1AV Series
Abstract: 1AV11F honeywell sensor circuit diagram 1AV12F 1AV13F 1AV11F
Text: ISSUE 3 Installation Instructions for the 1AV Series 2 Vane Sensor PK 87573 WIRING DIAGRAMS WARNING PERSONAL INJURY • DO NOT USE these products as safety or emergency stop devices, or in any other application where failure of the product could result in personal injury.
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87573-3-EN
1AV Series
1AV11F honeywell
sensor circuit diagram
1AV12F
1AV13F
1AV11F
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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1AV Series
Abstract: 1AV11F 1AV chart 2 ISO 7637-1 MICRO SWITCH 1AV12F 1AV12F 1AV13F load dump pulse 1AV11F honeywell
Text: 1AV SERIES CHART 2 NOTES OVER SPECIFIED VOLTAGE AND MAXIMUM TEMPERATURE RANGE OF SPECIFIC LISTINGS MECHANICAL CHARACTERISTICS / T V A / A SWITCH IS OFF RELEASED CONDITION WHEN VANE ACTUATOR (TOOTH) IS IN GAP LEFT RIGHT DIFFERENTIAL /S\ ABSOLUTE MAXIMUM RATINGS ARE THE
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1AV3A
Abstract: No abstract text available
Text: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting
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74bbfl51
H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
1AV3A
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eh11a
Abstract: 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P 11AV2
Text: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line
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H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
H11AV3A
eh11a
1AV Series
H11AV1A
H11AV1
H11AV2
H11AV3
0730-2P
11AV2
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hall effect sensor tachometer
Abstract: MICRO SWITCH 1AV3A hall sensor magnet 4 terminals 1AV3A 1AV2A 3AV2C 1AV Series 3AV1C 4AV12A 4AV11C
Text: AV Van operated position sensors FEATURES TYPICAL DIMENSIONS . Hall effect sensor • Single digital output. . . current sinking or sourcing » Versatile mounting o 3 pin solder/quick-connect terminals or leadwires • 6 to 24 VDC power supply • Lower operating force
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4AV11C
V11C-T1
4AV12C
4AV11A
4AV12A
hall effect sensor tachometer
MICRO SWITCH 1AV3A
hall sensor magnet 4 terminals
1AV3A
1AV2A
3AV2C
1AV Series
3AV1C
4AV12A
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MICRO SWITCH 1AV3A
Abstract: 3AV2C 1AV Series 4av11c-T1 hall effect vane sensor 4AV11A-T1 hall sensor magnet 4 terminals 3AV1C 4AV11C 3AV1c HONEYWELL HALL EFFECT VANE SENSOR
Text: HONEYWELL INC/ AV MICRO nE MSS1ÖBQ DQ10ÛQD T d Van operated position sensors N- t s *i3> FEATURES TYPICAL DIMENSIONS . Hall effect sensor • S/ng/e digital output. . . current sinking or sourcing » Versatile mounting o 3 pin solder/quick-connect terminals or
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4AV11C
4AV12C
4AV11A
4AV12Â
V11C-T1
MICRO SWITCH 1AV3A
3AV2C
1AV Series
4av11c-T1
hall effect vane sensor
4AV11A-T1
hall sensor magnet 4 terminals
3AV1C
3AV1c HONEYWELL HALL EFFECT VANE SENSOR
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1AV Series
Abstract: No abstract text available
Text: FU JI 2SK2762-01L,S t ìiu M s ir t ó u t ì FAP-IIS Series > Features - N-channel MOS-FET 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2762-01L
1AV Series
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2SK2522-01MR
Abstract: No abstract text available
Text: F U JI S T D g Q E 2SK2522-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0 ,1 8 H 18A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof > Applications
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2SK2522-01MR
20KjQ)
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2SK2652-01
Abstract: 526A TA6A
Text: F U JI 2SK2652-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2 ,5 ß 6A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5 > Applications
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2SK2652-01
00D4b71
526A
TA6A
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EFL 233
Abstract: 2SK2757-01 n4570
Text: F U JI ölüMeulßäUG 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2757-01
O-220AB
EFL 233
n4570
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Untitled
Abstract: No abstract text available
Text: ¡a s H a r r i s S E M I C O N D U C T O R F m S L 1 1 U U D , } F m S L 1 1 U U R “ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2690-01 N-channel MOS-FET tìU ,s iE u itìu e FAP-IIIB Series 60V > Features - 0,0lß 80A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier
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2SK2690-01
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HTG 7000
Abstract: 609 200A DO-200AA R23A14B R23A16A R23A18A international rectifier 07221-D
Text: 4855452 INTERNATIONAL RECTIFIER IO R 73C 07218 Data Sneet No. PD-2.Î47 INTERNATIONAL RECTIFIER 73 D DE 1 4ÔSS4SS 0DD7E1Û 3 | R23A SERIES 1800-1200 VOLTS RANGE 635 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VRRM* VR ” M
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14fi554S2
000721fl
R23A18A
R23A16A
R23A14B
R23A1SB
Lias54SE
DO-200AA
HTG 7000
609 200A
international rectifier
07221-D
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H11AV1A harris
Abstract: H11AV2A
Text: HARRI S SEMI COND 37E SECTOR 43G2271 D D G2 7 1 b ô 2 I HAS optoelectronic speculations- T -H Î-S 3 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a A s In f ra re d E m ittin g D io d e & N P N S ilic o n P h o to - T ra n s is to r
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43G2271
H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
92CS-42662
92CS-429S1
H11AV1A harris
H11AV2A
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1AV3A
Abstract: H11AV1A H11AV1 H11AV2A H11AV2 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a
Text: G E SOLI» 01 STATE 3>E § 3 f l ? 5 0 ö l ODIITDb O ptoelectronic specifications . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a As Infrared Emitting D iode & N P N Silicon Photo-T ransistor T he G E Solid State 1AV series consists of a gallium arsenide, infrared
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H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
H11AV2
1AV3A
H11AV1A
H11AV1
H11AV3
H11AV3A
1av3
0730-2P
ic 5304 1a
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pj 939 diode
Abstract: diode PJ 41 MG pj 939 diode SS 12 pj 889 diode
Text: H A F R R I F S S L 1 3 A D , S E M I C O N D U C T O R F 1 3 A R Description Features 9A, 100V, Tds ON = 0-180i2 • Total Dose - Meets Pre-RAD Specifications to 1 00K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with
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1-800-4-HARRIS
pj 939 diode
diode PJ 41 MG
pj 939 diode SS 12
pj 889 diode
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Untitled
Abstract: No abstract text available
Text: MIVR 42051 mn NEGATIVE VOLTAGE REGULATORS Designed for use in general purpose applications ABSOLUTE MAXIMUM RATINGS FEATURES • • • Output current to 5 amps Output voltage to -34V Internal short circuit protection Ratings Symbol Value Unit ^OUT 5 A Power Dissipation
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22-PIN
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HALL 95A
Abstract: diode 60S05 95a hall ZD 103 ma 60S05 60S8
Text: 60S SER IES Micro/semi Corp. f The diode e xp e ns SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 941-6300 DESCRIPTION/FEATURES • ECONOMICAL 6 AMP Iq MOLDED DEVICE OFFERS CAPABILITY OF STUDMOUNTED RECTIFIERS • 400 AMPS SURGE PROVIDES HIGH
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60S05
60WARD
HALL 95A
diode 60S05
95a hall
ZD 103 ma
60S05
60S8
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Untitled
Abstract: No abstract text available
Text: H a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M • Single Event W rW • ■ Package Features • 24A, 200V, rDS ON = 0.110ft Total Dose ^ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 • M TO-254AA - Meets Pre-RAD Specifications to 100K RAD (Si)
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FSF250D,
FSF250R
O-254AA
36MeV/mg/cm2
110ft
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSJ160D,
FSJ160R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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75307
Abstract: kp-03 lambda LAS 14 AU 75307*p lambda* lis
Text: HUF75307P3, HUF75307D3, HUF75307D3S HARRIS S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 13A, 55V • Ultra Low On-Resistance, ro s O N = 0 .0 9 0 i2 • Diode Exhibits Both High Speed and Soft Recovery
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HUF75307P3,
HUF75307D3,
HUF75307D3S
TB334,
1-800-4-HARRIS
75307
kp-03
lambda LAS 14 AU
75307*p
lambda* lis
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75333p
Abstract: No abstract text available
Text: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S HARRIS S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 56A, 55V • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery
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HUF75333G3,
HUF75333P3,
HUF75333S3,
HUF75333S3S
TB334,
HUF75333
1-800-4-HARRIS
75333p
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Untitled
Abstract: No abstract text available
Text: fffj h a rris FSF150D, FSF150R S E M I C O N D U C T O R " W J " W • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs March 1995 Features Package • 25A N o te1 , 100V, rDS(ON) = 0.070Q TO-254AA • Total Dose Meets Pre-Rad Specifications to 10OkRAD(Si)
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FSF150D,
FSF150R
O-254AA
10OkRAD
36MeV/mg/cm2
for3E13
1-800-4-HARRIS
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