rre n t c a p a b ility High reliab ility High su rg e c u rre n t c a p a b ility
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MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: OctoGig TM An ultra-high speed, 10 Gb Ethernet connector for commercial aviation, military aircraft and marine applications, OctoGig is smaller, lighter, easier to install and offers significant increases in data transfer rates compared to existing solutions on the market.
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1G1 l
Abstract: No abstract text available
Text: 54AC11208,74AC11208 DUAL M IN E TO 4-LINE CLOCK DRIVERS WITH 3-STATE OUTPUTS _ D3459. MARCH 1990 54AC11208 . . . J PACKAGE Low Skew Propagation Delay Specifications for Clock Driving Applications 74AC11208 . . . DW OH N PACKAGE
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54AC11208
74AC11208
D3459.
500-mA
300-mil
1G1 l
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Untitled
Abstract: No abstract text available
Text: 54AC11208, 74AC11208 DUAL 1-LINE TO 4-LINE CLOCK DRIVERS WITH 3-STATE OUTPUTS _ 54A C 1 12 0 8 . . . J P A C K A G E Low Skew Propagation Delay S p ecifications fo r C lock Driving A pplications 7 4A C 1 12 0 8 . . . D W O R N P A C K A G E
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54AC11208,
74AC11208
500-mA
300-mil
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MT4JSF6464HY-1G1B1
Abstract: MT41J64M16 MT4JSF6464HY-1G1 DDR3 ECC SODIMM Fly-By Topology mt4jsf6464 micron DDR3 SODIMM address mapping edge connector
Text: 512MB x64, SR 204-Pin DDR3 SDRAM SODIMM Features DDR3 SDRAM SODIMM MT4JTF6464HY – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • DDR3 functionality and operations supported as per component data sheet
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512MB
204-Pin
MT4JTF6464HY
204-pin,
PC3-10600,
PC3-8500,
PC3-6400
09005aef82b2f090/Source:
MT4JSF6464HY-1G1B1
MT41J64M16
MT4JSF6464HY-1G1
DDR3 ECC SODIMM Fly-By Topology
mt4jsf6464
micron DDR3 SODIMM address mapping edge connector
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Untitled
Abstract: No abstract text available
Text: 54ACT11208, 74ACT11208 DUAL 1-LINE TO 4-LINE CLOCK DRIVERS WITH 3-STATE OUTPUTS TI0196— D 3460. APRIL 1990 54ACT11208 . . . J PACKAGE 74ACT11208 . . . DW OR N PACKAGE • Inputs are TTL-Voltage Compatible Low Skew Propagation Delay Specifications for Clock Driving Applications
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54ACT11208,
74ACT11208
TI0196--
500-mA
300-mil
I0198--
D3460,
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g5lf
Abstract: 6-1437504-6 8080-1G15 8080-1G1 2-1437504-9 2-1437504-9
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR DESCRIPTION ECO —07 —01 221 DATE DWN 08F E B 07 MB APVD SPECIFICATIONS: MATERIALSINSULATOR: U L 9 4 V - 0 SEE TABLE FOR MATERIAL
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31MAR2000
g5lf
6-1437504-6
8080-1G15
8080-1G1 2-1437504-9
2-1437504-9
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DDR3 reset circuit
Abstract: MO-269 UDIMM thermal resistance MT8JTF12864AY
Text: 1GB, 2GB x64, SR 240-Pin DDR3 SDRAM UDIMM Features DDR3 SDRAM UDIMM MT8JTF12864AY – 1GB MT8JTF25664AY – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • DDR3 functionality and operations supported as per
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240-Pin
MT8JTF12864AY
MT8JTF25664AY
240-pin,
PC3-10600,
PC3-8500,
PC3-6400
09005aef82b21119/Source:
09005aef82b2112c
JTF8c128
DDR3 reset circuit
MO-269 UDIMM thermal resistance
MT8JTF12864AY
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1G1 l
Abstract: D3460
Text: 54ACT11208, 74ACT11208 DUAL 1-LINE TO 4-LINE CLOCK DRIVERS WITH 3-STATE OUTPUTS _ D3460. AP R IL 1990 54A C T 11 2 08 . . . J P A C K A G E Inputs are TTL-Voltage C om patible 7 4 A C T 11 2 08 . . . D W OR N P A C K A G E Low -Skew Propagation Delay TO P V IE W
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54ACT11208,
74ACT11208
D3460.
500-m
901I1.
1G1 l
D3460
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8275 crt controller
Abstract: b636 LCD 480X320 MC68K MC68000 MC68030 SED1354 VR4102 RAMDAC Digital IO 640X240
Text: PF887-02 Color Graphics LCD/CRT Controller • DESCRIPTION The SED1354 is a low cost, low power color/monochrome LCD/CRT controller interfacing to a wide range of CPUs and LCDs. The SED1354 architecture is designed to meet the requirements of embedded markets such as Office
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PF887-02
SED1354
640x480
LINE480
8275 crt controller
b636
LCD 480X320
MC68K
MC68000
MC68030
VR4102
RAMDAC Digital IO
640X240
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5A SF
Abstract: SF 127 C
Text: SF1G1 THRU SF1G7 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Features Superfast recovery times Low forward voltage, high current capability Hermetically sealed Low leakage High surge capability Plastic package has Underwriters Laboratories
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MIL-STD-202,
MIL-STD-750D
5A SF
SF 127 C
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IF1322
Abstract: IN1322B NJ132L DIFFERENTIAL/VCW23-5G-2-
Text: 8/2014 IF1322A, IN1322B N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ ∙ Absolute maximum ratings at TA = 25oC Low Noise, High Gain Amplifier Reverse Gate Source & Gate Drain Voltage -20V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation
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IF1322A,
IN1322B
480mW
-65oC
150oC
IF1322
IF1322
IN1322B
NJ132L
DIFFERENTIAL/VCW23-5G-2-
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JESD21-C
Abstract: JESD-21C
Text: 1GB, 2GB x72, ECC, SR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT9JSF12872PY – 1GB MT9JSF25672PY – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • DDR3 functionality and operations supported as per
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240-Pin
MT9JSF12872PY
MT9JSF25672PY
240-pin,
PC3-10600,
PC3-8500,
PC3-6400
09005aef829eedac/Source:
09005aef829eede3
JTF9C128
JESD21-C
JESD-21C
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Untitled
Abstract: No abstract text available
Text: 54AC11208, 74AC11208 DUAL 1-LINE TO 4-LINE CLOCK DRIVERS WITH 3-STATE OUTPUTS T I0 1 9 9 — D 3 4 5 9 , M A R C H 1 9 9 0 Low Skew Propagation Delay Specifications fo r Clock Driving Applications 5 4A C 11 2 08 . . . J P ACKA G E 7 4A C 11208 . . . D W OR N P ACKA G E
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54AC11208,
74AC11208
500-m
300-mil
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runway
Abstract: No abstract text available
Text: HER1G1 THRU HER1G7 MINIATURE HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound
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MIL-STD-202,
runway
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