1C SMD TRANSISTOR Search Results

SMD Transistor 1c

Contextual Info: Part Number System x X SMD Ser lo«_ 2 = mlnIPack 1C 3 = mlniPack Component 4 = mlnIBag Passive 5 = mlniBag Discrete 6 = miniReel Passive 7 = miniReel Discrete 8 = miniReel 1C 9 = Other X Passives X X X Capacitor / Resistor 0 = Ceramic Capacitor 1 • 1% Resistor

transistor bc 855

Abstract: pth posistor pth9c32 Murata PTH pth9c32ar471 ultrasonic sensor qt pth9c32ar471q-t
Contextual Info: POSiSTOR POSISTOR' i a * * a and PTH are trademarks of Murata Manufacturing Co. Ltd. Chip PTC Thermistor POSISTOR for Temperature Sensor PTH9C32 Series Most Suitable for the Thermal Protection of Hybrid 1C Circuits Chip PTC Thermistor, PTH9C32 series, is a SMD

Contextual Info: SIEM ENS FM-Tuner 1C TUA 1574-X6 Preliminary Data Bipolar IC Features • • •. • • Double-balanced mixer AGC generation Strictly symmetrical RF parts Decoupled counter outputs IF-driver Type Ordering Code Package TUA 1574-X6 Q67000-A5009 P-DSO-16 SMD

Contextual Info: SIEMENS Video and Sound IF with FM-PLL Demodulator, AFC and V & S SCART TDA 5950X Bipolar 1C Features • Features video and sound IF • Video and sound SCART • AFC • NTSC option Type Ordering Code Package TDA 5950X Q67000-A5112 P-DSO-24-1 SMD TDA 5950X

CDFP3-F20

Abstract: HS9-4080ARH-8 8 pin AHB HS9-4080ARH 5962F9961701QSC 5962F9961701VSC HS-4080ARH HS9-4080ARH-Q hs4080
Contextual Info: HS-4080ARH interrii F e b u a ry . Data Sheet mi File Number 4563.3 Features Radiation Hardened Full Bridge N-Channel FET Driver • Electrically Screened to SMD # 5962-99617 The HS-4080ARH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver 1C. The device

Contextual Info: Programmable Digital Timer •SAB 0529 Bipolar 1C Type ■ SAB 0529 ■ SAB 0529 G Ordering Code Package Q 67000-H 2176 P-DIP-18 Q67000-H2952 P-DSO-2Q SMD With the digital tim er SAB 0529, delay times between 1 second and 31 1/2 hours can be set. Time base is the 50 Hz line frequency. A triac may be triggered by the SAB 0529 IC.

PMBT3903

Abstract: transistor SMD t08 R35A MARKING CODE SMD IC transistor t08 smd PMBT3904 smd code marking ft sot23 IC SMD MARKING CODE ti 3c
Contextual Info: N AMER PH I L I P S / D I S C R E T E ObE D ^53^31 QDlhlDS 0 ! PMBT39Ö3 PMBT3904 r - 3 S - SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment.

mk06u

Abstract: dil reedrelais KEMA 03 ATEX 2042U relais bistabil smd M21 RM05-4-BV10500 mk08 OPTOKOPPLER PTB 06 ATEX 2042U smd 1C
Contextual Info: PRODUKTÜBERSICHT Reed Relais • Reed Sensoren · Reed Schalter www.meder.com AUSWAHLHILFE MEDER electronic Auswahlhilfe Im folgenden Abschnitt stellen wir unsere Standard-Reedprodukte und ihre Spezifikationen in Übersichtsform dar. Diese Produkte repräsentieren nur einen kleinen Teil des

5v dc to 220v ac inverter

Abstract: Panasonic elevator door controller 12V DC to 230V AC inverters circuit diagram panasonic - elevator door controller manual high frequency welder circuit diagram 12v dc 240v ac inverter inverter DC 12v to AC 220v 24v dc to 230v ac single inverter Panasonic elevator door controller Elevator Door 220v to 12v inverters circuit diagrams
Contextual Info: Short Form Relays 09/2007 Telecommunications, machine construction, measurement and control systems, automotive electronics, building security and installation – today there is virtually no branch of human activity that can exist without using modern relays. Panasonic Electric Works is able

68w Transistor smd

Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Contextual Info: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W

smd 1C

Contextual Info: Transistors IC SMD Type Complementary PowerTrench Half-Bridge MOSFET KDS4501H Features N-Channel 9.3 A, 30 V RDS ON = 18m RDS(ON) = 23m @ VGS = 10 V @ VGS =4.5V P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V Absolute Maximum Ratings Ta = 25

transistor smd 6a

Abstract: smd 1C 2945A m 830 smd Transistor Mosfet N-Ch 30V
Contextual Info: Transistors IC SMD Type 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6 A, 30 V RDS ON = 28m @ VGS = 10V RDS(ON) = 35m @ VGS =4.5V P-Channel -6 A, -30 V RDS(ON) = 32m @ VGS =- 10 V RDS(ON) = 45m @ VGS =-4.5V Absolute Maximum Ratings Ta = 25

smd 1C

Abstract: 1c smd transistor 1b smd transistor SMD Transistor nc KDS8928A SMD Transistor 1c 1130 pch Dual N & P-Channel MOSFET
Contextual Info: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS ON = 0.030 RDS(ON) = 0.038 @ VGS = 4.5V @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V

ch 306

Abstract: smd 1C kds8958 1b smd transistor 78 DIODE SMD smd transistor 26
Contextual Info: Transistors IC SMD Type Dual N & P-Channel PowerTrench MOSFET KDS8958 Features N-Channel 7.0 A, 30 V RDS ON = 0.028 RDS(ON) = 0.040 @ VGS = 10 V @ VGS =4.5V P-Channel -5 A, -30 V RDS(ON) = 0.052 RDS(ON) = 0.080 @ VGS =- 10 V @ VGS =-4.5V Fast switching speed

LA 5530

Abstract: 5962-9085401HPX "SMD Code" h8 la 5531 HCPL-6531 sc 6531 D
Contextual Info: Whp%H E W L E T T mütim P A C K A R D HCPL-5500 HCPL-5501 883B 5962-9085401HPX HCPL-5530 HC PL-5531 (883B) 5962-8767902PX (8-pin Dual In-Line Package) HCPL-6530 HCPL-6531 (883B) 5962-87679032A (20 Terminal Leadless Chip Carrier) Transistor Output, Hermetically Sealed

78 DIODE SMD

Abstract: smd transistor 26
Contextual Info: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS ON = 80m RDS(ON) = 130m @ VGS = 10 V @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m @ VGS =- 10 V @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON).

kds9

Abstract: TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET
Contextual Info: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS ON =0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used

smd transistor P2D

Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
Contextual Info: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.

Contextual Info: > N AMER PHILIPS/DISCRETE QbE D • bbS3T31 □QlblDS □ ■ _ / L PMBT3903 PMBT3904 r - 3 £ T - SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended fo r use in telephony and professional communication equipment.

PZTA42

Abstract: PZTA43
Contextual Info: •i bbsa^ai a o E b a m ^s t « a p x N AMER PHILIPS/DISCRETE PZTA42 PZTA43 b7E D SILICON EPITAXIAL TRANSISTORS NPN transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.

smd 1C

Abstract: marking 1c MMBTA20
Contextual Info: Transistors IC SMD Type General Purpose Amplifier MMBTA20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 General Purpose Amplifier. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

marking 1c

Abstract: smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor KC847S
Contextual Info: Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Contextual Info: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from