1CS MARKING CODE Search Results

1CS MARKING CODE Result Highlights (5)

Part	Manufacturer	Description
54LS190/BEA	Rochester Electronics LLC	54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA)
5447/BEA	Rochester Electronics LLC	5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA)
5446/BEA	Rochester Electronics LLC	5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA)
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)
54HC221AJ/883C	Rochester Electronics LLC	54HC221AJ/883C - Dual marked (5962-8780502EA)

1CS MARKING CODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
512M 29 Abstract: 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking Contextual Info: NOR-Flash Code Information 1/5 Last Updated : August 2009 K8XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 - De-Multiplexed Burst 12 : 512, 16Bank 26 : 128M, 8M / 16Bank / 66) 27 : 128M, 8M / 16Bank / 77) 28 : 128M, 8M / 16Bank 29 : 128M, 8M / 16Bank / 88)	Original	16Bank 16Bank 512M 29 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking	PDF
Contextual Info: HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 03. ’03 Preliminary 1.1 Change process code May. 13. ’03 -B This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64UD16322A 32Mbit HYUD16322A	PDF
HYUD16162 Abstract: HYUD16162B HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64UD16162B 16Mbit HYUD16162B HYUD16162 HYUD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I	PDF
HYUD16162B Abstract: HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 3. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64UD16162B 16Mbit 16bits. HYUD16162B HYUD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I	PDF
HYUD16162B Abstract: HYUD16162 Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64UD16162B 16Mbit HYUD16162B HYUD16162B HYUD16162	PDF
1CS MARKING Abstract: TCS1 Contextual Info: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01	Original	HY64UD16162M HYUD16162M 1CS MARKING TCS1	PDF
HY64UD16162B Abstract: HYUD16162 Contextual Info: HY64UD16162B-DF P xxx Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ’03 1.2 Add to Lead Free Product Mar. 09. ‘04	Original	HY64UD16162B-DF HY64UD16162B-DFxxxP HY64UD16162B-DFPxxx DESCR162B HY64UD16162B HYUD16162	PDF
Contextual Info: HY64UD16162B- P Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ’03 1.2 Add to Lead Free Product Mar. 09. ‘04 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64UD16162B- 16Mbit HY64UD16162B HYUD16162B	PDF
Contextual Info: HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul. 18. ’ 01 Preliminary Oct. 06. ’ 01	Original	HY64UD16322M HYUD16322M	PDF
VL15 Contextual Info: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01	Original	HY64UD16162M 100uA HYUD16162M VL15	PDF
HYUD16162 Abstract: HYUD16162M HY64UD16162M HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M-DF85I Contextual Info: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’01 Preliminary 1.1 Revised Jul. 03. ’01 Preliminary Jul.18. ’01 Preliminary Oct. 07. ‘01 Preliminary	Original	HY64UD16162M HYUD16162M HYUD16162 HYUD16162M HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M-DF85I	PDF
transistor bc 577 Abstract: transistor bc 103 Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code	OCR Scan	Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103	PDF
transistor bc 499 Abstract: 1CS K2 marking 1cs transistor Bc 580 Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code	OCR Scan	Q62702-C2372 OT-363 BC847S transistor bc 499 1CS K2 marking 1cs transistor Bc 580	PDF
transistor Bc 580 Abstract: marking 1cs 847S transistor bc 100 Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration	Original	OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100	PDF

Contextual Info: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64SD16162B 16Mbit 16bits. HYSD16162B	PDF
Contextual Info: HY64LD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01	Original	HY64LD16162M 100uA HYLD16162M	PDF
HYNIX lot date code Abstract: 1CS MARKING HY64SD16162B HY64SD16162B-DF85E HY64SD16162B-DF85I HYSD16162B Contextual Info: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64SD16162B 16Mbit 16bits. HYSD16162B HYNIX lot date code 1CS MARKING HY64SD16162B-DF85E HY64SD16162B-DF85I HYSD16162B	PDF
Contextual Info: HY64LD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ‘ 01 Preliminary Oct. 06. ’ 01	Original	HY64LD16322M HYLD16322M	PDF
HY64LD16162M Abstract: HY64LD16162M-DF85E HY64LD16162M-DF85I Contextual Info: HY64LD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01	Original	HY64LD16162M HYLD16162M HY64LD16162M-DF85E HY64LD16162M-DF85I	PDF
HY64SD16162B Abstract: HY64SD16162B-DF85E HY64SD16162B-DF85I Contextual Info: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not	Original	HY64SD16162B 16Mbit 16bits. HYSD16162B HY64SD16162B-DF85E HY64SD16162B-DF85I	PDF
6822 n9 Abstract: 700TC gddr3 schematic cmd transistor marking cy SEN 1327 W641GG2JB CY 6152 Contextual Info: W641GG2JB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7	Original	W641GG2JB A01-002 6822 n9 700TC gddr3 schematic cmd transistor marking cy SEN 1327 W641GG2JB CY 6152	PDF
5b1 transistor Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type	OCR Scan	Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor	PDF
HYSD16322B Abstract: hynix hy Contextual Info: HY64SD16322B-DF Series Document Title 2Mx16 bit Low Low Power 1T/1C Pseudo SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jan. 2004 Preliminary Apr. 2005 Preliminary 1.0 Addition : Power-up timing diagram page 06 This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any	Original	HY64SD16322B-DF 2Mx16 HYSD16322B 85-85ns HYSD16322B hynix hy	PDF
Contextual Info: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5	Original	BC847S EHA07178 OT363	PDF

1CS MARKING CODE Search Results

1CS MARKING CODE Result Highlights (5)

1CS MARKING CODE Datasheets Context Search

512M 29

HYUD16162

HYUD16162B

HYUD16162B

1CS MARKING

HY64UD16162B

VL15

HYUD16162

transistor bc 577

transistor bc 499

transistor Bc 580

HYNIX lot date code

HY64LD16162M

HY64SD16162B

6822 n9

5b1 transistor

HYSD16322B