1CC3 Search Results

tc5118180

Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Contextual Info: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit

M5M5118P-15

Abstract: M5M5118P 16384-BIT M5M51 si1515 M5M5118
Contextual Info: M ITSUBISHI L S Is M5M5118P, -15 16384-BIT 2048-W O R D B Y 8-BIT C M O S STATIC RAM D ESCRIPTION The M5M 5118P series of 2048-word by 8-bit asynchronous PIN C O NFIG URATIO N (TOP V IEW ) silicon gate C M O S static R A M operates on a single 5V power supply and is designed for easy use in applications

J-Lead, QFP ceramic

Abstract: PQFP 176 J-Lead
Contextual Info: EPM5192A EPLD □ Features □ □ Preliminary Information □ □ □ High-performance, second-generation MAX 5000 EPLD developed on an advanced 0.65-m icron CM OS EPROM process High-speed upgrade for existing EPM 5192 designs High-speed multi-LAB architecture

Contextual Info: TOSHIBA THL64V4075ATG-4,-5,-4S,-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4075ATG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165AFT/AFTS DRAMs on a printed circuit board. This module is optimized for applications

Contextual Info: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:

M5M51

Abstract: M5M5118FP M5M5118FP-15
Contextual Info: M ITSUBISHI LSIs M5M5118FP, -15 1 6 3 8 4 -B IT 2 0 4 8 -W 0 R D B Y 8 -B IT CM O S S TA TIC RAM DESCRIPTION T h e M 5 M 5 1 1 8 F P series o f 2 0 4 8 -w o rd by 8 -b it a syn ch ro­ PIN CONFIGURATION (TOP VIEW) nous silicon gate C M O S static R A M operates on a single 5 V

K4164

Abstract: 5k4164 block stsu 536-WORD RAC120 M5K4116P msk4164 M5K4164AND-12 M5K4164AND-15 K4164A
Contextual Info: M ITSU B ISH I L S Is M5K4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b ric a te d w ith the high pe rform ance N-channel silicongate

Contextual Info: M ITSU BISHI LSIs MH25636XJ,SXJ-8,-10 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 262144-w ord by 3 6 -b it dynamic RAM module. This consists of two industry standard 256K x 18bit dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package. This

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET MEMORY 4 x 5 1 2 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811643242A-125/-100/-84/-67 CMOS 4-BANK x 524,288-WORD x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811643242A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: T T WPF29640-120GVI WHITE /MICROELECTRONICS 64M BYTE 4x4Mx32 FLASH (5VSupply;5V Program) SIMM MODULE A D VA N C ED * FEATURES • A ccess Tim e of 120ns ■ 10,000 E rase/Program Cycles Packaging: • B lock Erase/Program Lockout du ring Pow er T ra n sitio n s

Contextual Info: @ LG Semicon. Co. LTD Features Description The GMM7322200BNS/SG is an 2M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board w ith decoupling capacitors. The GMM7322200BNS/SG is

Contextual Info: IBM0364404 IBM0364804 IBM0364164 IBM03644B4 Prelim inary 6 4 M b S y n c h r o n o u s D R A M - D ie R e v i s i o n B • M ultiple Burst Read with Single W rite O ption Features • A utom atic and C ontrolled Precharge C om m and • High Perform ance:

TI 27c010

Contextual Info: A p ril 1 9 9 8 S E M I C O N D U C T O R TM 1,048, 576-Bi t 128K FM27C010L 1,048,576-Bit (128Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The F M 2 7 C 0 1 0 isa low -p o w e r1 Mbit, 5V-only on e-tim e-prog ram m able (OTP) read-only m em ory (EPROM), organized into 128K

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

27C512N

Contextual Info: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into

Contextual Info: M I T SUBI SHI M E M O R Y C A R D D Y N A MI C RAM CARDS 32/36-bit Data Bus MF14M1-L1XATXX MF14M1-L2X AT X X D ynam ic R A M C ard MF18M1-L1XATXX MF18M1-L2X A T X X Connector Ty pe Two-piece 88-pin DESCRIPTION T hese DRAM CARDs are developed based on J E I D A D R A M C A R D G U I D E L I N E V e r. 2. 0.

M5M44100AJ

Abstract: 09A08 M5M44100AJ10 MSM44100AJ
Contextual Info: MITSUBISHI LSIs MH4M09A0J-6,-7,-8,-10/ MH4M09A0JA-6,-7,-8,-10 FAST PAGE MODE 4194304-WQRD BY 9-BIT DYNAMIC RAM DESCRIPTION T h e M H 4M 09A 0J.JA is 4194304 w o rd x 9 bit dynamic RAM and consists of nine industry standard 4M x 1 dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package provides

Contextual Info: MITSUBISHI LSI* M H 12908T N A-85,-10,-12,-IS 1 0 4 « 5 7 e -B IT < 1 3 1 0 7 2 -« » 0 R D BY S -B IT C M 0 S STATIC RAM MODULE DESCRIPTION The M H 12908T N A is a 1048576-bits CMOS static RAM module organized as 131072-words by 8-bits. It consists of four industry standard 32K x 8 static RAMs and one

Contextual Info: MITSUBISHI LSIs MH1M08TNA-85L,-10L,-12L,-15L/ MH1M08TNA-85H,-10H,-12H,-15H 8 3 8 8 6 0 8 -B IT 1 0 4 8 5 76-W ORD BY 8 -B IT C M 0 S STATIC RAM DESCRIPTION PIN C O N FIG U R A TIO N (TOP VIEW ) The M H 1 M 0 8 T N A is a 8 3 8 8 6 0 8 bits C M O S static RA M

Contextual Info: MITSUBISHI LSIs M5M44258BP, J,L-7, -8,-10 STATIC COLUMN MODE 1 0 4 8 5 7 6 - B IT 2 6 2 144-W ORD BY 4-BIT DYNAM IC RAM DESCRIPTION This is a fa m ily o f 2 6 2 1 4 4 -w o r d b y 4 - b it d y n a m ic R A M s, PIN C O N F IG U R A T IO N (TOP V IE W ) fa b ric a te d w ith th e high p e rfo rm a n c e C M O S process, and

Contextual Info: MITSUBISHI LSIs M 5 M 4 4 2 5 6 B P ,J ,L , VP, R V -7 ,-8 ,-1 0 FAST PAGE MODE 1 0 4 8 5 7 6 -B IT 2 6 2 1 4 4 -W 0 R D BY 4-BIT DYNA M IC RAM D E SC R IP T IO N This is a fa m ily o f 262144-w ord by 4 -b it dynam ic RAMs, fabricated w ith the high performance CMOS process, and

RT-6

Contextual Info: MITSUBISHI LS Is M5M4V4280J,TP,RT-6,-7,-8,-6S,-7S,-8S PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is

Contextual Info: t>a 4 ^ 0 2=] 0017 2 fl^ T b S • MITSUBISHI RF POWER MODULE M57792 806-870MHZ, 13.5V, 20W, FM MOBILE RADIO BLOCK DIAGRAM PIN : © Pin @ V CC 1 VCC 2 ©VCC3 ® PO DGND © : RF INPUT : 1st. DC S U PPLY : 2nd. DC SU PPLY : 3rd. DC SU PPLY : RF OUTPUT

Contextual Info: MITSUBISHI LSIs MH51208SN-70L, -85L,-lOL,-12L,-15L/ MH51208SN-70H,-85H,-10H,-12H,-15H 4 194304-BIT 5 2 4 2 8 8 -WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The MH51208SN is a 4194304 bits CMOS static RAM module organized as 524288-words by 8-bits. It consists