1F90 Search Results

ED36

Abstract: eb345 DSP56300 DSP56302 DSP56309 SC11 SC12
Contextual Info: MOTOROLA Semiconductor Products Sector Engineering Bulletin Functional Differences Between The 1F90S Mask of the DSP56302 and the 0J17D Mask of the DSP56309 This document summarizes the differences between the DSP56302 1F90S mask revision and the DSP56309, Rev A

ED36

Abstract: DSP56300 DSP56302 ES46 1F90S
Contextual Info: Chip Errata DSP56302 Digital Signal Processor Mask: 1F90S General remark: In order to prevent the usage of instructions or sequences of instructions that do not operate correctly, the user is encouraged to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of

ED36

Abstract: DSP56300 DSP56302 DSP56309 EB345 SC11 SC12
Contextual Info: Freescale Semiconductor Engineering Bulletin EB345 Rev. 2, 10/2005 Functional Differences Between The 1F90S Mask of the DSP56302 and the 0J17D Mask of the DSP56309 This document summarizes the differences between the DSP56302 1F90S mask revision and the DSP56309, Rev A

DSP56300

Abstract: DSP56302 ES46
Contextual Info: Freescale Semiconductor, Inc. Chip Errata DSP56302 Digital Signal Processor Mask: 1F90S Freescale Semiconductor, Inc. General remark: In order to prevent the usage of instructions or sequences of instructions that do not operate correctly, the user is encouraged to use the “lint563” program to identify

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41UG Revision History Date Revision 2007/7/24 1 First Release Table of Contents TMP88CH41UG 1.1 1.2 1.3 1.4 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AT49BV320D

Abstract: AT49BV320DT SA70 AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88F846UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/8 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88F846UG 1.1 1.2 1.3 1.4

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88FH41UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/7 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88FH41UG 1.1 1.2 1.3 1.4

Contextual Info: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

LHF00L14

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

FY520

Abstract: FW533 MT28F322D18
Contextual Info: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

M28W320BB

Abstract: M28W320BT
Contextual Info: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■

AT26DF161A-SSU

Abstract: AT26DF161A AT26DF161A-MU AT26DF161A-SU
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

SA70

Abstract: 2SA31
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

M29DW323D

Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

M36DR432AD

Abstract: M36DR432BD
Contextual Info: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

mx29lv320ttc

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention