1ER2 Search Results

Scans-048

Abstract: SU16 SU167 DSAGER00063
Contextual Info: Vorläufige technische Baten SU 167 Bt-apn-lieistungsseW.ftteajnsiefios für Schalteetzteile ia Gesäten der Industrie- und Konsumgüterelektronik« Kollektor a m Sshäas Massai * 22 g FOOA7B9 Grenzwerte. ^ s 25 °0 Kollekbor-Bnitter-Spitzenspamung %S 3 0

Centronic 36 package

Abstract: 17PM K011 04V applications of microprocessor in printer CONNECTOR CENTRONIC 34 pin TL16C550 54LS245 74LS245 TL16C450 TL16C452 TL16C550B
Contextual Info: TL16C552A, TL16C552AM DUAL ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO S L L S 18 9 B -N O V E M B E R 1994 - REVISED JUNE 1997 IBM PC/AT Compatible Programmable Serial Interface Characteristics for Each Channel: - 5-, 6-, 7-, or 8-Bit Characters - Even, Odd, or No Parity Bit Generation

SSH70N10A

Contextual Info: Advanced SSH70N10A P o w e r MOSFET FEATURES bv • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea RDS on = 0.023 a lD = 70 A

15SB04S

Abstract: 5SB04S 15SB03S
Contextual Info: NEC 15A SHOTTKY BARRIER DIODE ELECTRO« DEVICE 15S B03S and 15SB03S,1 5SB04S OUTLINE DRAWING 15S B04S are s h o ttk y b a rrie r d io d es o f w h ic h U n it: m m fo rw a rd average c u rre n t is 1 5 A . FEATURES • L o w fo rw a rd volta g e d ro p .

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

HR-18

Contextual Info: Bipolar IC For Power Factor Enhancement FA5331 P M • Description T he FA5331 P{M ) is a control IC for an active filter to enhance the power factor. This IC uses the average current control system to ensure stable operation. With this system, a power factor of 99% or better can be achieved.

y2932

Contextual Info: TL16C550C ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH AUTOFLOW CONTROL _ SLLS177C-MARCH 1994 - REVISED MARCH1997 • • • • • • • • • • Programmable Auto-RTS and Auto-CTS In Auto-CTS Mode, CTS Controls Transmitter In Auto-RTS Mode, RCV FIFO Contents and

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

SK200DA120D

Abstract: mikron
Contextual Info: se MIKRON Values Units lc = 1 A , Vbe = - 2 V 1200 V ro < Maximum Ratings 1200 V 1200 V 7 V Conditions VcEVsus o < V ebo II VcBO O VcEV o ii LU CD m II I Symbol lc D. C. 2 00 A If = - l c D. C. 200 A Ib 10 A Ptot Tease = 2 5 ° C 1560 W Tvj - 4 0 . . . + 150

LGT671M

Contextual Info: SIEMENS TOPLED Bright Green Die LG T671 Besondere Merkmale • • • • • • • Gehäusebauform: P-LCC-2 Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterteuchtung, Lichtleiter- und Linseneinkopplung für alle SMT-Bestück- und Löttechniken geeignet

NC243

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge ^ D S o n = 4.0 Q lD = -1.53 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |jA (Max.) @ VDS = -250V

SSS7N80A

Abstract: mosfet yb
Contextual Info: Advanced SSS7N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — 800 V ^ D S o n = 1 . 8 Q. D S S lD = ■ E xtended S afe O pe ra ting A rea

Goldstar prime 2

Abstract: goldstar gm16c450 prime2 prime3b Goldstar prime GOLDSTAR GD75188 GM16C550 gm82c803a 8086 assembly prime number GM82C803
Contextual Info: GM82C803A/B GoldStar FDC, UARTS with FIFO, EPP/ECP, IDE Controller GOLDSTAR ELECTRON CO., LTD. General Description Features T he G M 82C803A/B chip rep laces w ith a single 100 pin chip, a floppy d isk co n tro ller FDC w ith data separator, tw o UARTs(GM16C550), one IEEE

synchronous inverter schematic ims 1600

Abstract: elcot tv kit circuit diagram iosq 050 pin diagram for IC cd 1619 cp in fm smd code transistor sd IL44 Z ET 439 IL44 transistor ksv3100a UTM ceramic RESISTOR 390 210-9
Contextual Info: CONFIGURABLE DESIGN PLD 1 S i 2 0 Regan Brampton, Tel: (4 1 6 Fax: (4 1 6 ) 9 • Si APPLICATION BOOK F P GA 9 LOGIC 4 Ì 4(I M A S S O C IA T E S Road, Unit 14 O ntario L 7 A 1C3 8 4 0 -6 0 6 6 8 4 0 -6 0 9 1 • GATE A R R A Y 1 9 9 5 iilmËL Atmel Programmable Logic Devices (PLDs)

Contextual Info: ATV5000/L Features • • • • • • Advanced Programmable Logic Device - High Gate Utilization Flexible Interconnect Architecture - Universal Routing Flexible Logic Cells -128 Flip-Flops and 52 Latches Multiple Flip-Flop Types - Synchronous or Asynchronous Registers

1348 transistor

Abstract: 1346 transistor transistor 1346
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES PHN103 PINNING - SOT96-1 S08 • High-speed switching PIN SYMBOL • No secondary breakdown 1 n.c • Very low on-state resistance. 2 s source 3 s source APPLICATIONS

buT18

Abstract: but18a
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-22QAB package. APPLICATIONS • Converters • Inverters 1 « • Switching regulators

LM6141

Abstract: 10v regulator 7910 lm814 Ior 4020 transistor 29 amp LM6141wm LM124 LM185 LM614 LM614CN
Contextual Info: LM614A/LM614 NATL SEHICON» LINEAR 22E T> bS01154 □ □bfl'OQ b National Semiconductor 7“- 7 9 - / 0 LM614A/LM614 Quad Operational Amplifiers and Adjustable Reference General Description Features (Guaranteed over temperature & supply) The quad operational amplifiers are a versatile commonmode-to-the-negative-supply ("single supply") type similar

Contextual Info: B 41 507 B 43 507 Capacitors with Solder Pins LL Grade Especially high volumetric efficiency Construction • Charge-discharge proof, polar • Aluminum case, fully insulated • Overload protection by preset break point in case • Solder pin mounting on printed circuit boards,

S6363

Contextual Info: _ SÌ1307 New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS(V) b (A) r D S (o n) ( Q ) 0.290 @ VGS = - 4 5 V -1 2 ±0.91 0.435 @ V q s = -2 .5 V ± 0 .7 4 0.580 V qs = -1 .8 V ± 0 .6 4 SOT-323 SC-70 (3-LEADS) xx £ Lot Traceability

Contextual Info: SÌ4410DY •y y y - — — — — Vishay Siliconix N-Channel 30-V D-S MOSFET V o slV I R d s {om> lD (A) 0.0135 e VG S = 10 V ±10 0.020 @ V o s = 4.5 V ±8 30 D p SO-8 J i N-Channei MO SFET

Contextual Info: IRFS650A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 15.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V

Contextual Info: 33 HARRIS CP Series S E M I C O N D U C T O R Connector Pin Metal-Oxide Varistors M arch 1995 F e a tu re s • Unique Coaxial Design and Mounting Arrangem ent • Designed to be Integrated Within Standard Connector Assemblies • Self Contained Tubular Construction

C65SC22

Abstract: "Versatile Interface Adapter" G65SC22-6 PBQ Batteries G65SC22 G65SC22-1 G65SC22-2 G65SC22-3 G65SC22-4 65sc22
Contextual Info: A G65SC22 CMD Microcircuits_ _ CMOS Versatile Interface Adapter With Interval Tim er/Counters Features • C M O S process technology for low pow er consum ption • Fully com patible w ith N M O S 6522 devices • Low pow er consum ption allows battery-pow ered operation