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    1BW 85 Search Results

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    1BW 85 Price and Stock

    Honeywell Sensing and Control BFL1-BW4

    Limit Switches SW 1NC 1NO SPDT 11A Wobble-SPR Wire ACTR
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    Mouser Electronics BFL1-BW4 6
    • 1 $104.31
    • 10 $90.34
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    Honeywell Sensing and Control BFL1-BW1

    Limit Switches Limit Switch BF Enclosures
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFL1-BW1
    • 1 $90.8
    • 10 $86.03
    • 100 $81.87
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    • 10000 $81.87
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    1BW 85 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 1 - 1BW AC-DC Single Output Interchangeable Wall-mounted type GE18 senes I F é a l u re £ : b i l n d i B i i g e d i l e r i C s l . ç f î i s l . ç U æ i l ¿ a c - a r a ta y l U intì'sa AC i nfLl i K j I ra-ig* Nù M d cc/n^-'ociei.netoitC’jaw


    OCR Scan
    -43-Y 16WAC-DC PDF

    Untitled

    Abstract: No abstract text available
    Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet


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    L9279-14 SE-171 KLED1042E04 PDF

    transistor 1BW

    Abstract: SE-171 1bw 85 S8265
    Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use


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    S8265 SE-171 KSPD1041E01 transistor 1BW 1bw 85 S8265 PDF

    S8265

    Abstract: SE-171
    Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm Applications l Light dimmer in locations at high humidity or for outdoor use


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    S8265 SE-171 KSPD1041E01 S8265 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use


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    S8265 SE-171 KSPD1041E01 PDF

    Untitled

    Abstract: No abstract text available
    Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet


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    L9279-14 SE-171 KLED1042E03 PDF

    L9279-14

    Abstract: SE-171
    Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet


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    L9279-14 25phone: SE-171 KLED1042E03 L9279-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)


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    G9285-14 850phone: SE-171 KGPD1010E03 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTOMULTIPLIER TUBE R375 160 nm to 850 nm Response Multialkali 51 mm (2 Inch) Diameter, 10-stage, Head-on Type GENERAL Parameter Spectral Response* Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure Dynode


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    10-stage, 15-pin E678-15C SE-171-41 TPMH1246E04 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)


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    G9285-14 SE-171 KGPD1010E04 PDF

    KAPDB0017EC

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S9717 series High reliability, surface-mount ceramic package S9717 series are Si APD avalanche photodiodes encapsulated in a surface-mount ceramic package that ensures high reliability in the same wide operating temperature range (-20 to +85 ˚C) as metal package devices. S9717 series also allows downsizing of equipment in various


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    S9717 S9717-02K/-05K: S9717-05L: SE-171 KSPD1014E02 KAPDB0017EC PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)


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    G9285-14 SE-171 KGPD1010E04 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S9717 series High reliability, surface-mount ceramic package S9717 series are Si APD avalanche photodiodes encapsulated in a surface-mount ceramic package that ensures high reliability in the same wide operating temperature range (-20 to +85 ˚C) as metal package devices. S9717 series also allows downsizing of equipment in various


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    S9717 S9717-02K/-05K: S9717-05L: SE-171 KAPD1014E02 PDF

    photodiode ber 10-9

    Abstract: sub preamp G9285-14 KGPD1010E02 SE-171
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)


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    G9285-14 SE-171 KGPD1010E02 photodiode ber 10-9 sub preamp G9285-14 KGPD1010E02 PDF

    p-i-n photodiode -21 dBm

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9286-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical l Gigabit Ethernet Sub-Assembly l Fiber channel l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.65 V/mW (-17 dBm)


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    G9286-14 SE-171 KGPD1011E05 p-i-n photodiode -21 dBm PDF

    E678-15B

    Abstract: uA 741 IC data sheet LM 1122 ic 741 equivalent 10-STAGE WELWYN DATASHEET OF IC 741 IC 741 photomultiplier DY10
    Text: PHOTOMULTIPLIER TUBE R375 160 to 850 nm Response Multialkali 51 mm (2 Inch) Diameter, 10-stage, Head-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area Window Material Structure Dynode


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    10-stage, 15-pin E678-15B SE-171-41 TPMH1246E03 E678-15B uA 741 IC data sheet LM 1122 ic 741 equivalent 10-STAGE WELWYN DATASHEET OF IC 741 IC 741 photomultiplier DY10 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9286-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical l Gigabit Ethernet Sub-Assembly l Fiber channel l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.65 V/mW (-17 dBm)


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    G9286-14 SE-171 KGPD1011E05 PDF

    sensitivity dB photodiode pin

    Abstract: sub preamp G9286-14 KGPD1011E03 SE-171
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9286-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical l Gigabit Ethernet Sub-Assembly l Fiber channel l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.65 V/mW (-17 dBm)


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    G9286-14 SE-171 KGPD1011E03 sensitivity dB photodiode pin sub preamp G9286-14 KGPD1011E03 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l SDH/SONET l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V


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    G9287-14 SE-171 KGPD1012E01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9735-14 Rosa type, 850 nm, 4.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 4.25 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -22 dBm Typ.


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    G9735-14 SE-171 KGPD1013E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9846-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.9 V/mW (at -20 dBm)


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    G9846-14 SE-171 KGPD1018E01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9845-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 1.6 V/mW (at -20 dBm)


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    G9845-14 SE-171 KGPD1017E01 PDF

    PIN photodiode 420 nm

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)


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    S3590-08/-09 S3590-08 S3590-09 SE-171 KPIN1052E06 PIN photodiode 420 nm PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)


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    S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E02 PDF